LQFP080-P-1414A
Abstract: MN101C28A MN101CP28DBF QFP084-P-1818E
Text: □ MN101C28A / 28C / 28D / 28F / 28L MN101C28A / 28C / 28D / 28F / 28L 1 Type 1 ROM x8-Bit 32 K / 48 K / 64 K / 96 K / 96 K (External memory can be expanded) 1 RAM (x8-Bit) 1 536/2 048 / 2 048 / 4 096 /10 240 (External memory can be expanded) 1 Minimum Instruction Execution Time
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MN101C28A
Serial77
MN101C28A/28C/28D
P30IRQ4
LQFP080-P-1414A
MN101C28A/
TQFP080-P-1212
QFP084-P-1818E
LQFP080-P-1414A
MN101CP28DBF
QFP084-P-1818E
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K 4096
Abstract: KMM5368103 KMM5368103B
Text: KM M 5 36 8003B K/B KG KM M 53681 03B K/B KG DRAM M ODULE K M M 5 3 6 8 0 0 3 B K/B K G & KM M 53681 0 3 B K / B K G with Fast P a g e M o d e 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS EDO, 4K/2K Refresh, 5V FE AT U RE S G E N E R A L DE SCRIPTION The Samsung KMM53680 1 03BK is a 8Mx36bits
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8003B
KMM53680
8Mx36bits
5368003B
cycles/64ms
5368103B
cycles/32ms
K 4096
KMM5368103
KMM5368103B
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Untitled
Abstract: No abstract text available
Text: DWG. NO. DO NOT EC SCALE SD-5367 I- D R A WI N G NO. DRW N: C H 'K s ? APPRs EC NO. DRW N: C H 'K s 3E APPRs »□ EC NO. DRW N; »□ C H 'K s nf APPRs EC NO. DRW N s C H 'K s APPR; RELEASED EC NO DRW N: C H 'K s APPR: . J20 04 -27 23 Y.WADÀ '0 4 / 0 2 / 2 7
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SD-5367
MXJ-54
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C5-K2.5L
Abstract: C5-K C5K2.5L C6-K3L
Text: MITSUMI Power Inductors C5-K, C6-K, C13-K Series Coils, Filters OUTLINE High efficiency low DCR choke coil for batterydriven portable electronic equipment power supplies (DC-DC compander, switching power supply) and other electronic equipment. C5-K C6-K
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C13-K
C13-K
C13-K4
C5-K2.5L
C5-K
C5K2.5L
C6-K3L
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Untitled
Abstract: No abstract text available
Text: KMM5368003CK/CKG KM M 53681 0 3 C K / C K G DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KM M 53681 0 3 C K / C K G R ev is io n H is to ry Ver si on 0.1 ( Nov., 19 97 ) : Changed the mode of parity check component from EDO to FP, refer to
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KMM5368003CK/CKG
8Mx36
KMM53680
8Mx36bits
300mil)
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Untitled
Abstract: No abstract text available
Text: 20}~0 :<,5363+;<9/ 36;/95/.3+;/ 87>/9 9/4+? 0C@MNKCL S :A jn`kZ_`e^ ZXgXY`c`kp S 65bT `dglcj\ n`k_jkXe[ mfckX^\ .Y\kn\\e Zf`c Xe[ ZfekXZkj/ S K\\kj TDE 5<551 5;86 i\`e]fiZ\ `ejlcXk`fe S H`^_cp \]]`Z`\ek dX^e\k`Z Z`iZl`k ]fi _`^_ j\ej`k`m`kp? 755dU S Eoki\d\cp jdXcc ]ffkgi`ek lk`c`q`e^ NCB Xi\X
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755dU
79TDC/
QeM71
V65555
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ez 637
Abstract: No abstract text available
Text: 20}~0 :<,5363+;<9/ 36;/95/.3+;/ 87>/9 9/4+? 0C@MNKCL S :A jn`kZ_`e^ ZXgXY`c`kp S 65bT `dglcj\ n`k_jkXe[ mfckX^\ .Y\kn\\e Zf`c Xe[ ZfekXZkj/ S K\\kj TDE 5<551 5;86 i\`e]fiZ\ `ejlcXk`fe S H`^_cp \]]`Z`\ek dX^e\k`Z Z`iZl`k ]fi _`^_ j\ej`k`m`kp? 755dU S Eoki\d\cp jdXcc ]ffkgi`ek lk`c`q`e^ NCB Xi\X
