JESD97 Search Results

A2ND

Contextual Info: JEDEC STANDARD Marking, Symbols, and Labels for Identification of Lead Pb Free Assemblies, Components, and Devices JESD97 MAY 2004 JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and

VUI72-16NO1

Abstract: VUI72 vui72-16 JESD97 VUM25-05E vui7216no1 VUI72-16N VUI72-1 JESD-97 D-68623
Contextual Info: Product Change Notice PCN No.: 01/05 Customer: all IXYS product type: Package: V1-Pack Description of change: Conversion of the pin hot dip plating from PbSn to Pb-free SnAg3Cu0.5 (e1, JESD97) without undercoat Reason for change: RoHS directive 2002/95/EC

JESD097

Abstract: JESD97 JEDEC J-STD-020 hpc capacitor HPC0402B0R5AGMT1
Contextual Info: Statement of RoHS Compliance/Lead-free Status REFERENCE: RoHS, Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment, JEDEC STD 097, JESD97, dated May 2004 Moisture/Reflow Sensitivity Classification…., JEDEC J-STD 020

JESD97

Abstract: ILCX15 i321 ILCX09 ILCX17 ISM72 diode i321 i203 transistor IL3S HC49USM
Contextual Info: ILSI America 5458 Louie Lane Reno, NV 89511 775-851-8880 12/14/2006 Pb Free Road Map ILSI America Part Number Series Pb Free Status RoHS Compliance Note Date code of conversion to Pb Free MSL JESD97 HC49USM HC49USM2 HC49USM3 HC49USM5 HC49USM4 HC49USM6 HC49USM8

JESD97

Abstract: EBA06DRTN-S23 ABC60DRTN-S99 ANB10DHRN EZM24DRYH AMM12DRZH EZM24DSEH EZC12DREI BF64ABT emc10drmh
Contextual Info: Marking Insulator Material Terminal Plating Terminal Material Maximum ABB105DHHN N/A ABB105DHHN Y N JESD97 JESD97 1 260 Deg. C Max 2 Minutes Max.; 3X +150 Deg. C Beryllium Copper Contact Surface: .000010" Gold; Termination: .000100" Pure Tin-Matte PPS ABB40DHHD

D150*h02l

Abstract: D150N d150nh02 STD150 STD150NH02L-1 DPAK 0181G D150Nh02l
Contextual Info: STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK - IPAK STripFET™ IlI Power MOSFET General features Type VDSSS RDS on ID STD150NH02L STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A ) s ( t 3 3 1 • RDS(on) * Qg industry’s benchmark

m1 250c fuse

Abstract: at32uc3c em 234 stepper dtx 370 DTH block diagram lta 301 VT 546 Modem basic circuit diagram EIC 4021 shift registers 4050
Contextual Info: Features • High Performance, Low Power 32-bit AVR Microcontroller – – – – • • • • • • • • • • • • Compact Single-cycle RISC Instruction Set Including DSP Instruction Set Built-in Floating-Point Processing Unit FPU Read-Modify-Write Instructions and Atomic Bit Manipulation

ipc 840

Abstract: JEDEC J-STD-033 JESD97 J-STD-020 J-STD-033
Contextual Info: PRODUCT DATA SHEET P7608 Family HIGH POWER INDUCTOR Features Applications ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Lead-free Pb-free RoHS compliant High Current (to 30A) Low DCR (to 1mΩ) Foil windings Closed magnetic circuit DC-DC Converters

0603 footprint IPC

Abstract: 33 1004 0605 INDUCTOR 0705-180M
Contextual Info: PRODUCT DATA SHEET P7607 Family SHIELDED POWER INDUCTOR Features Applications ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Lead-free Pb-free RoHS compliant Magnetic Shielding High Current (to 5A) Low DCR (to 19mΩ) Low profile (2.5 - 5mm) Wide range (1µH – 1000µH)

AT91SAM3U4

Abstract: at91sam3 1N1308 MAR 735 REGULATOR IC 7912 pin identify AT91SAM3U4E SAM3u1 AT91SAM3U 3961 G.E 0x20180
Contextual Info: Features • Core • • • • • • – ARM Cortex®-M3 revision 2.0 running at up to 96 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set Memories – From 64 to 256 Kbytes embedded Flash, 128-bit wide access, memory accelerator,

