U125D
Abstract: c5856 T1-6TCUP U12B SMA200UP C71B RC0603 U740 AD9861 CC0805
Text: 4 3 1 2 REVISIONS D DVIN1 TB3 L9 1 TP23 RED JP4 LC0805 DRVDD BCASE TB3 VAL C11 DNP 16V BCASE C12 10UF 10V CC0805 C20 B Revision of pluto64dual Rev A. 0306.04 DATE APPROVED JRM C alter component package JP50, C43. misc labeling. spread J11,J12 0308.18 JRM D
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LC0805
CC0805
pluto64dual
RC0805
U125D
c5856
T1-6TCUP
U12B
SMA200UP
C71B
RC0603
U740
AD9861
CC0805
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DA12 16
Abstract: SK1N1 T1-1TCUP RX433 n1 sot23 SDA04HOSK RC0603 Hp TX2 SOT23 2A8 SOT23-BEC
Text: 4 3 1 2 REVISIONS JP9 DVDD JP15 RXEN_SYNC JP14 D REV DESCRIPTION DATE APPROVED B Customer Version NO Socket 0307.09 JRM D JP58 AWG_RXTXEN 1 TX0 2 RX5 3 RX4 4 RX3 1 DVDD RX2 2 AWG_TXSYNC RX1 3 DSP_RXTXEN RX0 4 10K R16 RC0603 10K R8 RC0603 R9 33 RC0603 JP1 JP2
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RC0603
NC7SZ125M5
DA12 16
SK1N1
T1-1TCUP
RX433
n1 sot23
SDA04HOSK
RC0603
Hp TX2
SOT23 2A8
SOT23-BEC
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Thermostatic Probes
Abstract: Probes Microtherm switch r20 10 MICROTHERM R20 Microtherm, R20 Microtherm THERMAL SWITCH microtherm b12 MICROTHERM 180C Microtherm Microtherm switch
Text: THERMOSTATIC PROBES THERMOSTATIC PROBES WATER JACKET TYPE Cantherm probe thermostats use bi-metallic thermal switches encased in a housing made of brass or stainless steel suitable for installation in a vessel having a NPT threaded sleeve. The thermostatic
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BPT46-04
BPT38-06
BPT50-08
BPT50-08
2009/May
CT-M-ENG-01T-1
Thermostatic Probes
Probes
Microtherm switch r20 10
MICROTHERM R20
Microtherm, R20
Microtherm THERMAL SWITCH
microtherm b12
MICROTHERM 180C
Microtherm
Microtherm switch
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WAB170
Abstract: 24-240VAC
Text: J SERIES INDUSTRIAL PHOTOSENSORS • Multivoltage 2 4 -2 4 0 VAC/DC relay type • Polarized filter on JRM retro-reflective model prevents false triggering • Narrow profile (36 mm deep) • Base including terminals remains in place when changing the sensor
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JT10R
JNT10R
JNR05
JT10RF
JR07F
WAB170
24-240VAC/DC
24-240VAC
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jrm 45
Abstract: No abstract text available
Text: REV. B MATERIAL AND DESCRIPTION SEE ECO G M - 10790 DATE BY 1 1 /2 4 /9 9 JRM FINISH JACK HOUSING: CRES 3 0 3 PER ASTM A 4 8 4 AND ASTM A 5 8 2 OR ASTM A 5 5 5 AND ASTM A 581. GOLD PLATE PER MIL—G—4 5 2 0 4 SOCKET CONTACT: BERYLLIUM COPPER PER ASTM B 196 A N D /O R ASTM B 197.
