K 3264 TRANSISTOR Search Results

Contextual Info: SL6601C IS FOR MAINTENANCE PURPOSES ONL Y AND IS NOT RECOMMENDED FOR NEW DESIGNS GEC PLESSEY S E M I C O IN L> U C I O K N DS 3264 -1 SL6601C FM IF, PLL DETECTOR DOUBLE CONVERSION AND RF MIXER The SL6601 is a straight through or single conversion IF amplitier and detector for FM radio applications. Its minimal

K 3264 transistor

Contextual Info: SANKEN ELECTRIC CO LTD SSE » • 7TTD741 DDOCHSG 40S « S A K J ——^ Silicon NPN Triple Diffused Planar 2SC3264 Ö 'L A P T ☆Complement to type 2SA1295 Application Example : • Outline Drawing 3 . . MT-200 Audio and General Purpose Electrical Characteristics

K 3264 transistor

Abstract: BD 266 S K 3264 transistor technical data transistor Bd 575 TRANSISTOR BD 168 10 watt power transistor bd BD 266 A transistor BD 139 K1461 BD 140 transistor
Contextual Info: MOTOROLA SC 12E D § b3b7554 0aôM7Q1 Q | XSTRS/R F T-^-Oß MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC M ED IU M POWER SILICON NPN TRANSISTOR 1.5 AMPERE POWER TRANSISTOR . . . designed fo r use as audio amplifiers and drivers utilizing com plem entary o r quasi com plementary circuits.

K 3264 fe

Abstract: FZT853 NPN BH RE
Contextual Info: FZT851 FZT853 SOT223 NPN SILICON PLANAR HIGH CURRENT {HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995 - FEATURES * E x tre m e ly lo w e q u iv a le n t o n -re sista n ce; * 6 A m p s c o n tin u o u s c u rre n t, up to 20 A m p s peak c u rre n t

K 3264 fet transistor

Abstract: K 3264 fet K 3264 transistor BUK7508-55A BUK7608-55A
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which

K 3264 transistor

Abstract: K 3264 transistor technical data transistor 600 volts.50 amperes MR3A 221A-06 BUH50 BUH51 MPF930 1000 watt transistor 12 volt 100 amperes rj25
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH50 Designer’s Data Sheet SW ITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS The BUH50 has an application specific state-of-art die designed for use in 50 Watts HALOGEN electronic transformers and switchmode applications.

BUL 128 A

Abstract: RCA1A18 2n3053A complementary 40317 2N3053A
Contextual Info: • w, ■fft ■ ■ ■ . -.X ■ ■ V• - Power Transistors High-Speed-Switching n-p-n and p-n-p Type Selection Charts I CBO —juA Temp.—°C hF E * * at V C E = 10 V V CEO sus V CER (sus) V CEV (sus) v Current—mA V V 0.01 10 0.1 2N2102 FAMILY (n-p-n) General Purpose,

c1g smd

Abstract: bpv10nf TEMD2100
Contextual Info: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -

RCA1A18

Abstract: 40314
Contextual Info: • w, ■ fft ■ . -.X ■ ■ ■ ■ V • - Power Transistors High-Speed-Switching n-p-n and p-n-p Type Selection Charts I CBO —juA Temp.—°C hF E * * at V C E = 10 V V CEO sus V CER (sus) V CEV (sus) v Current—mA V V 0.01 10 0.1 2N2102 FAMILY (n-p-n) General Purpose,

K 3677

Contextual Info: BSR18A BSR18A C E SOT-23 B Mark: T92 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

K 2645 schematic circuit

Abstract: transistor d 2645 K 2645 transistor TRANSISTOR K 2645 transistor
Contextual Info: 33 HA-2640, HA-2645 November 1996 4MHz, High Supply Voltage Operational Amplifiers Features Description • Output Voltage S w in g . ±35V H A -2640 and H A -2 64 5 are m on olithic op era tiona l am plifiers w h ich are d e sig ned to d e live r un p re ce d e n te d d yn am ic

K 3264 fet transistor

Abstract: BUK7608-55A 03NH45 BUK7508-55A VA140
Contextual Info: BUK7508-55A; BUK7608-55A TrenchMOS standard level FET Rev. 02 — 17 January 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