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755dU
79TDC/
QeM71
V65555
ez 637
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4562 mosfet
Abstract: circuit diagram of high power smps 12v 1 amps SC1485 6 volts SMPS Power supply SMPS CIRCUIT DIAGRAM for computers circuit SCHEMATIC DIAGRAM SMPS 12v 5A 2SC1485
Text: SC1485 Dual Synchronous Buck Power Supply Controller POWER MANAGEMENT Description PRELIMINARY Features K Constant on-time for fast dynamic response K Programmable VOUT range = 0.5 VCCA K VIN Range = 1.8V 25V K DC current sense using low-side RDS ON
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SC1485
TSSOP-28
4562 mosfet
circuit diagram of high power smps 12v 1 amps
SC1485
6 volts SMPS Power supply
SMPS CIRCUIT DIAGRAM for computers
circuit SCHEMATIC DIAGRAM SMPS 12v 5A
2SC1485
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proton rx 4000 watts power amplifier circuit diagram
Abstract: Hamamatsu r300 0812E H5783
Text: PHOTOMULTIPLIER TUBES Basics and Applications THIRD EDITION Edition 3a PHOTON IS OUR BUSINESS 2007 HAMAMATSU PHOTONICS K. K. ▲ Photomultiplier Tubes ▲ Photomultiplier Tube Modules © 2007 HAMAMATSU PHOTONICS K. K. Introduction Light detection technolgy is a powerful tool that provides deeper understanding of more sophisticated
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OTH9001E03a
proton rx 4000 watts power amplifier circuit diagram
Hamamatsu r300
0812E
H5783
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AD536A
Abstract: AD536AK
Text: - 468 - AD536A a R M S -D C 2 R M a l s - D c i ^ u x d c n æ & rn tj- r z , j-« * ï7 1 % a r t s s . í í : A D 5 3 6 A } ± RMS m i l K J t W L 7 t dB ft * 4 - t o T te K l, OdB C Ï Ï 1 / «fc I 0.1 7b> b 2 V rm«iO^H-C ff i» ;C Sa5ë-C -# i,. A D 536A ÍC Í4, flMEIC i; o "C— O O-J^U — K (J , S ¿ K ) ^ * S . K ^ ' U —
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AD536A
AD536A}
AD536AÃ
071/X
t-5ICAD536A
AD536AK
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f7807
Abstract: High Current Voltage Regulator mosfet 7805 7807 voltage regulator 7805 12v to 5v 2a IRF7805 IRF7807 LP2951A SC1470 SC1470ITSTR 7807 regulator
Text: 5+ "% SYNCHRONOUS BUCK POWER SUPPLY CONTROLLER POWER MANAGEMENT Description Features KConstant On-Time for Fast Dynamic Response KProgrammable VOUT Range = 0.5 VCCA KVIN Range = 1.8V 25V KDC Current Sense Using Low-Side RDS ON Sensing or RSENSE in Source of Low-Side
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SC1470
10uF/6
10uF/25V
150uF
1000pF
ZHCS400
MBRS140
IRF7807
IRF7805
ET03MD1ABE
f7807
High Current Voltage Regulator mosfet 7805
7807 voltage regulator
7805 12v to 5v 2a
IRF7805
IRF7807
LP2951A
SC1470ITSTR
7807 regulator
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Untitled
Abstract: No abstract text available
Text: 5370~5370}? .@?;9;?6A2 =28.C 3HERSPHQ Y Rn[fbgbZmnk^ Znmhfhmbo^ k^eZr Y Sa^ p^b`am bl hger 9` _hk lbg`e^ k^eZr Y Eqm^g]^] m^fi3 kZg`^ ni mh 65: Y Sa^ k^_ehp lhe]^kbg` o^klbhg .hi^g o^gm ahe^/ ?VOJFEK .OOKJFERJNMQ ZoZbeZ[e^ .HFJC2S/ C^gmkZe ]hhk eh\d1 Agmb2ma^_m eh\d1 Ohp^k ]hhkl - pbg]hpl1
