78L05 equivalent
Abstract: TO-92 78L05 voltage regulator pin configuration 78l12 transistor 78L12A 78l02ac 12QHz transistor 78L15a 78L06C 78L05C 78L05A
Text: FEATURES ABSOLUTE MAXIMUM RATINGS • OUTPUT CURRENT UP TO 100mA . NO EXTERNAL COMPONENTS • INTERNAL THERMAL OVERLOAD PRO TECTION . INTERNAL SHORT CIRCUIT CURRENT LIMITING • AVAILABLE IN JEDEC TO-92 ANO LOW PROFILE TO-39 PACKAGES . OUTPUT VOLTAGES OF 2.6V, 5V, 6.2V,
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100mA
78L00-AC)
78L00C)
78L05 equivalent
TO-92 78L05 voltage regulator pin configuration
78l12 transistor
78L12A
78l02ac
12QHz
transistor 78L15a
78L06C
78L05C
78L05A
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motorola transistor dpak marking
Abstract: 27550 MC33275 27533 Motorola ic DATA BOOK MC33375 motorola transistor dpak marking 350 Motorola ANALOG
Text: Order this document by MC33275/D MC33275 Low Dropout 300 mA Voltage Regulator The MC33275 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, DPAK, SOT–223, and SOP–8 surface mount packages. These devices feature a
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MC33275/D
MC33275
MC33275
MC33375
motorola transistor dpak marking
27550
27533
Motorola ic DATA BOOK
motorola transistor dpak marking 350
Motorola ANALOG
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FDMC2514SDC
Abstract: No abstract text available
Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®
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7660D
Abstract: L41B 10-L41B-11 FDMC7660DC
Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package
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3006S
Abstract: 10-6327-01
Text: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®
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FDMS3006SDC
FDMS3006SDC
3006S
10-6327-01
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P1900ME
Abstract: P1400AD P1500ME P1800AD P1900NE P2300ME P3100AD P6002AD
Text: Hemar AG, Fendler 50, 5524 Nesselnbach, Tel. +41 56 6183141 Fax. +41 56 6183142 http://www.hemar.ch CATV and HFC SIDACtor Device CATV and HFC SIDACtor Device 1 3 This SIDACtor device is a 1000 A solid state protection device offered in a TO-220 package. It protects equipment located in the severe surge environment of Community Antenna TV
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O-220
P1400AD
160ecay
O-220
P1900ME
P1400AD
P1500ME
P1800AD
P1900NE
P2300ME
P3100AD
P6002AD
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MC33275
Abstract: MC33375 NCV33275 NCV33275ST MC3327
Text: MC33275, NCV33275 300 mA, 2.5 V, Low Dropout Voltage Regulator The MC33275 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, DPAK, SOT−223, and SOP−8 surface mount packages. These devices feature a very low quiescent current and are capable of
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MC33275,
NCV33275
MC33275
OT-223,
MC33375
MC33275/D
NCV33275
NCV33275ST
MC3327
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7834a
Abstract: No abstract text available
Text: Tem ic S e m i c o n d u c t o r s Taping of SMD Couplers TEMIC couplers in SMD packages are available in an anti static 12 mm blister tape in accordance with DIN IEC 286-3 for automatic component insertion. The blister tape is a plastic strip with impressed component
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TCMT1020GS12.
7834a
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L41B
Abstract: 10-L41B-11 FDMS2504SDC
Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 mΩ Features Dual Cool General Description TM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®
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MO-240
Abstract: 10dc rectifier
Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS8570SDC
FDMS8570SDC
MO-240
10dc rectifier
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2224B
Abstract: 2N2907 PNP Transistor to 92 transistor pnp 30V 2A 1W 1N4148 75V 150mA Diodes 2N2907 PNP Transistor TRANSISTOR pnp 0.15W 2N2907 LT1123 LT1123CZ MJE1123
Text: LT1123 Low Dropout Regulator Driver U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Extremely Low Dropout Low Cost Fixed 5V Output, Trimmed to ±1% 700µA Quiescent Current 3-Pin TO-92 Package 1mV Line Regulation 5mV Load Regulation Thermal Limit
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LT1123
LT1123
125mA
125ise
2224B
2N2907 PNP Transistor to 92
transistor pnp 30V 2A 1W
1N4148 75V 150mA Diodes
2N2907 PNP Transistor
TRANSISTOR pnp 0.15W
2N2907
LT1123CZ
MJE1123
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tesec DV240
Abstract: AN1029 AN-569 DV240 NDS9956 213 so8
Text: AN1029 April, 1996 Maximum Power Enhancement Techniques for SO-8 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus
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AN1029
tesec DV240
AN1029
AN-569
DV240
NDS9956
213 so8
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37525
Abstract: marking 37525 MC33375
Text: Order this document by MC33375/D MC33375 Advance Information Low Dropout 300 mA Voltage Regulator with ON/OFF Control The MC33375 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT–223,
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MC33375/D
MC33375
MC33375
37525
marking 37525
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G30-88
Abstract: Theta JB QFP PACKAGE thermal resistance die down JC15-1 G-38-87 G38-87 Theta-J 32 QFP PACKAGE thermal resistance 2500AN QFP PACKAGE thermal resistance
