JUNCTION FETS JFETS Search Results

JUNCTION FETS JFETS Result Highlights (5)

Part	Manufacturer	Description
DG191AP/B	Rochester Electronics LLC	DG191 - Dual SPDT, High-Speed Drivers with JFET Switch
DG182AP/B	Rochester Electronics	DG182 - Dual SPST, High-Speed Drivers with JFET Switch
ISL28210FBZ-T13	Renesas Electronics Corporation	Precision Low Noise JFET Operational Amplifiers
ISL28210FBZ-T7A	Renesas Electronics Corporation	Precision Low Noise JFET Operational Amplifiers
ISL28210FBZ	Renesas Electronics Corporation	Precision Low Noise JFET Operational Amplifiers

JUNCTION FETS JFETS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
P-Channel Depletion Mode FET Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in	Original	PDF	AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
P-Channel Depletion Mosfets Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in	Original	PDF	AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
MP833 Abstract: e201 siliconix MPF4118 MPF4117 INTERFET SMP4117 TP3370 MP830 SMP3370 TP4119 Text: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS loss 9t. VGS(Off) Max loss Max CI. Max PD Max (V) (A) Min (S) Max (V) (A) (F) (W) Derate at (WrC) Tope, Max (OC) Package Style N-Chann I JFETs, (Cont'd) 5 10 MPF4117A PN4117 PN4117A PN4117A PN4117A	Original	PDF	MPF4117A PN4117 PN4117A SMP4117 TMPF4117 TP4117 2N4117 MP833 e201 siliconix MPF4118 MPF4117 INTERFET TP3370 MP830 SMP3370 TP4119
Motorola MPF105 Abstract: E309 2N5459 MOTOROLA BF244SM U316 Y300C PN5434 72 sot 23 310M TP5105 Text: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS loss 9t. (V) (A) Min (S) Max VGS(off) Max (V) IGSS Max (A) C'n Max (F) Po Max (W) Derate at (WrC) TOper Max (OC) Package Style N-Channel JFETs, (Cont'd) 5 10 SMPJ210 TMPFJ210 J300B J300B J300B SMPJ300B	Original	PDF	SMPJ210 TMPFJ210 J300B SMPJ300B TMPFJ300B SMP5105 TMPF5105 TP5105 Motorola MPF105 E309 2N5459 MOTOROLA BF244SM U316 Y300C PN5434 72 sot 23 310M
J300D Abstract: E212 siliconix MP5912 GAA 645 BF246A Text: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) gf. Min (S) Max VGS(Off) Max (V) IGSS Max (A) CI. Max (F) PD Max (W) Derate at Toper (WrC) JOC) Max Package Style N-Channel JFETs, (ContI d) 5 10 15 20 J109•18 MFE2011 MFE2011 TPJ109	Original	PDF	MFE2011 TPJ109 PN5163 SMP5163 TMPF5163 TP5163 MP5912 J300D E212 siliconix GAA 645 BF246A
2SJ72BL Abstract: PN4342 2SJ74GR 2SJ72GR 2SJ72-G 2sj74bl 2Sj72 2SJ74Y 2N4360 diode 20D Text: JUNCTION FETs Item Number Part Number Manufacturer gt. V BA GSS loss (V) (A) Min (S) Max 6.0m 6.0m 6.0m 6.0m 8.0m 9.0m 9.0m 15m 15m 15m Him 15m 15m 15m 15m 15m 15m 15m 15m 30m 1.0m 1.0m 1.5m 1.5", 800u 1.0m 1.0m 2.2m 2.2m 3.0m 3.0m 1.3m 0.8m 800u 800u 1.0m	Original	PDF	2N2500 2N3332 2N2498 2N3330 2N4089 UCS51 SMP3331 TMPF3331 TP3331 TMPF3820 2SJ72BL PN4342 2SJ74GR 2SJ72GR 2SJ72-G 2sj74bl 2Sj72 2SJ74Y 2N4360 diode 20D
2SK117BL Abstract: nec 2sk163 2Sk68a 2SK163 TO92 2sk163 2SK117-BL UC240 2SK523M 2SK105 TO92 2SK117-BL(F) Text: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS loss 91s VGS(OH) IGSS (V) (A) Min (S) Max Max (V) Max (A) 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m	Original	PDF	2N3069 2N3069A NDF9406 NDF9407 NDF9408 NDF9409 NDF9410 UC240 2SK117BL nec 2sk163 2Sk68a 2SK163 TO92 2sk163 2SK117-BL 2SK523M 2SK105 TO92 2SK117-BL(F)
2N5640 equivalent Abstract: BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching 2N5640 N–Channel — Depletion 1 DRAIN 3 GATE 1 2 2 SOURCE Rating Symbol Value Unit VDS 30 Vdc Drain–Source Voltage Drain–Gate Voltage VDG 30 Vdc VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C	Original	PDF	2N5640 226AA) Gate218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 2N5640 equivalent BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431
2N5457 MOTOROLA Abstract: 2N5457 equivalent BC237 transistor 2N5457 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc	Original	PDF	2N5457 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N5457 MOTOROLA 2N5457 equivalent BC237 transistor 2N5457
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Low Frequency/ Low Noise J202 N–Channel — Depletion 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 40 Vdc Drain – Gate Voltage	Original	PDF	226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237
On semiconductor date Code mpf4393 Abstract: replacement for 2n2905 motorola JFET 2N3819 BF245 application note BC237 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching MPF4392 MPF4393 1 DRAIN N–Channel — Depletion 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 30 Vdc Drain – Gate Voltage VDG 30 Vdc	Original	PDF	MPF4392 MPF4393 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 On semiconductor date Code mpf4393 replacement for 2n2905 motorola JFET 2N3819 BF245 application note BC237
2N5640 MOTOROLA Abstract: 2N5640 2N5640 equivalent Text: MOTOROLA Order this document by 2N5640/D SEMICONDUCTOR TECHNICAL DATA JFETs Switching 2N5640 N–Channel — Depletion 1 DRAIN 3 GATE 1 2 2 SOURCE Rating Drain–Source Voltage Drain–Gate Voltage Symbol Value Unit VDS 30 Vdc VDG 30 Vdc VGSR 30 Vdc Forward Gate Current	Original	PDF	2N5640/D 2N5640 226AA) 2N5640 MOTOROLA 2N5640 2N5640 equivalent
2N5457 MOTOROLA Abstract: 2N5457 Text: MOTOROLA Order this document by 2N5457/D SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc	Original	PDF	2N5457/D 2N5457 226AA) 2N5457/D* 2N5457 MOTOROLA 2N5457
BC517 spice model Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information	Original	PDF	VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S