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IN5341
Abstract: DL330M sl 1352 DL-330M SL2129 DL430M LB203DB 2190 ic for lg tv LN533RAMR LN533RKMRS
Text: -85- « £ + U £ it tfc £ a LN 53 3 RA M R LN533RKM R LN 53 6 RA M R LN 536RKM R LN 5330AM 0 LN5330KM 0 & r IJN O M K A .V 'IK ÎI LN 5341RAZ2 LN 53 4 1R K Z2 - D L-330M - D L-430M m — ¥ W 0<j ft 14 T 0 = 25’C i -k 'Hl&ülL ¡rlí'-L M t ¡£ Xp
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LN533RAMR
LN533RKMR
LN536RAMR
LN536RKMR
LN5330AM0
LN5330KM0
X533RAMRS
LN533RKMRS
P2X14-2BÂ
MD0657M-R)
IN5341
DL330M
sl 1352
DL-330M
SL2129
DL430M
LB203DB
2190 ic for lg tv
LN533RKMRS
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Untitled
Abstract: No abstract text available
Text: KMM5368005CK/CKG KMM5368105CK/CKG DRAM M ODULE KM M 5 3 6 8 0 0 5CK / CKG & K M M 53681 0 5 C K / C K G Fast P a g e M o d e with E D O M o d e 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V F E A TU R ES G E N E R A L DESCRIPTION The Samsung KMM53680 1 05CK is a 8Mx36bits
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KMM5368005CK/CKG
KMM5368105CK/CKG
KMM53680
8Mx36bits
5368005C
cycles/64ms
5368105C
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ez 637
Abstract: U539 TAC47 B855 65BT NK 637 KFC 1/2H
Text: 20}~0 :<,5363+;<9/ 36;/95/.3+;/ 87>/9 9/4+? 0C@MNKCL S :A jn`kZ_`e^ ZXgXY`c`kp S 65bT `dglcj\ n`k_jkXe[ mfckX^\ .Y\kn\\e Zf`c Xe[ ZfekXZkj/ S Rpg\ 7 d\\kj TDE 5<551 5;86 i\`e]fiZ\ `ejlcXk`fe S H`^_cp \]]`Z`\ek dX^e\k`Z Z`iZl`k ]fi _`^_ j\ej`k`m`kp? 755dU S Eoki\d\cp jdXcc ]ffkgi`ek lk`c`q`e^ NCB Xi\X
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755dU
85TDC
V65555
ez 637
U539
TAC47
B855
65BT
NK 637
KFC 1/2H
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Untitled
Abstract: No abstract text available
Text: KMM536512B DRAM MODULES 5 1 2 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 3 6 5 1 2 B is a 5 1 2K bit X 3 6 Dynamic RAM high density memory module. The Sam sung K M M 5 3 6 5 1 2 B consist of sixteen CMOS 2 5 6 K X 4
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KMM536512B
20-pin
18-pin
72-pin
130ns
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Philips FI1256 MK2 TV Tuner
Abstract: fi1256 philips tv tuner 3139 147 mk2 resistor fi1256 mk2 tag 8713 fi1256mk2 tuner 3139 147 13741 Philips 3139 147 tv tuner 3139 147
Text: BU TUNERS DATA SHEET FI1256 MK2 Desktop video tuner system CCIR D/K Preliminary specification File under BU Tuners, DC03 1996 Jul 26 Philips Components Preliminary specification Desktop video tuner system CCIR D/K FI1256 MK2 FEATURES • System CCIR D/K • True 5 V device low power dissipation
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FI1256
TYPE920
COD06
Philips FI1256 MK2 TV Tuner
philips tv tuner 3139 147
mk2 resistor
fi1256 mk2
tag 8713
fi1256mk2
tuner 3139 147 13741
Philips 3139 147
tv tuner 3139 147
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IRF p 536 MOSFET
Abstract: No abstract text available
Text: SC1486 Dual Synchronous DDR Buck Power Supply Controller POWER MANAGEMENT Description PRELIMINARY Features K Constant on-time for fast dynamic response K VIN range = 1.8V 25V K DC current sense using low-side RDS ON sensing The SC1486 is a dual output constant on synchronousbuck PWM controller optimized for cost effective mobile