Text: Thermal Measurement Report Package Description: DATE: 5/8/96 revised 11/18/96 Package: 240 32 x 32 mm QFP Die Down Flag: 10.6 mm Square Leadframe: SIDN 1234625 Die Attach: JMI 2500AN Mold Compound: Sumitomo 7304LC Assembled: ANAM Die: PST6 - 10.16 mm Square
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2500AN
7304LC
G38-87
115x102
RXMN60
RBDT20
G30-88
Theta JB
QFP PACKAGE thermal resistance die down
JC15-1
G-38-87
Theta-J
32 QFP PACKAGE thermal resistance
2500AN
QFP PACKAGE thermal resistance
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C33275
Abstract: Transistor t30 motorola MC33275
Text: Order this document by MC33275/D MOTOROLA Preliminary Information Low Dropout 300 mA Voltage Regulator The MC33275 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, DPAK, SOT-223, and SOP-8 surface mount packages. These devices feature a
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MC33275/D
MC33275
OT-223,
MC33375)
C33275
Transistor t30 motorola
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E78996
Abstract: IR E78996 15ETX06FP 15ETX06 IRFP250
Text: 15ETX06, 15ETX06FP Vishay High Power Products Hyperfast Rectifier, 15 A FRED PtTM FEATURES 15ETX06 15ETX06FP • Benchmark ultralow forward voltage drop • Hyperfast recovery time • Low leakage current • 175 °C operating junction temperature • Fully isolated package VINS = 2500 VRMS
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15ETX06,
15ETX06FP
15ETX06
E78996
18-Jul-08
IR E78996
15ETX06FP
15ETX06
IRFP250
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37525
Abstract: MC33375 TRANSISTOR 37518
Text: MC33375 Advance Information 300 mA, 2.5 V, Low Dropout Voltage Regulator with On/Off Control The MC33375 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT–223, and SOP–8 surface mount packages. These
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MC33375
MC33375
r14525
MC33375/D
37525
TRANSISTOR 37518
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AN9409
Abstract: transistors 9409 477J mosfet SOA testing Harris Semiconductor to220 power transistor RFD3055 RFP70N06 DB233 transistors+9409
Text: Harris Semiconductor No. AN9409 Harris Power MOSFETs August 1994 SAFE OPERATING AREA TESTING WITHOUT A HEAT SINK Authors: Wally Williams and Stan Benczkowski Introduction package at a very predictable rate since constant power circuits are usually used in SOA testing. There is also heat flow
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AN9409
1-800-4-HARRIS
AN9409
transistors 9409
477J
mosfet SOA testing
Harris Semiconductor to220 power transistor
RFD3055
RFP70N06
DB233
transistors+9409
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VS-8E2TX06-x
Abstract: 8E2TX06-E 8E2TX06 IRFP250 VS-8E2TX06-E VS-8E2TX06FP-E VS-8E2TX06-M IRFP250 pin out v1062
Text: VS-8E2TX06-x, VS-8E2TX06FP-x Vishay High Power Products Hyperfast Rectifier, 8 A FRED Pt 8E2TX06 FEATURES 8E2TX06FP • True 2 pin package • Hyperfast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature
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VS-8E2TX06-x,
VS-8E2TX06FP-x
8E2TX06
8E2TX06FP
2002/95/EC
O-220AC
18-Jul-08
VS-8E2TX06-x
8E2TX06-E
8E2TX06
IRFP250
VS-8E2TX06-E
VS-8E2TX06FP-E
VS-8E2TX06-M
IRFP250 pin out
v1062
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IRF E78996
Abstract: IRK E78996 701819-303ac
Text: Bulletin I27141 rev. C 09/97 IRK.91 SERIES NEW ADD-A-pakTM Power Modules STANDARD DIODES Features Electrically isolated: DBC base plate 100 A 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly High surge capability
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I27141
E78996
IRF E78996
IRK E78996 701819-303ac
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schottky barrier diode b22
Abstract: FB240M schottky B22 JESD-51
Text: FB220M~FB240M SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 2.0 Ampere FEATURES Mite Flat • Very low profile package – 0.80mm • High efficiency • Extremely fast switching • Negligible switching losses
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FB220M
FB240M
DO-222AA
J-STD-020C
AEC-Q101
2002/95/EC
DO-222AA
schottky barrier diode b22
FB240M
schottky B22
JESD-51
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Untitled
Abstract: No abstract text available
Text: FB220M~FB240M SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 2.0 Ampere FEATURES Mite Flat • Very low profile package – 0.80mm • High efficiency • Extremely fast switching • Negligible switching losses
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FB220M
FB240M
DO-222AA
AEC-Q101
2002/95/EC
J-STD-020C
DO-222AA
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Untitled
Abstract: No abstract text available
Text: LBR106 thru LBR110 LEADLESS SURFACE MOUNT BRIDGE RECTIFIER REVERSE VOLTAGE – 600 to 1000 Volts FORWARD CURRENT – 1.0 Ampere LBR FEATURES • Low profile package – 1.00mm • Low power loss & high efficiency • High current capability MECHANICAL DATA
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LBR106
LBR110
J-STD-002
JESD22-B102
2002/95/EC
JESD22-A114)
J-STD-020C
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8E2TX06
Abstract: No abstract text available
Text: VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • True 2 pin package • Hyperfast recovery time • Low forward voltage drop • Low leakage current 2L TO-220AC • 175 °C operating junction temperature
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VS-8E2TX06-E,
VS-8E2TX06-M,
VS-8E2TX06FP-E
O-220AC
O-220
2002/95/EC
18-Jul-08
8E2TX06
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