jx 903
Abstract: G200 c 4977 transistor ptf10135
Text: PTF 10135 GOLDMOS Field Effect Transistor 5 Watts, 2.0 GHz Description The PTF 10135 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB minimum gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
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P5182
1-877-GOLDMOS
1522-PTF
jx 903
G200
c 4977 transistor
ptf10135
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jx 903
Abstract: f10107 PTF 10107 ptf10107 ge-14 transistor
Text: GOLDMOS PTF 10107 Field Effect Transistor 5 Watts, 2.0 GHz Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
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P5182
1-877-GOLDMOS
1522-PTF
jx 903
f10107
PTF 10107
ptf10107
ge-14 transistor
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TMCX285
Abstract: No abstract text available
Text: CCW Continuously Corrugated Welded Cable A RMORED CAB LE FO R HAZAR D O U S LOCATI O N S OCTOBER 2014 CCW® Servicing Industrial and Specialty Applications This catalog contains in-depth information on the most comprehensive line of CCW® instrumentation, power, control,
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INS-0105-R1014
TMCX285
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A1000-REV00k9040-IE
Abstract: AX-REM01K9050-IE a1000-fia3071-re A1000-FIV3005-RE A1000-REV00k6050-IE A1000FIA3105RE AX-FIM1024-RE
Text: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/238731'</32+ +22'/3 ";CI?A; A?;CI;, ? ? :;:?97I?7AH;IIDG;;A;IIGDC?9D G;AE;G9?G9J?IDHI7BE7ID B?9GD?CI;GGJIIDG? ;99
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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MAX900ACWP
Abstract: MAX900 MAX900ACPP MAX900BCPP MAX900BCWP MAX901 MAX902 MAX903 MAX900A
Text: > i/iy jx i/i/i 19-2887; Rev. 2; 7/91 , H igh-Speed Lo w -P ow er V o ltag e C om parators The MAX900-903 high-speed, low-power, s in g le /d u a l/ qu a d vo lta g e c o m p a ra to rs fe a tu re d iffe re n tia l ana log in p u ts and TTL lo g ic o u tp u ts with a ctive internal
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MAX900-903
MAX900
Vcc-17J
AX900/901/902/903
MAX900ACWP
MAX900ACPP
MAX900BCPP
MAX900BCWP
MAX901
MAX902
MAX903
MAX900A
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lm 398- SAMPLE AND HOLD
Abstract: S2044 S2049 D1133
Text: PRELIMINARY DEVICE SPECIFICATION M C GLM C O M P L IA N T S E R IA L IN TER FAC E CIRCUITS FEATURES • • • • • • • • • • • • • • • Complies with the electrical and link levels of the Gigabaud Link Module GLM specification Functionally compliant with ANSI X3T11 Fibre
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2044/S2049
X3T11
S2044
S2049
20-bit
S2044/S2049
S2044B-5--
lm 398- SAMPLE AND HOLD
D1133
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Untitled
Abstract: No abstract text available
Text: C E R A M IC MICROW AVE FILTERS BAN D PASS FILTERS-MB TYPE m nffnta /nnoytttan in EUttnonics DFC Series 2 -P O L E -L O W C O S T T R A N S M IS S IO N vs. R E FLE C TIO N C H A R A C TE R IS TIC S D IM E N S IO N S : m m S P E C IFIC A TIO N S E -A M P S /IS M /G S M
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836P025H
881P025H
903P002H
927P002H
CG01-J
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FC903
Abstract: N3869
Text: j - KNo. N3869a ] - i - X N°3869 ¿1 5 V f r X X < £ £ l \ r ^ O A o v u = i > x + F U 9 0 3 ras -iJÉifc0 C P { c i r - r ^ “ Hî:3* i r t j K b f c « Â ^ - r x - c * u . n n s f t ^ ^ f i i c r y x - c t s . •FC903 fiDSBOlOtB ^ « f - y X3i fc H - * - * ÆMMÊf L fc fc ® "0 * * .