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SC1486
SC1486
TSSOP-28
TSSOP-28
IRF p 536 MOSFET
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UPA64H
Abstract: PA64H IRZ 46 T108 diode 476 k upa64 8 pin ic 3773
Text: NEC m =t=fi\rx Aa Di ode Ar r ay //PA64H i t K 7 K Silicon Epitaxial Diode A rray High Speed Switching aîPA64Hi±, 7 / - SIP ' r - ' J > ) •> K * i i ü ï ü X 'f f l ^ H / P A C K A G E D IM E N S IO N S tc, (U nit : mm) (em?) -y V t„ ¡^ S / F E A T U R E S
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uPA64H
PA64Hi±
UPA64H
PA64H
IRZ 46
T108
diode 476 k
upa64
8 pin ic 3773
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SJ 65a
Abstract: No abstract text available
Text: 31~*1z2 ;=-6474,<=:0 47<0:60/4,<0 98?0: :05,@ 1DANOLDM T 65A jn`kZ_`e^ ZXgXY`c`kp T 65bT `dglcj\ n`k_jkXe[ mfckX^\ .Y\kn\\e Zf`c Xe[ ZfekXZkj/ T K\\kj TDE 5<551 5;86 i\`e]fiZ\ `ejlcXk`fe T H`^_cp \]]`Z`\ek dX^e\k`Z Z`iZl`k ]fi _`^_ j\ej`k`m`kp? 755dU T Eoki\d\cp jdXcc ]ffkgi`ek lk`c`q`e^ NCB Xi\X
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755dU
V65555
SJ 65a
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Untitled
Abstract: No abstract text available
Text: KMM5364003CK/CKG KMM5364103CK/CKG DRAM MODULE KMM5364003CK/CKG & KMM5364103CK/CKG with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 53640 1 03 C K is a 4 M x3 6 b its RAM
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KMM5364003CK/CKG
KMM5364103CK/CKG
KMM5364003CK/CKG
KMM5364103CK/CKG
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LM 2536
Abstract: No abstract text available
Text: ;9=E/>0;9=E/>E 4FEA?AE<G8 C8>4I 9MJWXUMV , , , , , , MZq3 \hgmbghnl \nkk^gm :5B MZq3 fZdbg` \nkk^gm 755B Fqm^g]^] m^fi3 kZg`^ ni mh 67: Wbma ab`aer ^lmZ[ebla^] k^ebZ[bebmr Smkhg` k^lblmZg\^ Z[bebmr mh lah\d - ob[kZmbhg Nh \aZg`^ h_ lpbm\abg` lmZm^ o^klbhg Zm [k^Zd]hpg
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855fV
LM 2536
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mz 1532
Abstract: MSM511001A-70 FZJ 165 511001A
Text: 4bE D w • b?24S4ü O K I □ □□ 'IS n SEMICONDUCTOR O K I semiconductor MSM511001A 1,048,576-WORD b'H «O K IJ GROUP T - V é 'Z S W 1-BITS DYNAMIC RAM x GENERAL DESCRIPTION The MSM511001A is a new generation dynamic RAM organized as 1,048,576 woids by 1 bit. The
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2424G
MSM511001A
576-WORD
MSM511001A-70
140ns
468mW
MSM511001A-8A/80
160ns
mz 1532
FZJ 165
511001A
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SC2335
Abstract: SE 130 13007k SC5024 SC5030 E13008 sc536 5027 to-220 se to220 KSC5027
Text: TRANSISTORS FUNCTION GUIDE 2.3. Switching Transistors 2.3.1 TO-126, TO-220 & T 0 -3 P Type Tran sistors Condition vCE Ic A (V) (A) M IN 4 K SE 130 04 5 2 8 K SE 130 06 5 12 K S E 13008 375 0.5 400 0.5 300 450 500 800 ic Condition hFE Device (NPN) VcEO (V)
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O-126,
O-220
O-220F
-220F
SC2335
SE 130
13007k
SC5024
SC5030
E13008
sc536
5027 to-220
se to220
KSC5027
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