Contextual Info: STE30NK90Z N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESH MOSFET General features Type VDSS RDS on ID Pw STE30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ) s ( ct

EEPROM

Abstract: M93C86
Contextual Info: M93C86, M93C76, M93C66 M93C56, M93C46 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit 8-bit or 16-bit wide MICROWIRE serial access EEPROM Features • Industry standard MICROWIRE bus ■ Single supply voltage: – 4.5 V to 5.5 V for M93Cx6 – 2.5 V to 5.5 V for M93Cx6-W

STMicroelectronics

Abstract: op07 op07 equivalent op07 equivalent single supply OP07CN t2d5
Contextual Info: OP07 Very low offset single bipolar operational amplifier Features • Extremely low offset: 150µV/ max. ■ Low input bias current: 1.8nA ■ LOW Vio drift: 0.5µV/°C ■ Ultra stable with time: 2µV/month max. ■ Wide supply voltage range: ±3V to ± 22V

tray data for lga16

Contextual Info: LIS244AL MEMS motion sensor: 2-axis - ±2g ultracompact linear accelerometer Features • Single voltage supply operation ■ ± 2g full-scale ■ Output voltage, offset and sensitivity are ratiometric to the supply voltage ■ Factory trimmed device sensitivity and offset

Z117

Abstract: X117 LIS331AL LIS331ALTR
Contextual Info: LIS331AL MEMS inertial sensor: 3-axis - ±2g analog output “nano” accelerometer Features • Single voltage supply operation ■ ±2.0g full-scale ■ Output voltage, offset and sensitivity are ratiometric to the supply voltage ■ Factory trimmed device sensitivity and offset

Contextual Info: M74HC09 Quad 2-input and gate open drain Features • HIgh Speed: tPD = 7ns (Typ.) at VCC = 6V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s Description P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b OOrder codes e t e l

f25nm60n

Abstract: P25NM60 w25nm60 F25NM60 P25NM60N w25nm60n F25NM TO247 package dissipation p25n
Contextual Info: STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features RDS on max VDSS (@Tjmax) Type ID 3 3 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O Application

2ST5949

Abstract: 0015923C
Contextual Info: 2ST5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC s ct Application ■ 1 u d o 2r P e Audio power amplifier

GCM 38112

Abstract: Wifi to I2C ST ATUC3A4256S AT32UC3A3 dsp ssb modulation demodulation barcode reader using avr AT32UC3A64 ATUC3A3256 DesignWare Hi-Speed USB On-The-Go Controller AT32UC3A3256S
Contextual Info: Features • High Performance, Low Power 32-bit AVR Microcontroller • • • • • • • • • • • • – Compact Single-Cycle RISC Instruction Set Including DSP Instruction Set – Read-Modify-Write Instructions and Atomic Bit Manipulation

LD1117

Abstract: LD1117 date code LD1117-18 ld1117c JESD97 LD1117D12TR LD1117S12TR LD1117-33
Contextual Info: LD1117 series Low drop fixed and adjustable positive voltage regulators Feature summary • Low dropout voltage 1V TYP. ■ 2.85V Device performances are suitable for SCSI-2 active termination ■ Output current up to 800 mA ■ Fixed output voltage of: 1.2V, 1.8V, 2.5V,

st 339

Abstract: JESD97 SSOP28 SSOP-28 ST3243E TSSOP28 15KV
Contextual Info: ST3243E ±15KV ESD protected 3 to 5.5V, 400Kbps, RS-232 Transceiver with auto-powerdown General features • ESD protection for RS-232 I/O pins: – ±8kV IEC 1000-4-2 contact discharge – ±15kV human body model ■ 1µA supply current achieved when in autopowerdown

st 2904

Abstract: lm2904 2904Y diode k403 lm2904 so MARKING k403
Contextual Info: LM2904 Low power dual operational amplifier Features • Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth unity gain : 1.1MHz (temperature compensated) ■ Very low supply current/op (500µA) essentially independent of supply voltage

ISOWATT218FX

Abstract: HD1530FX ecopack JESD97
Contextual Info: HD1530FX High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display Features • STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1 ■ WIDER RANGE OF OPTIMUM DRIVE CONDITIONS ■ LESS SENSITIVE TO OPERATING

Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3