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022 JRC
Abstract: JRC 022 74221 74423 ctct
Text: — 230 — 74423 Dual R e trig g e ra b le S ingle S h o t to td CCfe zB ía. i2j^nininininiriLf •A I 1 IQ 20 2 Jrm/ GMO ?a m OA, B í O X * * f t * I HS;3C LT v^ ¿ è CLR t mm H i z i x i v otw= 0.45RT.CT f 5 k S < R l < 2 6 0 k ^ \ lOOOpFäCr RCTRIQGER PULSE
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260kQ\
45Rt-Ct
022 JRC
JRC 022
74221
74423
ctct
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2sk1603
Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Text: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378
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2SJ115
2SJ123
2SJ126
2SJ147
2SJ183
2SJ200
2SJ201
2SJ224
2SJ238
2SJ239
2sk1603
2SK2236
2SK1723
2SK2222
2sk538
2SK180S
2SK584
2SK1882
2SK1513
2sk1915
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PDF
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21DQ02L
Abstract: ir812
Text: SCHOTTKY BARRIER DIODE 21DQ02L 1.9A/20V FEATURES ° Miniature Size ° Extremely Low Forward Voltage Drop ? Low Power Loss, High Efficiency 0 High Surge Capability ° 20 Volts thru 100 Volts Types Available 0 52mm Inside Tape Spacing Package Available Approx. Net Weight: 0.38 Grams
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A/20V
21DQ02L
bbl5123
21DQ02L
ir812
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PDF
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gilbert engineering
Abstract: No abstract text available
Text: Ib is drawing and any data contained therein Is the property of Gilbert Engineering Co., Inc., and constitutes and contains proprietary and confidential information. Neither receipt nor possession of this drawing confers or transfers any right to duplicate, use, or disclose any Information contained herein
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jrm 45
Abstract: jrm A 45 DIODE 1B 1b005 diode 60 31 1B01S 1B02S 1B04S
Text: International I ö R Rectifier Bridges Fax on Case Demand Outline Number Key I fsm Part Number VRRM lo @ T C V (A) W Vfm (V) (A) 50 Hi (A) tOHz (AJ R »< ' l * {mW Notes Single Phase Diode D- 71 A vaila b le in E l 50 1 40 30 31 60 5 6 7 15 1B01S 100 1
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1B01S
1B02S
1B04S
1B005
1KAB05H
fKAB10E
1KAB10EL3
jrm 45
jrm A 45
DIODE 1B
diode 60 31
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PDF
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K1188
Abstract: MIL-R-83248
Text: REV. C M ATERIA L AND DATE BY 5 /1 1 /9 9 CGA DESCRIPTION SEE ECO GM— 9730 FINISH HOUSING: CRES 303 PER ASTM A 484 AND ASTM A 582 OR ASTM A 555 AND ASTM A 581. PASSIVATE PER M I L - F - 14072 E300. PIN CONTACT: BERYLLIUM COPPER PER ASTM B 196 AND/OR ASTM B 197.
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00219-142-3-V10
K1188
MIL-R-83248
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Untitled
Abstract: No abstract text available
Text: 1 .6 /5 .6 - DIN 47 295 75 f i CABLE CLAMP TYPE COMNECTORS screw-on or slide-on S TR A IG H T BULK HEAD JACKS (front fixing) .1 2 6 (3 .2 ) m a x p a n e l t h ic k n e s s CABLE ,1 O 2 D (0 2 .6 )7 5 n PA R T NO. R 129 301 215 Assembly code M 16 S TR A IG H T BULK HEAD JACKS (front fixing)
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Untitled
Abstract: No abstract text available
Text: 25 Amp Single Phase Bridge Rectifiers SPA25 to SPD25 Dim. Inches M illim eter Minimum 1. 2. 3. 4. 5. C1 C2 C3 C4 0D1 0D2 0D3 0D4 0D5 H1 H2 H3 H4 L1 L2 L3 L4 L5 W Terminals are hot tin dipped or silver plated. Polarity shall be marked on terminal side of device.