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FC903
FC903fiDSBOlOtB
100mA
T370-D5
7nr7Sr75r
7151MH/*
Ne3869-1
FC903
N3869
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hef4751
Abstract: TDD1742T td01742t hef4750 VMUX HEF4750V N2411 TDD1742 1742T
Text: Preliminary specification Philips Semiconductors RF Communications Products TDD1742T CMOS frequency synthesizer G ENER AL DESCRIPTION The T D D 1 74 2 T is a low power, high-performance frequency synthesizer in local oxidation CMOS LOCMOS technology. The device is designed for use in channelized V H F /U H F applications especially
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TDD1742T
TDD1742T
HEF4751
024-B
82S129
hef4751
td01742t
hef4750
VMUX
HEF4750V
N2411
TDD1742
1742T
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B-26
Abstract: No abstract text available
Text: Ribbon Cable Connectors D 1.27mm .050" Pitch m o le x FEATURES AND SPECIFICATIONS Header Features and Benefits ilectrical • Polarizing end walls and pegs Voltage: 250V ■ Stamped contacts with in-line, flat blades Current: 1 .2 A ■ 2 points of contact with female terminal
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PS-99020-0011
E29179
LR19980-181
QQ071fi3
B-26
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d1yd
Abstract: NJU6435 NJU6435D NJU6435E NJU6435F QFP64 HJU6435 CMTA 54 zx 3 k4 050/LT/B2
Text: \1 , as O 2 CO V "rl C— 03 GO 03 CO \ CO \ Ö Ü c X Ö CO V to to CO ••v to \ I H aw §8 A X M s >J s s X >S >i tS3 O CO o CO o rV rV rV V V -r w 3m Mft V m m m s m V V -r ~r V — |g » i Z S CO a CO to LI rfl V SS a • • • • £ □ V" g 58
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NJU6435:
NJU6435
30Key
l20-tzÃ
QFP64
NJUB43SXF
NJU6435D
680pF
NJU6435->
d1yd
NJU6435E
NJU6435F
HJU6435
CMTA 54
zx 3 k4
050/LT/B2
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Untitled
Abstract: No abstract text available
Text: i 4 P /N -1 -1 S F -1 C C -1C C S F -2 -2 S F -2 C C -2C C S F -3 -3 S F -3 C C -3C C S F APPLICABLE NOTE S 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 (0 A) .1 43 .1 43 .1 43 .1 43 .0 88 .0 88 .0 88 .0 88 .1 43 .1 43 .1 43 .1 43 MIN MIN MIN MIN MIN MIN
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QRB1134
Abstract: QRB1133 LF 833
Text: REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1133/1134 DESCRIPTION PACKAGE DIMENSIONS — .328 8.33 .420 (1 0.6 7)— Th e QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.
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QRB1133/1134
QRB1133/1134
QRB1133
QRB1134
LF 833
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thermal fuse 115 250V 2A
Abstract: EM233 FUSE T 3.15A H 250V 40000506 115 2a 250v thermal fuse 315 2A 250V fuse
Text: 5 x 20mm Ceramic Tube Type 5HF / 5HFP Quick-acting Fuse Series High - Breaking Capacity 5 H F A pr2013D HF RoHS6 Compliant c*kOL<s>C€ 5HF / 5HFP Series, 5 x 20mm Quick-acting Fuse Description 5x20mm quick-acting,high breaking capacity, ceramic body cartridge fuse designed, approved and complied with IEC
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pr2013D
5x20mm
IEC-127-2
100mA
EIA-296-F
thermal fuse 115 250V 2A
EM233
FUSE T 3.15A H 250V
40000506
115 2a 250v thermal fuse
315 2A 250V fuse
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DFc21r57
Abstract: DFC3r DFC31 jx 903
Text: CERAMIC MICROWAVE FILTERS BAND PASS FILTERS-M B TYPE m u f fn t n /tutorator ui Electronics DFC Series j / \JV s, S 1/ 1 o • ofk 7 c 7\ w -* o ro o o Return Loss dB r N / r o TRANSMISSION vs. REFLECTION CHARACTERISTICS DIMENSIONS: mm Attenuation (dB) 03 N
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DFC2R836P025HHD
DFC3R836P025HHD
DFC3R881P025HHD
DFC3R915P026HHC
DFC3R902P025HHB
DFC3R947P025HHB
CG01-I
DFc21r57
DFC3r
DFC31
jx 903
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jx 903
Abstract: No abstract text available
