GW5820
Abstract: DW5560-0-JSP in4100-0-jsp gn433 GW5820-0-JSP
Text: Loose JSP Taped Fig.1 MKT Series Fig. 2 metallized POLYester FILM capacitor D.C. MULTIPURPOSE APPLICATIONS Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications i.e.:Automotive PRODUCT CODE: JSP
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GW5820
Abstract: DW6390 GW5330-0-JSP GN5120 IN4470-0-JSP IR4820
Text: Loose JSP Taped Fig.1 MKT Series Fig. 2 mEtaLLizEd POLYEstEr FILM capacitor D.C. MULTIPURPOSE APPLICATIONS Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications i.e.:Automotive PRODUCT CODE: JSP
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MKP 1.44/A
Abstract: MKP 1.44/A capacitor MN4680-A-JSP
Text: Loose JSP Taped Fig.1 MKP Series Fig. 2 mEtaLLizEd POLYPROPYLENE FILM capacitor D.C. AND PULSE APPLICATIONS Typical applications: Automotive and Industrial applications Capacitor for DC-DC converter, inverter and supply High Capacitance per volume PRODUCT CODE: JSP
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GW5820
Abstract: MW5150 jsp marking DW6120-0-JSP MN4220 EN5120-0-JSP IN4100 MN4220-0-JSP ir5100 IR5180
Text: Loose JSP MKT Series Taped Fig. 2 Fig.1 METALLIZED POLYESTER FILM CAPACITOR D.C. MULTIPURPOSE APPLICATIONS Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications i.e.:Automotive PRODUCT CODE: JSP
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GW5820
Abstract: ER5470 IR4330-0-JSP DW5560-0-JSP GW-58 MN4150-0-JSP DW6120-0-JSP IR4330
Text: Loose JSP Taped Fig.1 MKT Series Fig. 2 metallized POLYester FILM capacitor D.C. MULTIPURPOSE APPLICATIONS Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications i.e.:Automotive PRODUCT CODE: JSP
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63Vdc
40Vac
160Vdc
90Vac
100Vdc
63Vac
GW5820
ER5470
IR4330-0-JSP
DW5560-0-JSP
GW-58
MN4150-0-JSP
DW6120-0-JSP
IR4330
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IR512
Abstract: ir5100 IR433 20E-3 IR5100-A-JSP MKP 1.44/A capacitor
Text: Loose JSP Taped Fig.1 MKP Series Fig. 2 metallized POLYPROPYLENE FILM capacitor D.C. AND PULSE APPLICATIONS Typical applications: Automotive and Industrial applications Capacitor for DC-DC converter, inverter and supply High Capacitance per volume PRODUCT CODE: JSP
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IN4100
Abstract: capacitor polyester pme IR510 IR433 IR4270-0-JSP in4150 ir5100 IR4220 IR4470-0-JSP IR4390
Text: T ER D N U Loose EN M P O VEL JSP DE MKT Series METALLIZED POLYESTER FILM CAPACITOR D.C. MULTIPURPOSE APPLICATIONS Typical applications: blocking, coupling, decoupling, bypassing, interference suppression in low voltage applications i. e. Automotive Fig. 1
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IR510
Abstract: mn4560 IR4330-A-JSP PME 400 IR4390-A-JSP MR4270-A-JSP PR4220-A-JSP IN456 PN4100-A-JSP MR5120-A-JSP
Text: T ER UND Loose EN M P O VEL JSP DE MKP Series METALLIZED POLYPROPYLENE FILM CAPACITOR D.C. AND PULSE APPLICATIONS Typical applications: blocking, coupling, decoupling, bypassing, interference suppression in low voltage applications i. e. Automotive Fig. 1
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smd diode a7
Abstract: smd jsp SMD a7 S BAV99 SOT 23 smd diode marking A7 SOT-23 JSP SMD JSp SOT23 bav99 sot-23 smd transistor A7 Diode BAV99 SOT23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED SWITCHING DIODES 3 BAV99 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ 2 1 CATHODE Marking BAV99 = A7 High-Speed Switching Series Diode Pair
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BAV99
OT-23
C-120
200310E
smd diode a7
smd jsp
SMD a7 S
BAV99 SOT 23
smd diode marking A7 SOT-23
JSP SMD
JSp SOT23
bav99 sot-23
smd transistor A7
Diode BAV99 SOT23
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smd diode a7
Abstract: jsp sot-23 marking
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED SWITCHING DIODES 3 BAV99 SOT-23 Formed SMD Package Pin Configurat ion 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE 2 1 Marking BAV99 = A7 High-Speed Switching Series Diode Pair
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BAV99
OT-23
C-120
200310E
smd diode a7
jsp sot-23 marking
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Untitled
Abstract: No abstract text available
Text: 2N2944AUB – 2N2946AUB PNP Silicon Small Signal Transistor Available on commercial versions Qualified per MIL-PRF-19500/382 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N2944AUB through 2N2946AUB PNP silicon transistor device is military qualified up to
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2N2944AUB
2N2946AUB
MIL-PRF-19500/382
2N2944AUB
2N2946AUB
2N2944A
2N2946A
MIL-PRF-19500/382s
T4-LDS-0236-1,
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introduction to power semiconductors
