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    JFET SEMISOUTH SEMISOUTH, SJDP120R085 Search Results

    JFET SEMISOUTH SEMISOUTH, SJDP120R085 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DG191AP/B Rochester Electronics LLC DG191 - Dual SPDT, High-Speed Drivers with JFET Switch Visit Rochester Electronics LLC Buy
    DG182AP/B Rochester Electronics DG182 - Dual SPST, High-Speed Drivers with JFET Switch Visit Rochester Electronics Buy
    ISL28210FBZ-T13 Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation
    ISL28210FBZ-T7A Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation
    ISL28210FBZ Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation

    JFET SEMISOUTH SEMISOUTH, SJDP120R085 Datasheets Context Search

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    SJDP120R085

    Abstract: SEMISOUTH sjdp120 SJDP silicon carbide JFET JFET semisouth JFET semisouth Semisouth, SJDP120R085 silicon carbide j-fet silicon carbide sjdp120r
    Text: Silicon Carbide PRELIMINARY SJDP120R085 Product Summary Normally-On Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C


    Original     		PDF SJDP120R085 O-247 SJDP120R085 SEMISOUTH sjdp120 SJDP silicon carbide JFET JFET semisouth JFET semisouth Semisouth, SJDP120R085 silicon carbide j-fet silicon carbide sjdp120r

    SEMISOUTH

    Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
    Text: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


    Original     		PDF ASJD1200R085 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R085 O-247 ASJD1200R085 SEMISOUTH JFET semisouth SiC JFET semisouth JFET

    ASJD1200R085

    Abstract: SiC JFET SJDP120R085 JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085
    Text: ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


    Original     		PDF ASJD1200R085 O-258 260oC MIL-PRF-19500 MIL-STD-750 O-258 SJDP120R085 O-247 ASJD1200R085 SiC JFET JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085