BAV170
Abstract: No abstract text available
Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 ! , , Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BAV170.
BAV170
BAV170
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BAV170
Abstract: Marking code jxs Q62702-A920 MarKING Jxs sot23 JXs sot JXs SOT23
Text: Silicon Low Leakage Diode Array BAV 170 Low leakage applications ● Medium speed switching times ● Common cathode ● Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol
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Q62702-A920
OT-23
BAV170
Marking code jxs
Q62702-A920
MarKING Jxs sot23
JXs sot
JXs SOT23
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BAV170
Abstract: No abstract text available
Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BAV170.
BAV170
BAV170
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BAV170
Abstract: No abstract text available
Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BAV170.
BAV170
poweV170
EHB00081
Mar-10-2004
BAV170
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Untitled
Abstract: No abstract text available
Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BAV170.
BAV170
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bav170
Abstract: MarKING Jxs sot23
Text: BAV170. Silicon Low Leakage Diode Array Low-leakage applications Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BAV170.
BAV170
EHB00081
EHB00082
Jul-09-2003
bav170
MarKING Jxs sot23
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BAV170
Abstract: No abstract text available
Text: BAV170 3 Silicon Low Leakage Diode Array Low-leakage applications Medium speed switching times 2 Common cathode 1 VPS05161 3 1 2 EHA07004 Type BAV170 Marking JXs Pin Configuration 1 = A1 2 = A2 3 = C1/2 Package SOT23 Maximum Ratings Parameter Symbol
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BAV170
VPS05161
EHA07004
EHB00081
Aug-20-2001
EHB00082
BAV170
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JXs sot
Abstract: BAV170 MarKING Jxs sot23
Text: BAV 170 Silicon Low Leakage Diode Array 3 • Low-leakage applications • Medium speed switching times • Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV 170 JXs Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter
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VPS05161
EHA07004
OT-23
EHB00081
EHB00082
Oct-08-1999
EHB00083
JXs sot
BAV170
MarKING Jxs sot23
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BAV170
Abstract: JXs sot
Text: Silicon Low Leakage Diode Array BAV170 • Low Leakage applications • Medium speed switching times • Common cathode Type Marking O rdering code 8-m m tape Package BAV170 JXs Q62702-A920 SOT 23 Maximum Ratings D escription Symbol Reverse voltage VR BAV170
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BAV170
Q62702-A920
BAV170
100ns
JXs sot
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Low Leakage Diode Array BAV 170 • Low leakage applications • Medium speed switching times • Common cathode Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) 3 » SOT-23 E * J Kl ° EHA0700*
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Q62702-A920
OT-23
a535bos
fl235b05
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A07004
Abstract: JXs sot
Text: SIEMENS Silicon Low Leakage Diode Array BAV 170 • Low leakage applications • Medium speed switching times • Common cathode Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) 3 « SOT-23 EH I M ° EH A07004
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Q62702-A920
OT-23
A07004
A07004
JXs sot
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SMD MARKING CODE JYP
Abstract: JYP SOT23 Marking Code SMD za BAV199 MARKING A53 diode smd A53 SMD
Text: Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV199 PINNING • Plastic SMD package PIN DESCRIPTION • Low leakage current: typ. 3 pA 1 • Switching time: typ. 0.8 jxs 2 cathode • Continuous reverse voltage: 3 anode; cathode
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BAV199
010113D
SMD MARKING CODE JYP
JYP SOT23
Marking Code SMD za
BAV199
MARKING A53 diode smd
A53 SMD
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sst310
Abstract: SST309 PART MARKING Z08 MARKING marking z08 Z08 SOT 5
Text: fTT*Siliconix SST308 SERIES N-Channel JFETs Jm W incorporated The SST308 Series is the surface mount equivalent of our popular J308 Series. It features high-gain > 8000 jxS , low noise (typically < 6nWHz) and low gate leakage (typically < 2 pA). Of special interest,
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SST308
SST309
SST310
OT-23
sst310
SST309 PART MARKING
Z08 MARKING
marking z08
Z08 SOT 5
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7 segment HS 1106 BS
Abstract: SERVICE MANUAL tv TCL t71c ST10 ST10F167 cm 20 mdl 12h st10 Bootstrap
Text: iM g[MSi iroa [¡ao(g§ SGS-THOMSON S T 1 0 F 1 6 7 16-BIT MCU WITH 128K BYTE FLASH M EM O RY PR ELIM IN A R Y D A TA SH EET • High P erform ance 16-bit CPU w ith 4-S tage Pipeline ■ 100 ns Instruction C ycle T im e at 20M H z CPU C lock ■ 500 ns M ultiplication ( 1 6 x 16 bit , 1 jxs Division
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ST10F167
16-BIT
20MHz
PQFP144
ST10F167-Q6
28x28)
7 segment HS 1106 BS
SERVICE MANUAL tv TCL
t71c
ST10
ST10F167
cm 20 mdl 12h
st10 Bootstrap
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JXs sot
Abstract: No abstract text available
Text: BAS40 THRU BAS40-06 Schottky Diodes FEATURES SOT-23 •122 3.1 .118 (3.0) ♦ Top View .016 (0.4) These diodes feature very low turn-on voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS40
BAS40-06
OT-23
OT-23
BAS40-04
BAS40
BAS40-05
JXs sot
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Untitled
Abstract: No abstract text available
Text: BAT54 THRU BAT54S Schottky Diodes FEATURES SOT-23 •122 3.1 .118 (3.0) .016 (0.4) These diodes feature very low turn-on voltage and fast switching. Top View These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic dis
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BAT54
BAT54S
OT-23
BAT54
BAT54A
OT-23
BAT54C
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bc849
Abstract: No abstract text available
Text: BC846 THRU BC849 Small Signal Transistors NPN FEATURES SOT-23 •122 (3.1) .118 (3.0) 016 (0.4) ♦ NPN Silicon Epitaxial Planar Transistors fo r switching and AF am plifier applications. ♦ Especially suited fo r autom atic insertion in th ick- and thin-film circuits.
