Untitled
Abstract: No abstract text available
Text: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol
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Q62702-A95
Q62702-A113
Q62702-A79
OT-23
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PDF
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marking JSs
Abstract: bas21 DIODE BAS JS v BAS 20 SOT23 Q62702-A113 DIODE BAS JS JSs sot23 Q62702-A79 SOT JPs Q62702-A95
Text: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol
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Original
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Q62702-A95
Q62702-A113
Q62702-A79
OT-23
marking JSs
bas21
DIODE BAS JS v
BAS 20 SOT23
Q62702-A113
DIODE BAS JS
JSs sot23
Q62702-A79
SOT JPs
Q62702-A95
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PDF
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BAS20 SOT23
Abstract: bas21 jss BAS19 BAS20 BAS21
Text: BAS19.BAS21 3 Silicon Switching Diodes High-speed, high-voltage switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking Pin Configuration Package BAS19 JPs 1=A 2 = n.c. 3=C SOT23 BAS20 JRs 1=A 2 = n.c. 3=C SOT23 BAS21 JSs 1=A 2 = n.c. 3=C SOT23 Maximum Ratings
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Original
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BAS19.
BAS21
VPS05161
EHA07002
BAS19
BAS20
BAS20 SOT23
bas21 jss
BAS19
BAS20
BAS21
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diodes BAS 19 . BAS 21 • High-speed, high-voltage switch Type M arking O rdering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Pin C onfigu ratio n Package1) 1 r^ i 3 o-^ 1 -o
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OCR Scan
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Q62702-A95
Q62702-A113
Q62702-A79
OT-23
EHA07002
EHB0CO26
EHB00031
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PDF
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BAS 20 SOT23
Abstract: DIODE BAS 21 sot-23 JSs
Text: BAS 19 . BAS 21 Silicon Switching Diodes 3 High-speed, high-voltage switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking Pin Configuration Package BAS 19 JPs 1=A 2 = n.c. 3=C SOT-23 BAS 20 JRs 1=A 2 = n.c. 3=C SOT-23 BAS 21 JSs 1=A 2 = n.c. 3=C
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Original
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VPS05161
EHA07002
OT-23
EHB00032
Oct-07-1999
BAS 20 SOT23
DIODE BAS 21
sot-23 JSs
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diodes BAS 19 . BAS 21 • High-speed, high-voltage switch T yp e M arking O rdering C o d e tape and reel B A S 19 B A S 20 BAS 21 JPs JR s JSs Q62702-A95 Q62702-A113 Q62702-A79 Pin Configuration P a ck a g e1» 1-^ IsJ-0
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OCR Scan
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Q62702-A95
Q62702-A113
Q62702-A79
OT-23
EH600026
fl0002fl
CHB00031
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PDF
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BAS21 SOD323
Abstract: BAS21 marking JSs JSs sot23 JSs diode jss sc74 bas21 jss BAS21-03W BAS21U SC74
Text: BAS21. Silicon Switching Diode For high-speed switching applications High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single
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Original
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BAS21.
BAS21
BAS21-03W
BAS21U
OD323
BAS21-03W,
BAS21U,
BAS21 SOD323
BAS21
marking JSs
JSs sot23
JSs diode
jss sc74
bas21 jss
BAS21-03W
BAS21U
SC74
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PDF
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marking JSs
Abstract: bas21 BAS21 SOD323
Text: BAS21. Silicon Switching Diode For high-speed switching applications High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single
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Original
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BAS21.
BAS21
BAS21-03W
BAS21U
BAS21
BAS21U
BAS21-03W
OD323
BAS21,
BAS21-03W,
marking JSs
BAS21 SOD323
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PDF
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BAS21 SOD323
Abstract: marking JSs BAS21 BAS21 SOT23 Marking code jSs BAS21U JSs marking code 65 marking sot23 marking code ag BAR63-03W
Text: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage BAS21 BAS21-03W BAS21U $ ! , " # , , ! ! Type Package Configuration Marking BAS21 BAS21-03W BAS21U SOT23 SOD323 SC74 single single parallel triple
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Original
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BAS21.
