JUL30 Search Results

Q67040-A4222-A2

Contextual Info: BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VCE IC BUP 306D 1200V 23A Pin 3 C E Package Ordering Code

A4200

Abstract: bup304 BUP 200 Q67078-A4200-A2
Contextual Info: BUP 304 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 304 1000V 35A Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4200-A2 Maximum Ratings

MC9S12XHY128

Abstract: MC9S12XHY256 0M23Y 9S12XHY256 9s12hy64 dps 161 psu MC9S12XHY LCD40F4BV2 bosch can 2.0A S12XHY256
Contextual Info: MC9S12XHY256 Reference Manual Covers MC9S12XHY Family Data Sheet: Advance Information This document contains information on a new product. Specifications and information here in are subject to change without notice. S12 Microcontrollers MC9S12XHY256RMV1 Rev. 0.12

BUP 300

Abstract: bup300
Contextual Info: BUP 300 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 300 1200V 3.6A Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4203-A2 Maximum Ratings

Contextual Info: MC9S12XHY256 Reference Manual Covers MC9S12XHY Family Data Sheet: Advance Information This document contains information on a new product. Specifications and information here in are subject to change without notice. S12 Microcontrollers MC9S12XHY256RMV1 Rev. 1.01

Contextual Info: BUP 314 Infineon IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 314 1200V 52A Pin 3 C E Package Ordering Code TO-218 AB Q67040-A4206 Maximum Ratings

Q67040-A4222-A2

Contextual Info: BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 2 Pin 1 G Type VCE IC BUP 306D 1200V 23A Pin 3 C E Package Ordering Code

bup 313

Abstract: Q67040-A4208-A2 bup313
Contextual Info: BUP 313 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 313 1200V 32A Pin 3 C E Package Ordering Code TO-218 AB Q67040-A4208-A2 Maximum Ratings

bup314d

Abstract: BUP 314D
Contextual Info: BUP 314D Infineon IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VCE IC BUP 314D 1200V 42A Pin 3 C E Package

SOT-343

Abstract: G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note
Contextual Info: BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BUP 314

Abstract: Q67040-A4206-A2
Contextual Info: BUP 314 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 314 1200V 52A Pin 3 C E Package Ordering Code TO-218 AB Q67040-A4206-A2 Maximum Ratings

bup 302

Abstract: bup 400
Contextual Info: BUP 302 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 302 1000V 12A Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4205-A2 Maximum Ratings

BUP 303 IGBT

Abstract: BUP 200
Contextual Info: BUP 303 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 303 1000V 23A Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4202-A2 Maximum Ratings

BFR93AW

Abstract: marking code R2S 34
Contextual Info: BFR93AW NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW

MC9S12XHY256

Abstract: MC9S12XHY128 d768 transistor bosch can 2.0A S12XHY128 0M23Y MC9S12XHY256RMV1 IFR 740 transistor MOS generator cr 665 bosch ADC12B12CV1
Contextual Info: MC9S12XHY256 Reference Manual Covers MC9S12XHY Family Data Sheet: Advance Information This document contains information on a new product. Specifications and information here in are subject to change without notice. S12 Microcontrollers MC9S12XHY256RMV1 Rev. 1.01

Contextual Info: Schem atic: i I Electrical Specifications: @25°C Isolation Voltage: 1500 Vrms Input to Output Turns Ratio: TX 1CT:1CT ±3% RX 1CT:1CT ±3% CABLE SIDE OCL: 350uH Minimum 100KHz 100mV BmADC Q: 16 MIN @1 OOKHz 0.1V Cw/w: 27pF Typical @10DKHz 100mV Insertion

BAV99

Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Contextual Info: BAV99 Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

bup3140

Abstract: BUP 3140 GPT05155 BUP 300 L30 diode 4 pin
Contextual Info: SIEMENS BUP 314D IGBT With Antiparallei Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 314D fc VCE 1200V 42A Pin 3 E C Package Ordering Code

L-3019

Abstract: c4630 BUP 303 IGBT
Contextual Info: SIEMENS BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VcE BUP 306D 1200V 23A h Pin 3 C E Package Ordering Code

S12XHY

Abstract: MC9S12XHY256RMV1 MC9S12XHY128 9s12hy
Contextual Info: MC9S12XHY256 Reference Manual Covers MC9S12XHY Family Data Sheet: Advance Information This document contains information on a new product. Specifications and information here in are subject to change without notice. S12 Microcontrollers MC9S12XHY256RMV1 Rev. 1.04

BBY 10

Abstract: VES05991
Contextual Info: BBY 58-02W Silicon Tuning Diode • Excellent linearity • High Q hyperabrupt tuning diode 2 • Low series inductance • Designed for low tuning voltage operation for VCO's in mobile communications equipment 1 • For low frequency control elements VES05991

BFR93AW

Abstract: VSO05561
Contextual Info: BFR93AW NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW

SP6691

Abstract: JUL306 LQH32CN220K21 MBR0530 SP6691EK 4 to 20mA schematic 4FB3
Contextual Info: Solved by Design Solution # 28 TM SP6691 2 Cell Alkaline to 4 WLEDs with IOUT = 20mA Date: June 21, 2006 Designed by: Brian Kennedy Part Number: SP6691EK Application Description: 2 Cell Boost to 13V - 14V out at 20mA Electrical Requirements: Input Voltage

transistor 30054

Abstract: IC 6601 GH 12v 100 amp battery load tester CAPACITOR chip murata mtbf mbr530 lot date code panasonic 0603 resistor 17000E transistor x1 3003 543e GRM1885C1H470JA01B
Contextual Info: Solved by SP6691 TM Micro Power Boost Regulator Series White LED Driver FEATURES • Drives up to 6 LEDs @ 25mA ■ Drives up to 8 LEDs @ 20mA ■ High Output Voltage: Up to 30V ■ Optimized for Single Supply, 2.7V - 4.2V Applications ■ Operates Down to 1V