CY14B101LA-SZ45XI
Abstract: CY14B101LA-SZ25XI
Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features • Packages ❐ 32-Pin small-outline integrated circuit (SOIC) ❐ 44-/54-Pin thin small outline package (TSOP-II) ❐ 48-Pin shrink small-outline package (SSOP)
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CY14B101LA
CY14B101NA
CY14B101LA)
CY14B101NA)
32-Pin
44-/54-Pin
48-Pin
CY14B101LA-SZ45XI
CY14B101LA-SZ25XI
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Untitled
Abstract: No abstract text available
Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features • Packages ❐ 32-Pin small-outline integrated circuit (SOIC) ❐ 44-/54-Pin thin small outline package (TSOP II) ❐ 48-Pin shrink small-outline package (SSOP)
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CY14B101LA
CY14B101NA
32-Pin
44-/54-Pin
48-Pin
48-Ball
CY14B101LA)
CY14B101NA)
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CY14a101
Abstract: CY14A101L
Text: CY14V101LA CY14V101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1 Mbit (128K × 8/64K × 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K × 8 (CY14V101LA) or 64 K × 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small
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CY14V101LA
CY14V101NA
8/64K
CY14V101LA/CY14V101NA
CY14a101
CY14A101L
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CY14a101
Abstract: CY14A101L
Text: CY14V101LA CY14V101NA 1 Mbit 128 K x 8/64 K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K x 8 (CY14V101LA) or 64 K x 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small
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CY14V101LA
CY14V101NA
8/64K
CY14V101LA/CY14V101NA
CY14a101
CY14A101L
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CY14B101LA-SZ45XI
Abstract: CY14B101LA-SZ25XI
Text: CY14B101LA CY14B101NA 1-Mbit 128K x 8/64K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 128 K x 8 (CY14B101LA) or 64 K x 16 (CY14B101NA) ■ Hands off automatic STORE on power down with only a small
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Original
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CY14B101LA
CY14B101NA
8/64K
CY14B101LA/CY14B101NA
CY14B101LA-SZ45XI
CY14B101LA-SZ25XI
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PDF
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CY14a101
Abstract: CY14V101LA-BA45 CY14A101L
Text: CY14V101LA CY14V101NA 1 Mbit 128 K x 8/64 K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K x 8 (CY14V101LA) or 64 K x 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small
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Original
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CY14V101LA
CY14V101NA
8/64K
CY14V101LA/CY14V101NA
CY14a101
CY14V101LA-BA45
CY14A101L
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948AL
Abstract: N64S830HAS22I N64S830HAT22I N64S830HAS22IT
Text: N64S830HA 64 Kb Low Power Serial SRAMs 8 K x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 64 K serially accessed Static Random Access Memory, internally organized as 8 K words by 8 bits.
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N64S830HA
N64S830HA
N64S830HA/D
948AL
N64S830HAS22I
N64S830HAT22I
N64S830HAS22IT
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PDF
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Untitled
Abstract: No abstract text available
Text: N64S830HA 64 kb Low Power Serial SRAMs 8 k x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 64 k serially accessed Static Random Access Memory, internally organized as 8 k words by 8 bits.
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N64S830HA
N64S830HA/D
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PDF
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Untitled
Abstract: No abstract text available
Text: N64S818HA 64 kb Low Power Serial SRAMs 8 k x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 64 k serially accessed Static Random Access Memory, internally organized as 8 k words by 8 bits.
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N64S818HA
N64S818HA/D
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TLO32
Abstract: 948AL N64S818HAS21I N64S818HAT21I
Text: N64S818HA 64 Kb Low Power Serial SRAMs 8 K x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 64 K serially accessed Static Random Access Memory, internally organized as 8 K words by 8 bits.
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N64S818HA
N64S818HA
N64S818HA/D
TLO32
948AL
N64S818HAS21I
N64S818HAT21I
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PDF
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Untitled
Abstract: No abstract text available
Text: N64S830HA 64 kb Low Power Serial SRAMs 8 k x 8 Bit Organization Introduction http://onsemi.com The ON Semiconductor serial SRAM family includes several integrated memory devices including this 64 k serially accessed Static Random Access Memory, internally organized as 8 k words by 8 bits.
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N64S830HA
N64S830HA
N64S830HA/D
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PDF
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Untitled
Abstract: No abstract text available
Text: N64S818HA 64 kb Low Power Serial SRAMs 8 k x 8 Bit Organization Introduction http://onsemi.com The ON Semiconductor serial SRAM family includes several integrated memory devices including this 64 k serially accessed Static Random Access Memory, internally organized as 8 k words by 8 bits.