Text: MwT-5 26 GHz High Gain Dual GateGaAs FET M ic r o w a v e T e c h n o l o g y ►j45p ►J S Op Unit» In im ►jwp • 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUIT • +14 dBm P1dB IN 6-18 GHz BALANCED CIRCUIT • 0.3 MICRON REFRACTORY METAIVGOLD GATE • DIAMOND-UKE CARBON (DLC PASSIVATION
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HRD050R6
Abstract: HRD05
Text: Outline Dimensions [U n it I m m ] P a c k a g e : AX057 P a c k a g e I AX 0 6 D 3±°i ‘ $ 'Ü *2.6±M P a c k a g e : AX0 6 = 0 27.5^ 27.5 f 2 -M- 27.5 ±2 27.5*2 -M- ®°— S- ^ A x ia l Taping o r R a d ia l Taping P a c k a g e : A X06 P a c k a g e : AX078
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AX057
AX078
HRD050R6-
051R5
HRD050R6
HRNDI2R35
HRD050R6
HRD05
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jx 903
Abstract: LTA 902 AX903 AX900-903 902Z max9008 IC K 902 902-190 MAX900ACWP MAX900A
Text: yi/iyjxiyi/i 19-2887; Rev 2; 7/91 H igh-S peed, L o w -P o w er V o ltag e C om parators ♦ 8ns Typ propagation Delay All c o m p a ra to rs ca n be p o w e re d from s e p a ra te
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MAX900-903
AX900-903
MAX900/901/902/903
jx 903
LTA 902
AX903
902Z
max9008
IC K 902
902-190
MAX900ACWP
MAX900A
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JHDB3
Abstract: ziner diode diode ziner ziner diodes 00 ziner MX7224 ski mx MX7224CQ MX7224KCWN MX7224LCWN
Text: ykiyjxiyvi •9-0308; Rev 1; 7/95 CMOS 8 -B it DAC with Output A m plifier _ Features The MX7224 is a pre cisio n vo lta g e -o u tp u t C M O S d ig ita l-to -a n a lo g co n ve rte r DAC w h ich in clu d e s an o u tp u t a m p lifie r on ch ip . O n ly an external reference
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MX7224
JHDB3
ziner diode
diode ziner
ziner diodes 00
ziner
ski mx
MX7224CQ
MX7224KCWN
MX7224LCWN
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MAX901
Abstract: max903 MAX900ACWP MAX903CPA MAX900 MAX900ACPP MAX900BCPP MAX900BCWP MAX902 MAX900A
Text: 19-2887; Rev. 3; 11/92 H ig h -S p e ed , L o w -P o w e r V o lta g e C o m p a ra to rs _ F e a tu re s ♦ 8ns Typ Propagation Delay A ll c o m p a ra to rs ca n b e p o w e re d fro m s e p a ra te a n a lo g a n d d ig ita l p o w e r s u p p lie s or fro m a s in g le
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MAX900-903
AX900/901/902/903
MAX901
max903
MAX900ACWP
MAX903CPA
MAX900
MAX900ACPP
MAX900BCPP
MAX900BCWP
MAX902
MAX900A
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PD42101
Abstract: upd42101 910-B
Text: NEC JHPD42101 Line Buffer for NTSC TV NEC Electronics Inc. Description Pin Configuration The ^PD42101 is a 910-word by 8-bit line buffer fabri cated with a CMOS silicon-gate process. The device helps to create an NTSC flicker-free television picture noninterlaced scan conversion by providing intermedi
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UPD42101
PD42101
910-word
fiPD42101
910-bit)
pPD42101
JJPD42101
83-003655B
910-B
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DS1245
Abstract: 32-PIN 34-PIN DS1245AB DS1245AB-70 DS1245Y DS1245Y-70 DS9034PC DSI245AB-85
Text: DS1245Y/AB 1024k N o n vo la tile SRAM www.dalsemi.com PIN ASSIGNMENT FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory
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DS1245Y/AB
1024k
DS1245Y)
DS1245AB)
32-pin
DS1245Y/AB
DS1245
34-PIN
DS1245AB
DS1245AB-70
DS1245Y
DS1245Y-70
DS9034PC
DSI245AB-85
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upd42101
Abstract: PD42101 ZXd 27
Text: NEC jn P D 4 2 1 0 1 Line Buffer for NTSC TV NEC Electronics Inc. Description Pin Configuration The jiPD42101 is a 910-word by 8-bit line buffer fabri cated with a CMOS siiicon-gate process. The device helps to create an NTSC flicker-free television picture
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24-Pin
uPD42101
910-word
PD42101
8A-17
ffPD42101
83-0036S5B
ZXd 27
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