K 4145 TRANSISTOR Search Results

Contextual Info: SAMSUNG E L E C T R O N I C S MJD44H11 42E INC 7^4145 D 000=1013 T S S Î 1 G K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE POWER AND SWITCHINGSUCH AS OUTPUT OR DRIVER STAGES IN APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • L e a d F o rm e d fo r S u rfa c e M o u n t A p p lic a tio n s N o S u ffix

sc 4145

Abstract: ic sc 4145 k 4145 fzl 181 threshold switch Q67000-H8437 FZL4145D fzl 125
Contextual Info: FZL 4145 D Quad Driver Incl. Short-Circuit Signaling Bipolar IC Features ● ● ● Short-circuit shutdown with clock generator Four driver circuits for controlling power transistors Overload and short-circuit signaling P-DIP-18-1 Type Ordering Code Package

siemens fzl 125

Abstract: sc 4145 siemens lsl ic sc 4145 FZL+111
Contextual Info: SIEMENS Quad Driver Incl. Short-Circuit Signaling FZL 4145 D Bipolar IC Features • Short-circuit shutdown with clock generator • Four driver circuits for controlling power transistors • Overload and short-circuit signaling Type Ordering Code Package

Contextual Info: SIEMENS Quad Driver Incl. Short-Circuit Signaling FZL 4145 D Bipolar IC Features • Short-circuit shutdown with clock generator • Four driver circuits for controlling power transistors • Overload and short-circuit signaling Type □ FZL 4145 D Ordering Code

k 4145

Abstract: fzl4145 FZL4 siemens lsl
Contextual Info: SIEMENS Quad Driver Incl. Short-C ircuit Signaling FZL 4145 D Features • Short-circuit shutdown with clock generator • Four driver circuits for controlling power transistors • Overload and short-circuit signaling Type □ FZL 4145 D Ordering Code Package

ic sc 4145

Abstract: sc 4145 FZL 4146 FZL 4146 G IEC wiring schematic with overload SMD code V12 SMD transistor package code V12 FZL4145D automatic changeover current limiter FZL 4146 G datasheet
Contextual Info: FZL 4145 D Quad Driver Incl. Short-Circuit Signaling Bipolar IC Features ● ● ● Short-circuit shutdown with clock generator Four driver circuits for controlling power transistors Overload and short-circuit signaling P-DIP-18-1 Type Ordering Code Package

Contextual Info: SAMSUNG S EM I C ON D UC T OR IN C BCW33 14E D j 0007207 | NPN EPITAXIAL SILICON TRANSISTOR T liL N tK A L 2 rU n rU o C - ^ - l‘ 1 r l A I N o l d 1U H SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Sym bol C h a ra cte ristic ; Collector-Base Voltage ' Collector-Emitter Voltage

Contextual Info: [SAMSUNG SEM IC ON DU CT OR INC MPS3705 14E D 17^4145 0QQ731fc, 7 | NPN EPITAXIAL SILICON TRANSISTOR G E N E R A L P U R P O S E TRAN SISTO R • Collector-Emitter Voltage: Vceo=30V • C o lle cto r D issipation: Pc max =625mW A B S O L U T E MAXIMUM RATINGS (Ta=25°C)

Contextual Info: SAMSUNG S EMICONDUCTOR IN C ' BCW69 D Q 0D 75 1b 3 | PNP EPITAXIAL SILICON TRANSISTOR c r -g r i? GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic . Collector-Emitfer Voltage Emitter-Base Voltage : Collector Current I C ollector Dissipation

Contextual Info: S AM SU N G SEMICONDUCTOR INC BCW32 1ME D 7^4145 000?a0b | NPN EPITAXIAL SILICON TRANSISTOR .T-23- I e! GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: SAMSUNG SEMICONDUCTOR I NC MPS3702 14E D | 7^4145 0007312 T | PNP EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 AMPLIFIER TRANSISTOR !- • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: Pc max =625mW '- TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: S A M S U N G SEMICONDUCTOR INC MPSA 06 IME D 7 ^ * 4 1 4 2 QDG73MS 3 | NPN EPITAXIAL SILICON TRANSISTOR ' ' T-29^21 AMPLIFIER TRANSISTOR • Collector-Hmltter Voltage: V c e o = 8 0 V • Collector Dissipation: Pc (max =625mW A B S O L U T E MAXIMUM RATINGS (Ta=25°C)

