JFET SICED Search Results

JFET SICED Result Highlights (5)

Part	Manufacturer	Description
ISL28210FBZ-T13	Renesas Electronics Corporation	Precision Low Noise JFET Operational Amplifiers
ISL28210FBZ-T7A	Renesas Electronics Corporation	Precision Low Noise JFET Operational Amplifiers
ISL28210FBZ	Renesas Electronics Corporation	Precision Low Noise JFET Operational Amplifiers
ISL28110FBZ-T7A	Renesas Electronics Corporation	Precision Low Noise JFET Operational Amplifiers
ISL28110FBZ	Renesas Electronics Corporation	Precision Low Noise JFET Operational Amplifiers

JFET SICED Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
JFET siced Abstract: SiC-JFET siced SiC jfet cascode SiC JFET cascode mosfet switching SiC-JFET* JFET siced SiC-JFET comparison modern power device concepts high normally off SiC-JFET cascode mosfet switching thermal perfomance SiC IGBT IGBT THEORY AND APPLICATIONS Text: A comparison of modern power device concepts for high voltage applications: Field stop-IGBT, compensation devices and SiC devices G. Deboy, H. Hüsken, H. Mitlehner* and R. Rupp Infineon AG, P.O. Box 80 09 49, 81609 Munich, Germany *SICED Electronics Development, Paul-Gossenstr. 100, 91052 Erlangen, Germany	Original		PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

JFET siced

Abstract: SiC-JFET siced SiC jfet cascode SiC JFET cascode mosfet switching SiC-JFET* JFET siced SiC-JFET comparison modern power device concepts high normally off SiC-JFET cascode mosfet switching thermal perfomance SiC IGBT IGBT THEORY AND APPLICATIONS
Text: A comparison of modern power device concepts for high voltage applications: Field stop-IGBT, compensation devices and SiC devices G. Deboy, H. Hüsken, H. Mitlehner* and R. Rupp Infineon AG, P.O. Box 80 09 49, 81609 Munich, Germany *SICED Electronics Development, Paul-Gossenstr. 100, 91052 Erlangen, Germany

Original

PDF