JSW TRANSISTOR Search Results
JSW TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2SB1008Contextual Info: Is ~ 7 > V $ /T ra n sisto rs 2SB 1008 2SB1008 PNP h> i5;Ji>jSW^]iill iffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • • 1 # - ' ) > W f ^ j i l S l / D i m e n s i o n s U n it : m m ) h > t ^ T - h FET'Æ >5o 2)BEfôlCjfô4kQCD$ÊÎ)t£F*3j&o >Sjf$ |
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2SB1008 O-126 600mA/-1 100mA 2SB1008 | |
ocr4
Abstract: 2SD1762 transistor 2a h
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2SB11Ã 2SD1762tzl 2SD1762. O-220FP ocr4 2SD1762 transistor 2a h | |
Contextual Info: • TqsqgB? ongflbo? q SCS-THOMSON BUR20 Rfflmg^omLioir^oin ! S 6 S-THQMSON 3QE I> HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BUR20 is a silicon multiepitaxial planar NPN |
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BUR20 BUR20 300ns, 10MHz | |
transistor JSW
Abstract: jSw Diode
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MG200Q1US51 transistor JSW jSw Diode | |
transistor JSW
Abstract: diode JSW FL 576-K125
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6DI30M-050 E82988 l95t/R89 Shl50 transistor JSW diode JSW FL 576-K125 | |
Contextual Info: TOSHIBA MG15Q6ES50A m r; 1 = ; n f i F ^ n i TOSHIBA GTR MODULE • ■ Mr SILICON N CHANNEL IGBT la r ta «v v m ■ HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package. |
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MG15Q6ES50A 961001EAA1 TjS125Â | |
TRANSFORMER bck 03
Abstract: transistor JSW 07 OP295
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0P-295/0P-495 OP-295 14-Lead TRANSFORMER bck 03 transistor JSW 07 OP295 | |
jSw DiodeContextual Info: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage |
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MG300Q2YS50 961001EAA1 jSw Diode | |
transistor JSW
Abstract: toshiba srf
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MG200Q2YS50 transistor JSW toshiba srf | |
transistor GY 721
Abstract: transistor JSW LT 723 ic jSw Diode
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MG240V1US41 i00000, transistor GY 721 transistor JSW LT 723 ic jSw Diode | |
Contextual Info: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.) |
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MG200Q2YS50 TjS125Â | |
BA4904A
Abstract: AV011 av033 BA3906
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BA3902 BA3904A BA3906 BA3902, BA3904A, BA3906 SIP-M12 BA3902: BA3904A: BA3906: BA4904A AV011 av033 | |
tc6105
Abstract: 2SK679 BH rn transistor 10285 TC-6105
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2SK679 2SK679Ã TC-6105 tc6105 2SK679 BH rn transistor 10285 | |
ic 7485 4 bit comparator
Abstract: 16 bit comparator using 74*85 IC CD40298 Ic 7485 comparator function table CD45858 transistor JSW
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SCHS091 CD4585B 20-Volt CD45858 ic 7485 4 bit comparator 16 bit comparator using 74*85 IC CD40298 Ic 7485 comparator function table transistor JSW | |
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imperial m015Contextual Info: □ ANALOG DEVICES Dual/Quad Single Supply Operational Amplifiers 0P292/0P492 FEATURES Single Supply Operation: 4.5 V to 33 V Input Common Mode Includes Ground Output Swings to Ground High Slew Rate: 3 V/ jls High Gain Bandwidth: 4 MHz Low Input Offset Voltage |
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0P292/0P492 OP292 14-Lead OP292/OP492 1E-13 37E-13 11E-13 48E-6 53E16 75E-6 imperial m015 | |
AN4001
Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
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AN4001 MRF151A 12MHz, AN4001 laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier | |
transistor JSW
Abstract: SSM2135
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SSM-2135 2000E transistor JSW SSM2135 | |
low noise Microphone Preamplifier
Abstract: SSM2135
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SSM-2135 SSM-2135 SSM2135 low noise Microphone Preamplifier SSM2135 | |
Amplitude Modulation using tractor diode
Abstract: RS1016 PMI PM7528 transistor de audio fp 1016 transistor audio fp 1016 PM-7528 BF253 electret condenser microphone preamplifier professional microphone preamp SSM2135
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SSM2135 SSM-2135 volt75Eâ SSM-2135 2000E 65E-04 Amplitude Modulation using tractor diode RS1016 PMI PM7528 transistor de audio fp 1016 transistor audio fp 1016 PM-7528 BF253 electret condenser microphone preamplifier professional microphone preamp SSM2135 | |
differential electret condenser microphone preamp
Abstract: transistor JSW 12 SSM2135
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SSM2135 SSM-2135 differential electret condenser microphone preamp transistor JSW 12 SSM2135 | |
Contextual Info: r r u TECHNOLOGY n m _ 1A High Voltage, Efficiency i o » Switching Voltage Regulator F€flTUR€S DCSCRIPTIOn • Wide Input Voltage Range: 3V to 75V ■ High Switch Voltage: 100V ■ Low Quiescent Current: 4.5mA ■ Internal 1A Switch ■ Shutdown Mode Draws Only 120pA Supply Current |
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120pA T0-220 LT1072 LT1082 LT1082 T0-22Q | |
transistor JSW 12
Abstract: Sonic Drive SSM2135
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SSM2135 SSM-2135 transistor JSW 12 Sonic Drive SSM2135 | |
Contextual Info: C 2 î ¡992 ANALOG ► DEVICES Low Noise, Low Drift Single-Supply Operational Amplifier OP-213* PIN CONNECTIONS FEATURES Single or Dual Supply Operation Low Noise: 5 n V /V H z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jj.V Very Low Drift: 0.2 nV/°C |
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OP-213* P-213 OP-213. 53E16 OP-213 | |
transistor JSWContextual Info: □ ANALOG DEVICES LowNoise, LowDrift Single-Supply Operational Amplifiers OP-113/0P-213/0P-413* FEATURES Single- or Dual-Supply Operation Low Noise: 4.7 n V /V R z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jjlV Very Low Drift: 0.2 |xV/°C Unity Gain Stable |
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OP-113/0P-213/0P-413* OP-113 53E16 OP113 transistor JSW |