Abstract: MCR08BT1 APPCHP1
Text: DISCRETE SEMICONDUCTORS DATA SHEET MCR08BT1 Thyristor logic level Product specification July 2001 Philips Semiconductors Product specification Thyristor logic level MCR08BT1 GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated, sensitive gate thyristor in a plastic
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MCR08BT1
MCR08BT1
01-Oct-97)
introduction to power semiconductors
APPCHP1
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TRANSISTOR SMD MARKING CODE s7
Abstract: marking code G7 SMD Transistor g3 smd transistor SMD Transistor G6 SMD Transistor Marking Code S7 g3 smd transistor view TRANSISTOR SMD MARKING CODE GFs fet diode date sheet FET MARKING CODE s5 smd transistor g3
Text: Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor array FEATURES PHN70308 SYMBOL • 30 mΩ isolation transistor • 80 mΩ spindle transistors • TrenchMOS technology • Logic level compatible • Surface mount package
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PHN70308
PHN70308
OT341
TRANSISTOR SMD MARKING CODE s7
marking code G7 SMD Transistor
g3 smd transistor
SMD Transistor G6
SMD Transistor Marking Code S7
g3 smd transistor view
TRANSISTOR SMD MARKING CODE GFs
fet diode date sheet
FET MARKING CODE s5
smd transistor g3
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Zener diode smd marking sot223
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy
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BUK7880-55
OT223
BUK7880-55
BUK788055
OT223
Zener diode smd marking sot223
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MSA435
Abstract: PMLL4148 PMLL4148L PMLL4448 MSA461
Text: PMLL4148L; PMLL4448 High-speed switching diodes Rev. 06 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages.
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PMLL4148L;
PMLL4448
OD80C
PMLL4148L
OD80C
MSA435
PMLL4148
PMLL4148L
PMLL4448
MSA461
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MSA435
Abstract: BAS32L
Text: BAS32L High-speed switching diode Rev. 04 — 22 March 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C SMD package.
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BAS32L
OD80C
MSA435
BAS32L
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Untitled
Abstract: No abstract text available
Text: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary RDS ON ID TA = +25°C • Low On-Resistance Low Input Capacitance 1.8 @ VGS = 10V 500mA Fast Switching Speed 2.0 @ VGS = 4.5V 450mA Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
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BSN20
500mA
450mA
AEC-Q101
DS31898
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BAS21H
Abstract: MARKING JSp
Text: BAS21H Single high-voltage switching diode Rev. 02 — 3 November Product data sheet 1. Product profile 1.1 General description Single high-voltage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device SMD plastic package.
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BAS21H
OD123F
BAS21H
MARKING JSp
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TRANSISTOR SMD MARKING CODE pa
Abstract: Zener diode smd marking sot223 smd TRANSISTOR code marking bu
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has
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BUK98150-55
OT223
BUK98150-55
/\\Roarer\root\data13\imaging\BITTING\cpl
mismatch\20000819\08.
\BUK98150-55
TRANSISTOR SMD MARKING CODE pa
Zener diode smd marking sot223
smd TRANSISTOR code marking bu
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Untitled
Abstract: No abstract text available
Text: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XP
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV90EN
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Productspecification BAS19; BAS20; BAS21 General purpose diodes FEATURES • Small plastic SMD package • Switching speed: max. 50 ns MARKING PINNING MARKING CODE TYPE NUMBER PIN 1 DESCRIPTION anode • General application BAS19 JPp
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BAS19;
BAS20;
BAS21
BAS19
BAS20
BAS19,
BAS20,
BAS21
plastBAS19;
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smd jsp
Abstract: jpP marking code jsp marking BAS19 BAS20 BAS21 BAS21 on JPp smd marking code SOT23
Text: Philips Semiconductors Product specification General purpose diodes FEATURES • Small plastic SMD package • Switching speed: max. 50 ns BAS19; BAS20; BAS21 MARKING PINNING MARKING CODE TYPE NUMBER PIN DESCRIPTION 1 anode • General application BAS19 JPp
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BAS19;
BAS20;
BAS21
BAS19,
BAS20,
BAS21
BAS20
711062b
smd jsp
jpP marking code
jsp marking
BAS19
BAS21 on
JPp smd marking code SOT23
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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