ZD 103 ma
Abstract: LT/SG3527A op292g AD8436
Text: 3 75 90 98 190 0.1 0.001 10 5 H 3 5 67 85 98 190 0.1 0.001 10 5 H • • 1 0.095 0.013 2.5 2 90 100 105 45 0.015 0.020 10 45 H • • 1 5 2.7 6 4 60 65 113 22 0.05 0.550 30 20 H S S • • 1 3 5 25 20 38 45 83 45 0.05 0.700 50 2501 I S S PDIP5 <6 1 0.004
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AD8534
SC705
OT-235
ST07377-
ZD 103 ma
LT/SG3527A
op292g
AD8436
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MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
LL914
LL4150,
MMBD2104
Transistor NEC 05F
hp2835 diode
ZENER DIODE t2d
what is the equivalent of ZTX 458 transistor
MMBD2103
T2D DIODE 3w
T2D 8N
2n2222 as equivalent for bfr96
mmbf4932
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PDF
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zmd31015
Abstract: No abstract text available
Text: ZMD31015 RBicdLiteTM Low-Cost Sensor Signal Conditioner with Diagnostics Datasheet PRELIMINARY Features • • • • • • • • • • • • • • • • • Digital compensation of sensor offset, sensitivity, temperature drift and non-linearity
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ZMD31015
24-bit
compensat37
zmd31015
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Untitled
Abstract: No abstract text available
Text: ZMD31010 RBicLiteTM Low-Cost Sensor Signal Conditioner Datasheet Features Benefits • Digital compensation of sensor offset, sensitivity, temperature drift and non-linearity • Accommodates differential sensor signal spans from 1.2mV/V to 60mV/V • ZACwireTM one-wire interface.
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ZMD31010
60mV/V
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PDF
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Untitled
Abstract: No abstract text available
Text: ZMD31010 RBicLiteTM Low-Cost Sensor Signal Conditioner Datasheet Features Benefits • Digital compensation of sensor offset, sensitivity, temperature drift and non-linearity • Accommodates differential sensor signal spans from 1.2mV/V to 60mV/V • ZACwireTM one-wire interface.
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ZMD31010
60mV/V
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PDF
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ZACwire
Abstract: No abstract text available
Text: ZMD31010 RBicLiteTM Low-Cost Sensor Signal Conditioner Datasheet Features Benefits • Digital compensation of sensor offset, sensitivity, temperature drift and non-linearity • Accommodates differential sensor signal spans from 1.2mV/V to 60mV/V • ZACwireTM one-wire interface.
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ZMD31010
60mV/V
ZACwire
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PDF
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MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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Original
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
MMBD2103
ZENER DIODE t2d
MMBD2101
MMBD2102
MMBD2104
SMD codes
bc107 TRANSISTOR SMD CODE PACKAGE SOT23
Transistor NEC 05F
BAT15-115S
NDS358N
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PDF
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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Original
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
SMD Codes
TRANSISTOR SMD T1P
MMBD2104
BAW92
smd transistor A6a
schottky diode s6 81A
a4s smd transistor
Transistor SMD a7s
transistor SMD P2F
MMBD2101
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PDF
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Untitled
Abstract: No abstract text available
Text: ZMD31010 RBicLiteTM Low-Cost Sensor Signal Conditioner Datasheet Features Benefits • Digital compensation of sensor offset, sensitivity, temperature drift and non-linearity • Accommodates differential sensor signal spans from 1.2mV/V to 60mV/V • ZACwireTM one-wire interface.
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Original
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ZMD31010
60mV/V
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PDF
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ZMD31010
Abstract: 5-30V 800H J107 MMBF4392 ZACwire ZMDA
Text: ZMD31010 RBicLiteTM Low-cost Sensor Signal Conditioner PRELIMINARY Datasheet Features Brief Description • The RBicLiteTM is a CMOS integrated circuit for highlyaccurate amplification and sensor-specific correction of bridge sensor signals. Digital compensation of
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ZMD31010
ZMD31010
5-30V
800H
J107
MMBF4392
ZACwire
ZMDA
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PDF
|
Untitled
Abstract: No abstract text available
Text: ZMD31010 RBicLiteTM Low-Cost Sensor Signal Conditioner Datasheet Features Benefits • Digital compensation of sensor offset, sensitivity, temperature drift and non-linearity • Accommodates differential sensor signal spans from 1.2mV/V to 60mV/V • ZACwireTM one-wire interface.