p channel depletion mosfet Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets Text: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the	Original	PDF	AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
AN211A Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide	Original	PDF	AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
MPF102 equivalent transistor Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET Text: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or	Original	PDF	AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET
2N3797 Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide	Original	PDF	AN211A/D AN211A 2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
fet vcr compatible Abstract: application note jfet J111 transistor jfet transistor for VCR VCR2N VCR4N 2N5486 AN105 J111 PN4119A SST111 Text: AN105 FETs As VoltageĆControlled Resistors Introduction: The Nature of VCRs A voltageĆcontrolled resistor VCR may be defined as a threeĆterminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential applied to the third.	Original	PDF	AN105 11-Jul-94 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible application note jfet J111 transistor jfet transistor for VCR VCR2N VCR4N 2N5486 AN105 J111 PN4119A SST111
P-Channel Depletion Mode FET Abstract: P-Channel Depletion Mosfets 2N4391 MOTOROLA MPF970 "P-Channel JFETs" JFETs Junction FETs MPF4091 2N4091 2N4856 MPF971 Text: Motorola offers a line of field-effect transistors that encom passes the latest technology and covers the full range of FET applications. Included here is a wide variety of junction FETs, MOSFETs with P- or N-channel polarity with both single and dual gates and TMOS FETs. These FETs include devices de	OCR Scan	PDF	MPF971 N3993 N3994 2N4859A 2N4856A 2N4856 N4859 2N4391 MPF4391 2N4091 P-Channel Depletion Mode FET P-Channel Depletion Mosfets 2N4391 MOTOROLA MPF970 "P-Channel JFETs" JFETs Junction FETs MPF4091
2N5460 Abstract: No abstract text available Text: Philips Semiconductors Preliminary specification P-channel junction FETs 2N5460; 2N5461; 2N5462 DESCRIPTION P-channel silicon junction FET in a TO-92 plastic envelope. Intended for use as an analog switch and an amplifier. PINNING - TO-92 PIN DESCRIPTION 1	OCR Scan	PDF	2N5460; 2N5461; 2N5462 2N5460/5461/5462 2N5460 2N5461 2N5460
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Sw itching N-Channel — Depletion 1 DRAIN 2 SOURCE Rating D rain-Source Voltage D ra in -G a le Voltage Reverse G ate -S o u rce Voltage Symbol Value Unit Vds 30 Vdc vdg 30 Vdc vgsr 30 Vdc mAdc Forward G ate Current	OCR Scan	PDF
2NS457 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs — General Purpose N-Channel — Depletion 2N5457 1 DRAIN ‘ M otorola Preferred D evice MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating V DS 25 Vdc D rain-Gate Voltage VDG 25 Vdc Vdc Reverse Gate-Source Voltage	OCR Scan	PDF	2N5457 2NS457
2N4222 Abstract: 2N4221 2N4220 2n4221a 2N4222A 2N4220A Text: I 2N4220, A thru 2N4222, A C A SE 20 03, STY LE 3 TO-72 TO-206AF 1 Drain MAXIMUM RATINGS Rating Symbol Valut Draln-Source Voltage vds 30 Unit Vdc Dratn-Gate Voltage vdg 30 Vdc Gate-Source Voltage Vg s Id -3 0 Vdc 16 300 2 mAdc mW mW« JFETs LOW FREQUENCY, LOW N O ISE	OCR Scan	PDF	2N4220, 2N4222, O-206AF) 2N4222 2N4221 2N4220 2n4221a 2N4222A 2N4220A

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JUNCTION FETS JFETS Search Results

JUNCTION FETS JFETS Result Highlights (5)

JUNCTION FETS JFETS Datasheets Context Search

P-Channel Depletion Mode FET

P-Channel Depletion Mosfets

MP833

Motorola MPF105

J300D

2SJ72BL

2SK117BL

2N5640 equivalent

2N5457 MOTOROLA

BC237

On semiconductor date Code mpf4393

2N5640 MOTOROLA

2N5457 MOTOROLA

BC517 spice model

p channel depletion mosfet

AN211A

MPF102 equivalent transistor

2N3797

fet vcr compatible

P-Channel Depletion Mode FET

2N5460

Untitled

2NS457

2N4222