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SPA25
SPD25
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spb25 jan
Abstract: No abstract text available
Text: Bridge Rectifiers JAN SPD25 Dim. Inches M illim eter Minimum 1. 2. 3. 4. 5. C1 C2 C3 C4 0D1 0D2 0D3 0D4 0D5 H1 H2 H3 H4 L1 L2 L3 L4 L5 W Terminals are hot tin dipped or silver plated. Polarity shall be marked on terminal side of device. Point at which C is read must be in metal part of case
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SPD25
spb25 jan
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PDF
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LB7374
Abstract: No abstract text available
Text: LB7374 Laser Diode Module Description The LB7374 is a single longitudinal mode laser diode module. Features • 1.55 pm multi-quantum well MQW DFB laser diode with marrow spectral line width • High speed modulation (up to 2.5Gb/s) • Long distance transmission with no external modu
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LB7374
LB7374
14-pin
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Untitled
Abstract: No abstract text available
Text: Y G 9 0 2 C 3 ioa g; _ LOW LOSS SUPER HIGH SPEED RECTIFIER : Features Insulated package by fully m o ld in g . • i£Vp Low V F m m m m Connection Diagram Super high speed sw itchin g. • 7 u -* — H igh.reliability by planer design,
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YG902C3
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PDF
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11EQS05
Abstract: 11EQS06
Text: SCHOTTKY BARRIER DIODE i.ia / 50~ 60v iieq so s iieq sos FEATURES 2.7 .106 nTA MAX U1A • Miniature Size - 0 ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0.60(.024)d ia 0.54(.021) ° High Surge Capability ° 20 Volts thru 100 Volts Types Available
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11EQS05
11EQS06
11EQS05
U1EQS06)
UEQS05
Q0017b2
11EQS06
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PDF
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FST10125
Abstract: No abstract text available
Text: D im . Inches M illim e te r M inim um M ax im u m Detail 6 -r Detail B MicrosemI Catalog Number FST10125* FST10130* FST10135* FST10140* FST10145* I Baseplate; Nickel plated copper; A C E F G H J K L M N P 1.995 0.495 0.990 2.390 1.490 0.120 M inim um 2.005
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C-192
C-193
FST10125
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PDF
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Untitled
Abstract: No abstract text available
Text: I DR AW IN G M ADE IN TH IR D ANGLE PRO JECTIO N T H « e P W A W IN G I Q U N P U D L I O M E P . C o p y rig h t 1 9 7 / RESERVED. A M P | by PR O D U C TS R E LE A SED A M P FO R MAY B E C O V E R E D BY U . S . / = ~ t¿ / S T JAAJUAjTY Z 7 P U B L IC A T IO N
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C8/-738
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PDF
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Untitled
Abstract: No abstract text available
Text: 25 Amp Single Phase Bridge Rectifiers SPA25 to SPD25 Dim. Inches Millim eter Minimum 1. 2. 3. 4. 5. C1 C2 C3 C4 0D1 0D2 0D3 0D4 0D5 H1 H2 H3 H4 L1 L2 L3 L4 L5 W Terminals are hot tin dipped or silver plated. Polarity shall be marked on terminal side of device.
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SPA25
SPD25
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PDF
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F103M
Abstract: No abstract text available
Text: YTF633 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jr-M O Sn HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR Unit in urn DRIVE APPLICATIONS. 10.3MAK. f- ¿3.610.2 FEATURES: •Low Drain-Source ON Resistance :
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YTF633
10xts
-100A/ps
F103M
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PDF
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Untitled
Abstract: No abstract text available
Text: 25 Amp Three Phase Bridge Rectifiers 4 8 3 -1 to 4 8 3 - 3 —E - METAL CASE ^ Dim. Inches F 1— G DIA. 2-PLCS. A A , 2 -Æ l1 î Ii I I ~ I I *3 ( 5 N i A B " c V D1 D2 E F ENCAPSULATION s 1— G H J K L1 L2 L3 M N P R S T SEE NOTE 3 Notes: 1. Terminals are tinned.
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YTFP453
Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600
Text: FIELD EFFECT TRANSISTOR YTFP453 SILICON N CHANNEL MOS TYPE jr-M O S n HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER ANO HOTOR Unit in aa 1&9MAX. DRIVE APPLICATIONS. 0 3 .2 ± a s ¿ & Æ FEATURES:
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YTFP453
10jus
-100A/W
YTFP453
Field Effect Transistor Silicon N Channel MOS vdss 600
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PDF
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Untitled
Abstract: No abstract text available
Text: DEFINITIONS AND TYPE CODES SUHNER Part Number 11 BNC-I 50-3-4/XYZ HM3) Extension code ([4; Plating extension, [5] Packing code) Plating code (X-cenfer contact, Y-outer contact, Z-housing or other metal parts) ; - Type variation (continuous) Cable dielectric size, rounded to the nearest mm
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50-3-4/XYZ
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