BAS21
BAS21-03W
BAS21U
OD323
BAS21,
BAS21-03W,
BAS21 SOD323
marking JSs
BAS21
BAS21 SOT23
Marking code jSs
BAS21U
JSs marking code
65 marking sot23
marking code ag
BAR63-03W
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PDF
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BAS21
Abstract: BAS21-03W BAS21U BCW66H E6327 SC74 bas21 infineon DIN6784 BAS21 SOD323 JSs sot23
Text: BAS21. Silicon Switching Diode For high-speed switching applications High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single
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Original
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BAS21.
BAS21
BAS21-03W
BAS21U
OD323
BAS21-03W,
BAS21U,
BAS21
BAS21-03W
BAS21U
BCW66H
E6327
SC74
bas21 infineon
DIN6784
BAS21 SOD323
JSs sot23
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PDF
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TRANSISTOR SMD MARKING CODE JSs
Abstract: smd JSs transistor TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD MARKING CODE pKX smd code pKX smd JSs SMD CODE TRANSISTOR JA smd transistor FY smd transistor marking PA 6 pin TRANSISTOR SMD CODE PA
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device SMD in thin and thick-film circuits with
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OCR Scan
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PMBF170
TRANSISTOR SMD MARKING CODE JSs
smd JSs transistor
TRANSISTOR SMD MARKING CODE DM
TRANSISTOR SMD MARKING CODE pKX
smd code pKX
smd JSs
SMD CODE TRANSISTOR JA
smd transistor FY
smd transistor marking PA
6 pin TRANSISTOR SMD CODE PA
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PDF
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Marking code jSs
Abstract: BAS21 SOD323 BAS21 JSs marking code BAS21 SOT23 bas21 infineon BAS21-03W BAS21U BCW66H SC74
Text: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS21 BAS21-03W BAS21U $ ! , " # , , ! ! Type Package Configuration Marking
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Original
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BAS21.
BAS21
BAS21-03W
BAS21U
OD323
Marking code jSs
BAS21 SOD323
BAS21
JSs marking code
BAS21 SOT23
bas21 infineon
BAS21-03W
BAS21U
BCW66H
SC74
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS21 BAS21-03W BAS21U $ ! " # , , , ! ! Type Package Configuration Marking
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Original
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BAS21.
BAS21
BAS21-03W
BAS21U
OD323
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PDF
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sot-23 Marking LG
Abstract: code 619 sot-23 CMPF4416A transistor marking code lg
Text: Central" CM PF4416A sem iconductor Corp. SILICON N-CHANNEL J F E T DESCRIPTION: The CENTRAL S E M IC O N D U C T O R C M P F 4 4 1 6 A type is an epoxy m olded NChannel Silicon Junction Field Effect Transistor m anufactured in an S O T -2 3 case, designed
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OCR Scan
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CMPF4416A
OT-23
sot-23 Marking LG
code 619 sot-23
transistor marking code lg
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PDF
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transistor 6D sot23
Abstract: No abstract text available
Text: ÌE^b3k7254 M O T O R O L A SC -CXSTRS/R F* 6367254 MOTOROLA SC 96D 8 2 0 0 7 CXSTRS/R F t Symbol Value U nit Drain-Source Voltage Vos 25 Vdc Drain-Gate Voltage Vd g 25 Vdc VGS r) 25 Vdc !G 10 mAdc Symbol Max U nit PD 225 mW 1.8 mW/°C RflJA 556 °C/mW PD
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OCR Scan
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b3k7254
MMBF5457
OT-23
O-236AA/AB)
transistor 6D sot23
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PDF
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JSs sot23
Abstract: No abstract text available
Text: BSS123LT1* M A X IM U M R A TIN G S Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc Gate-Source Voltage - Continuous — Non-repetitive tp « 50 ¿ts vgs V GSM ±20 ±40 Vdc Vpk Rating CASE 318-07, STYLE 21 SOT-23 (TO-236AB) Ade Drain Current Continuous (1)
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OCR Scan
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BSS123LT1*
OT-23
O-236AB)