IRFF210

Abstract: IRFF211 IRFF212 IRFF213
Contextual Info: Standard Power MOSFETs- IRFF210, IRFF211, IRFF212, IRFF213 File N um b er N-Channel Enhancement-Mode Power Field-Effect Transistors 1.8A and 2.2A, 150V - 200V rosioni = 1.50 and 2.40 N-C H A N N EL EN HANCEM ENT MODE Features: •

Contextual Info: Semiconductor, Inc. T C 9 11A T C 911B AUTO-ZEROED MONOLITHIC OPERATIONAL AMPLIFIERS FEATURES GENERAL DESCRIPTION • The TC911 CMOS auto-zeroed operational amplifier is the first complete monolithic chopper-stabilized amplifier. Chopper operational amplifiers like the ICL7650/7652 and

A8931SEA

Abstract: EP-039
Contextual Info: VOICE CO IL M O TO R D RIVER Providing control and drive of the voice coil motor used for head positioning in disk drive applications, the A8931 SEA is a full-bridge driver which can be configured so that its output current is a direct function of an externally applied control voltage or current. This linear

op07 oscillator

Abstract: 911a
Contextual Info: Semiconductor, Inc. TC911A TC911B AUTO-ZEROED MONOLITHIC OPERATIONAL AMPLIFIERS FEATURES GENERAL DESCRIPTION • The TC911 CMOS auto-zeroed operational amplifier is the first complete monolithic chopper-stabilized amplifier. Chopper operational amplifiers like the ICL7650/7652 and

ICL7650 application notes

Abstract: K 3264 transistor MONOLITHIC AMPLIFIERS ICL7650 OP 741 OP05 op07 metal type datasheet op07 oscillator u 741 LTC1052
Contextual Info: 1 TC911A TC911B AUTO-ZEROED OPERATIONAL AMPLIFIERS 2 FEATURES GENERAL DESCRIPTION • The TC911 CMOS auto-zeroed operational amplifier is the first complete monolithic chopper-stabilized amplifier. Chopper operational amplifiers like the ICL7650/7652 and LTC1052 require user-supplied, external offset compensation storage capacitors. External capacitors are not required with the TC911. Just as easy to use as the conventional OP07 type amplifier, the TC911 significantly reduces

K3264

Abstract: SIEMENS saw filter G1968 K9350M G1968 saw resonator r2632 J3251 filter APPLICATIONS L9453M G1966 SAW FILTER S M R2632 TRANSISTOR SMD MARKING CODE 702
Contextual Info: Contents Selector Guide Alphanumeric Index of Types 7 General Technical Information 27 IF Filters for Intercarrier Applications 47 IF Filters for Quasi/Split Sound Applications 115 IF Filters for Video Applications 181 IF Filters for Audio Applications 217

Contextual Info: TL592B DIFFERENTIAL VIDEO AMPLIFIER SLFS001A – JUNE 1985 – REVISED APRIL 1988 D D D Adjustable Gain to 400 Typ No Frequency Compensation Required Low Noise . . . 3 µV Typ Vn description This device is a monolithic two-stage video amplifier with differential inputs and differential

Contextual Info: 8931 VOICE CO IL M O TO R D RIVER Providing control and drive of the voice coil m otor used for head positioning in disk drive applications, the A8931SEA is a full-bridge driver which can be configured so that its output current is a direct function of an externally applied control voltage or current. This linear

K 3264 fet transistor

Abstract: LF400 lm4105
Contextual Info: LH4105/LH4105C a PRELIMINARY National Semiconductor LH4105/LH4105C Precision Fast Settling High Current Operational Amplifier General Description Features The LH4105 is a fast settling high current Bi-Fet op amp designed for applications that require a fast settling time of

K 3264 fet transistor

Abstract: c 3262 AN428 LF400 G12B LH4105 LH4105C LH4105CG LH4105G K 3264 transistor
Contextual Info: LH4105/LH4105C PRELIMINARY National Jum Semiconductor LH4105/LH4105C Precision Fast Settling High Current Operational Amplifier General Description Features The LH4105 is a fast settling high current Bi-Fet op amp designed for applications that require a fast settling time of

Contextual Info: BUK7608-55A N-channel TrenchMOS standard level FET Rev. 03 — 14 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

A2510

Contextual Info: [g HARRIS H A -2 5 1 0 /1 2 /1 5 High Slew Rate Operational Amplifiers August 1991 Features A pplications • High S le w R a t e . 6 0 V / is • D ata A cq uisition System s • Fast S e t t lin g . 2 50 n s