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BC846
BC849
OT-23
BC847
BC848
BC849
BC856.
BC859
BC846.
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sot-363 marking 3C
Abstract: maxim MARKING CODE 21 71179
Text: S ii 400_ Weiv Product Vishay Siliconix N-Channel 20-V D-S M OSFET PRODUCT SUMMARY r DS(on) (£2) b(A) 0.150 e V GS = 4.5 V 1.7 0.235 e V GS = 2.5 V 1.3 VDS(V) 20 SOT-363 SC-70 (6-LEADS) Marking Code XX £ Lot Traceability and Date Code — Part# Code
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OT-363
SC-70
150cC
S-00826--
24-Apr-00
sot-363 marking 3C
maxim MARKING CODE 21
71179
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Untitled
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR LOW LEAKAGE CO M M O N ANODE DIODE PAIR ISSU E 2 - JANUARY 1996 O DIODE PIN CONNECTION 1 PA R T M A R K IN G D ETA IL - D63 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Repetitive Peak Reverse Voltage V VALUE 100 V 250 mA rrm A ve ra ge Rectified Forward Current
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-200mA
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leader 400 charger
Abstract: lm7221 LM722 c01a LMC7211 LMC7221 LMC7221AIN LMC7221BIM LMC7221BIN M08A
Text: September 1995 Semiconductor ß LMC7221 Tiny CMOS Comparator with Rail-To-Rail Input and Open Drain Output General Description Features The LM7221 is a micropower CMOS comparator available in the space saving SOT23-5 package. This makes this comparator Ideal for space and weight critical designs. The
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LMC7221
LM7221
OT23-5
LMC7221
LMC7211
0541S-000
leader 400 charger
LM722
c01a
LMC7221AIN
LMC7221BIM
LMC7221BIN
M08A
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A1S diode
Abstract: Marking code jxs JXs sot marking code a1s marking 7S marking code AC sot 323 diode diode a1s
Text: SIEMENS BAW 56W Silicon Switching Diode Array •For high speed switching applications ■Common anode k l/A i m TJ U Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter
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Q62702-A1031
OT-323
40mmm
A1S diode
Marking code jxs
JXs sot
marking code a1s
marking 7S
marking code AC sot 323 diode
diode a1s
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MMBT200
Abstract: pn200
Text: PN200/MMBT200 E J l National J u t Semiconductor PN200 MMBT200 UjT /M/ /#/ M TO-236 SOT-23 TO-92 ED U ' TL/G/10100-5 *C . TL/G/10100-1 P N P G e n e r a l P u r p o s e A m p lif ie r E le c tric a l C h a r a c t e r is t ic s ta = 25°c unless otherwise noted
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PN200/MMBT200
PN200
MMBT200
OT-23)
MMBT200
pn200
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Untitled
Abstract: No abstract text available
Text: BAV70 Small Signal Diodes FEATURES SOT-23 ♦ Silicon Epitaxial Planar Diodes ♦ Fast switching dual diode with common cathode ♦ This diode is also available in other configurations including: a dual anode to cathode with type designation BAV99, a dual common anode
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BAV70
OT-23
BAV99,
BAW56,
BAL99.
OT-23
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Untitled
Abstract: No abstract text available
Text: BASI 6 Small Signal Diodes FEATURES SOT-23 •122 3.1 .118 (3 O') .016 (0.4) Top View r^i ♦ Silicon Epitaxial Planar Diode ♦ Fast switching diode in case SOT-23, especially suited for automatic inser tion. .037(0.95) .037(0.95) = n=Jrf .016 (0.4) •016(0.4)
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OT-23
OT-23,
OT-23
BAS16
OT-23)
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