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Original
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ZMD31010
60mV/V
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PDF
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Untitled
Abstract: No abstract text available
Text: W IH 401A H A R R IS S E M I C O N D U C T O R QUAD Varafet Analog Switch GENERAL DESCRIPTION FEATURES The IH401A is made up of 4 monolithically constructed combinations of a varactor type diode and an N-channel JFET. The JFET itself is very similar to the popular 2N4391,
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OCR Scan
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IH401A
2N4391,
IH6201
IH401A
IH620I
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PDF
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dual spst JFET
Abstract: No abstract text available
Text: IH401A HARRIS S E M I C O N D U C T O R QUAD Varafet Analog Switch GENERAL DESCRIPTION FEATURES The IH401A is made up of 4 monolithically constructed combinations of a varactor type diode and an N-channel JFET. The JFET itself is very similar to the popular 2N4391,
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OCR Scan
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IH401A
2N4391,
IH6201
IH401A
dual spst JFET
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PDF
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U403
Abstract: U402 U401 U404 U406
Text: U 401-U 406 Monolithic Dual N-Channel JFET FEATURES • Minimum System Error and Calibration — 5mV Offset Maximum U401 , 95dB Minimum CMRR (U401-04) • Low Drift with Temperature — 10mV/°C Maximum (401, 02) • Operates from Low Power Supply Voltages —
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OCR Scan
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U401-U406
U401-04)
10mV/Â
500Kil
200/iA
200/1A
300fis,
U403
U402
U401
U404
U406
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PDF
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|
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STR G 6351
Abstract: str 6351 000E-12 10747B TLE2161
Text: TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE iiPOWER OPERATIONAL AMPLIFIERS SLOSD49D - NOVEMBER 1989 - REVISED MAY 1996 • Wide Operating Supply Voltage Range VC C ± = ± 3 . 5 V t o ± 1 8 V Excellent Output Drive Capability V0 = ± 2.5 V Min at RL = 100 a
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OCR Scan
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TLE2161,
TLE2161A,
TLE2161B
SLOSD49D
TLE2161
ILil724
STR G 6351
str 6351
000E-12
10747B
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PDF
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MOS 4016
Abstract: T4016B T40-16B
Text: A dvanced P ow er Te c h n o l o g y A P 400 ' 4016 T B V R 27A 0 160 2 V . Í POWER MOS V Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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OCR Scan
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O-247
APT4016BVR
MIL-STD-75Q
O-247AD
MOS 4016
T4016B
T40-16B
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PDF
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Untitled
Abstract: No abstract text available
Text: Tem ic SST/U401 Series S e m i c o n d u c t o r s Monolithic N-Channel JFET Duals SST404 SST406 U401 U404 U406 Product Summary Part Number ^GS oft (V) U 401 - 0 .5 t o - 2 .5 -4 0 1 -2 5 S S T /U 4 0 4 - 0 .5 to " 2 .5 -40 I -2 15 S S T /U 4 0 6 - 0 .5 t o - 2 .5
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OCR Scan
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SST/U401
SST404
SST406
102dB
S-52424--
14-Apr-97
|
PDF
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U401
Abstract: D0808 sst406
Text: T e m ic SST/U401 Series Siliconix Monolithic N-Channel JFET Duals SST404 SST406 U401 U404 U406 Product Summary |VGs i — V q s 2 M a x m V P a rt N um ber v GS(ofl) (V) V (BR)GSS M in (V) gfs M in (m S ) i G i y p (pA ) U401 - 0 .5 to - 2 .5 -4 0 1 -2
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OCR Scan
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SST/U401
SST404
SST406
SST/U404
SST/U406
AN106,
P-37947--
U401
D0808
|
PDF
|
transistor U402
Abstract: U402 U401 U401-6 U403 U404 U405 U406
Text: calodic Dual N-Channel JFET Switch CORPORATION U401-U406 A B S O L U T E M A X IM U M R A T IN G S T a = 2 5 °C u nle ss o th e rw ise specified F E A TU R E S • • • • M in im u m S ys te m E rror and C alibration Lo w D rift W ith Tem p e ra tu re
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OCR Scan
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U401-U406
10sec)
300mW
500mW
200jiA
200jlA
300ps;
1A44322
transistor U402
U402
U401
U401-6
U403
U404
U405
U406
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PDF
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Untitled
Abstract: No abstract text available
Text: Dual N-Channel JFET Switch calocflc CORPORATION \J U401-U406 A B S O L U T E M A X IM U M R A T IN G S T a = 2 5 °C unle ss o th e rw ise specifie d F E A TU R E S • • • • M in im u m S y s te m Erro r an d C alib ra tio n Lo w D rift W ith Tem p e ra tu re
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OCR Scan
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U401-U406
200nA
300jas;
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PDF
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Untitled
Abstract: No abstract text available
Text: ALA400/401 LINEAR ARRAY Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology offers the advantage of
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OCR Scan
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ALA400/401
ALA400/401
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PDF
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Untitled
Abstract: No abstract text available
Text: * AT&T Preliminary Data Sheet ALA400/401 Linear Array Family Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology
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OCR Scan
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ALA400/401
51AL230240
D-8000
DS87-61LBC
|
PDF
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pnp 8 transistor array
Abstract: ALA400 transistor BIPOLAR npn 8 transistor array 1000 volt pnp transistor JFET 401 ARRAY resistor DS87-61LBC kss 216 complementary JFET
Text: AT&T Preliminary Data Sheet ALA400/401 Linear Array Fam ily Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology
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OCR Scan
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ALA400/401
51AL230240
D-8000
DS87-61LBC
pnp 8 transistor array
ALA400
transistor BIPOLAR
npn 8 transistor array
1000 volt pnp transistor
JFET 401
ARRAY resistor
DS87-61LBC
kss 216
complementary JFET
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PDF
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siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility
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OCR Scan
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J-23548
K24123
i39-40i
NZ3766
53-C-03
siliconix fet
Transistor E112 FET N-Channel
JFET TRANSISTOR REPLACEMENT GUIDE j201
E112 jfet
jfet bfw10 terminals
JFET BFW10 SPECIFICATIONS
4856a mosfet
Transistor E112 FET
FETs in Balanced Mixers Ed Oxner
equivalent components FET BFW10
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PDF
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