2N7000
JSs sot23
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PDF
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k72 transistor sot 23
Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
Text: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW
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OCR Scan
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2N7002-01
OT-23,
MIL-STD-202,
OT-23
300ns,
DS30026
2N7002-01
k72 transistor sot 23
transistor marking s72
k72 sot-23
transistor s72
k72 sot 23
k72 transistor
S72 transistor
S72 marking
702 TRANSISTOR sot-23
K72 SOT23
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PDF
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k6z transistor
Abstract: MMBF170 iGSS 100nA Vgs 0v
Text: MMBF170 v isH A Y N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance Low Threshold Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 Min Max -H :h“ A A 0.37 0.51 B 1.19 1.40
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OCR Scan
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MMBF170
OT-23,
MIL-STD-202,
OT-23
DS30104
MMBF170
k6z transistor
iGSS 100nA Vgs 0v
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBF4416LT1* M A X IM U M RATINGS Rating Symbol Value D ra in-Source V oltage Vos 30 V dc Drain-Gate V oltage VOG 30 Vdc G a te-Source V oltage VGS 30 Vdc Ig 10 m Adc Gate Current CASE 318-07, STYLE 10 SOT-23 TO-236AB Unit 3 Jp vP 1 Gat 2 T H E R M A L CH ARACTERISTICS
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OCR Scan
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MMBF4416LT1*
OT-23
O-236AB)
2N5484
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PDF
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hearing aids amplifiers
Abstract: No abstract text available
Text: SST200/200A Vishay Siliconix New Product N-Channel JFETs PRODUCT SUMMARY VGS off 0 0 V(BR}GSS -0 .3 to -0 .9 00 9 is M in (m S ) lo s s 0.25 -2 5 Min (mA) 0.15 FEATURES BENEFITS APPLICATIONS • Low Cutoff Voltage: <0 .9 V • • Mini-Microphones • High Input Im pedance
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OCR Scan
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SST200/200A
S-04028--
04-Jun-01
hearing aids amplifiers
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002K Vishay Siliconix New Product N-Channel 60-V D-S MOSFET TrenchFET MOSFET PRODUCT SUMMARY Vds(V) r DS<on) 60 (Q) Id ( m A ) 2 V gs = 10V ESD Protected 300 2000 V FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • Direct Logic-Level Interface: TTL7CM0S
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OCR Scan
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2N7002K
O-236
OT-23
2N7002
S-02464--Rev.
25-Oct-OO
S-02464--
25-Oct-00
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C FEATURES • High transfer admittance • Low input capacitance • Low feedback capacitance • Low noise. APPLICATIONS • Preamplifiers for AM tuners in car radios.
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OCR Scan
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BF861A;
BF861B;
BF861C
BF861A:
BF861B:
BF861C:
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PDF
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sot23 marking code
Abstract: tp061ok
Text: TP0610K_ Vishay Siliconix New Product P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) ( V ) r DS(on) ( f i ) V GS(»h)(V) lD (mA) -6 0 6 @ V qs = - 1 0 V -1 to -3 .0 -185 ESD Protected 2000 V FEATURES BENEFITS APPLICATIONS
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OCR Scan
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TP0610K_
S-04279--
16-Jul-01
TP0610K
sot23 marking code
tp061ok
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PDF
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Untitled
Abstract: No abstract text available
Text: _ 2N7002E VISHAY Vishay Siliconix N-Channel 60-V MOSFET New Product PRODUCT SUM M ARY V ds V r DS(on) (-2) lD (mA) 60 3 @ VGS = 10 V 250 FEATU R ES B E N E F IT S A P P L IC A T IO N S • • • • • • • • • •
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OCR Scan
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2N7002E
O-236
OT-23)
25-Jan-99
2N7002E_
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PDF
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