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N64S818HA
N64S818HA
N64S818HA/D
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MC1489A
Abstract: 1N3064 232D MC1488 MC1489 MC1489AD MC1489ADR2 MC1489D MC1489DR2
Text: MC1489, MC1489A Quad Line Receivers The MC1489 monolithic quad line receivers are designed to interface data terminal equipment with data communications equipment in conformance with the specifications of EIA Standard No. EIA–232D. • Input Resistance – 3.0 k to 7.0 kΩ
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MC1489,
MC1489A
MC1489
r14525
MC1489/D
MC1489A
1N3064
232D
MC1488
MC1489AD
MC1489ADR2
MC1489D
MC1489DR2
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Untitled
Abstract: No abstract text available
Text: N25S830HA 256 kb Low Power Serial SRAMs 32 k x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 256 kb serially accessed Static Random Access Memory, internally organized as 32 k words by
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N25S830HA
N25S830HA/D
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PDF
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N25S830HAS22IT
Abstract: 948AL N25S830HAS22I N25S830HAT22I N25S830HAT22IT N25S830HAS2
Text: N25S830HA 256 Kb Low Power Serial SRAMs 32 K x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 256 Kb serially accessed Static Random Access Memory, internally organized as 32 K words by
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Original
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N25S830HA
N25S830HA/D
N25S830HAS22IT
948AL
N25S830HAS22I
N25S830HAT22I
N25S830HAT22IT
N25S830HAS2
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PDF
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N25S818HAT21I
Abstract: 948AL N25S818HAS21I
Text: N25S818HA 256 Kb Low Power Serial SRAMs 32 K x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 256 Kb serially accessed Static Random Access Memory, internally organized as 32 K words by
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N25S818HA
N25S818HA/D
N25S818HAT21I
948AL
N25S818HAS21I
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PDF
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Untitled
Abstract: No abstract text available
Text: N25S818HA 256 kb Low Power Serial SRAMs 32 k x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 256 kb serially accessed Static Random Access Memory, internally organized as 32 k words by
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Original
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N25S818HA
N25S818HA/D
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PDF
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Untitled
Abstract: No abstract text available
Text: N25S830HA 256 kb Low Power Serial SRAMs 32 k x 8 Bit Organization Introduction http://onsemi.com The ON Semiconductor serial SRAM family includes several integrated memory devices including this 256 kb serially accessed Static Random Access Memory, internally organized as 32 k words by
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N25S830HA
N25S830HA/D
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PDF
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MC1489
Abstract: MC1489A 1N3064 232D MC1488 MC1489AD MC1489D MC1489DR2 MTTL
Text: MC1489, MC1489A Quad Line EIA-232D Receivers The MC1489 monolithic quad line receivers are designed to interface data terminal equipment with data communications equipment in conformance with the specifications of EIA Standard No. EIA–232D. • Input Resistance – 3.0 k to 7.0 kΩ
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Original
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MC1489,
MC1489A
EIA-232D
MC1489
r14525
MC1489/D
MC1489A
1N3064
232D
MC1488
MC1489AD
MC1489D
MC1489DR2
MTTL
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PDF
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MC1489A
Abstract: No abstract text available
Text: Back MC1489, MC1489A Quad Line EIA-232D Receivers The MC1489 monolithic quad line receivers are designed to interface data terminal equipment with data communications equipment in conformance with the specifications of EIA Standard No. EIA–232D. • Input Resistance – 3.0 k to 7.0 kΩ
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MC1489,
MC1489A
EIA-232D
MC1489
MC1488
r14525
MC1489/D
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PDF
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STR - Z 2062
Abstract: MS27490-22D 030-2155-000 MS27499 S27490-20 225-1013-000 MS27490-22 MS27513 MS27491-22M din en 3767
Text: M IL-C-38999 Series I, II, III Connectors SERIES I K JL/K J/K JA SERIES II GROUNDING FIN GERS Standard on Series I connector C LO SED EN TR Y S O C K ET CONTACT DESIGN SERIES III S H E LL HARDW ARE Is alum inum alloy HIGH STREN GTH M ULTIPLE-TINE M ETAL RETAINING CLIP
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OCR Scan
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IL-C-38999
STR - Z 2062
MS27490-22D
030-2155-000
MS27499
S27490-20
225-1013-000
MS27490-22
MS27513
MS27491-22M
din en 3767
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Untitled
Abstract: No abstract text available
Text: K JL/K J/K JA M IL-C-38999 Series I, II, III Connectors SERIES II SERIES I SERIES III S H E L L H A RD W A RE is alum inum alloy H IGH STREN GTH MULTIPLE-TINE M E T A L R ETAINING CLIP assures positive retention with inwardly deflected tines that lock securely behind contact shoulder
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OCR Scan
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IL-C-38999
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PDF
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dS 3202
Abstract: 1SS222 1SS223 VETTE
Text: * • h Silicon Switching Diodes 1SS222.223 I * 's 7 J U y ° l s - j- W s 'J =!>•?'' t - F K jß tX - f Silicon Epitaxial Diode High Speed Switching W & IÜ / P A C K A G E DIMENSIONS ¡8 * / F E A T U R E S n^ K h 7 ( ; > X X 9 (U n it : mm t L T fltt .
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SS222
1SS222
dS 3202
1SS223
VETTE
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN6042 Thick-Film Hybrid 1C S T K 6 7 2 - 1 2 0 /«S/li ////k m g m ' Unipolar Fixed-Current Chopper Self-Excited PWM Scheme and Built-in Phase Signal Distribution IC Two-Phase Stepping Motor Driver
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OCR Scan
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EN6042
STK672-120
D0E17Eb
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PDF
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