Darlington transistor T7 27

Abstract: Samsung s3 mpsa25 p 605 transistor equivalent R/Detector/"detect18 ic"/"CD"/TB 2929 Ho
Contextual Info: SAMSUNG SEMICONDUCTOR INC MPSA25 14E O Jj TTbMlMt? 0007355 O | NPN EPITAXIAL - T ^ SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR • Collector-Emltter Voltage: Vc*»=40V • Collector Dissipation: Pc max =625mW A B SO LU TE MAXIMUM RATINGS (T,=25°C)

KSC2333

Abstract: NPN Transistor TO220 vcc 150V transistor 400v 3a 40w 180MH KSA940 KSC2073 KSC2233 KSC2335 samsung tv YS 150 003 b
Contextual Info: SAMSUNG SEM ICONDUCTOR INC KSC2Ö73 l^ E D | GOOTSMb 2 NPN EPITAXIAL SILICON TRANSISTOR r - 3 3 - o q TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSA940 • Collector-Base Voltage Vcso=150V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic ; I

MMBT4123

Abstract: transistor sot-23 marking L8
Contextual Info: SAM S UN G SEM ICO NDUCTOR INC MMBT4123 1ME 0 | ^4145 00072t*S 5 | NPN EPITAXIAL SILICON TRANSISTOR T-aq-tì GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Co#ector-Base Voltage Collector-Emitter Voltage

Contextual Info: BCX71J PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage VcBO -4 5 V Collector-Emitter Voltage V ceo -4 5 V Emitter-Base Voltage V ebo Collector Current

MARKING BL

Abstract: fS 4142 transistor 513 MMBC1622D6
Contextual Info: SAMSUNG S EMICONDUCTOR INC MMBC1622D6 14E D ^7Tt.4145 0007542 4 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Cotector-Emitter Voltage Emitter-Base Voltage Collector Current

2929 transistor

Abstract: MPSA25 mpsa82 MPSA26 MPSA45 MPSA55 MPSA62 MPSA63 I0204 625MW
Contextual Info: SAMSUNG SEMICONDUCTOR INC MPSA26 14E O 00073SM I NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic

siemens fzl 4141

Abstract: fzl 41450 fzl*4141 fzl4141d fzl4141 siemens lsl fzl4145 ts 4141 pin diagram of ic 4141 41450
Contextual Info: FZL4141 D FZL 4145 D The switching threshold at inputs Dl and EN A can be adjusted between 1.5 V and 7 V via connection TS: yTS = 0 V; VTS = 0 to 5 V; Ws = vs- input threshold = 1.5 V for 5 V logic input threshold = yTS +1.5 V inP ut threshold = 7 V (for 12/15 V and 24/28 V logic)

KST2222

Abstract: transistor marking 551
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST2222 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

T1P126

Abstract: transistor g35 B250H TIPI20 transistor darlington TIP-120 TIP120 TIP125 TB-127 tip120 pnp
Contextual Info: 1 4E D SAMSUNG SEMICONDUCTOR INC I 7^4145 0007734 J 3 NPN CKII AXIAL SILICO I DARLINGTON TRANSISTOR TIP120 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125 AB SO LU T E M A X IM U M RATINGS Ta=25°C Characteristic Collector-Base Voltage

KSR1010

Abstract: KSR2010
Contextual Info: ¡SAMSUNG SEMICONDUCTOR E O INC I 7Tfci414S 0 00 71 05 5 | KSR2010 PNP EPITAXIAL SILICON TRANSISTOR - :-— r - 3 * l - 13 SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit

000L SOT23

Abstract: KSA1182 marking 000L KSA2859
Contextual Info: SAMSUNG SEMICONDUCTOR ^NC KSA1182 14E D | 7^4145 0001,033 0 | T-i?-/ 9 PN.P EPITAXIAL SILICO N TRANSISTOR LOW FREQUENCY POWER AMPLIFIER SO T-23 * Complement to KSA2859 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage

MMBC1623L3

Contextual Info: r 7 .SAMSUNG SEMICONDUCTOR INC MMBC1623L3 m e o §7^ 14 2 0007 am, i | NPN EPITAXIAL SILICON TRANSISTOR — :-T-aa- AMPLIFIER TRANSISTOR - SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage