JESD22A113 Search Results
JESD22A113 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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LST67BContextual Info: VLM.33. www.vishay.com Vishay Semiconductors Power SMD LED PLCC-2 FEATURES • Utilizing AS AlInGaP technology • Available in 8 mm tape • Luminous intensity and color categorized per packing unit • Luminous intensity ratio per packing unit IVmax./IVmin. ≤ 1.6 |
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JESD22-A114-B J-STD-020 AEC-Q101 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 LST67B | |
Contextual Info: VLMK310. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • SMD LED with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement equipment • EIA and ICE standard package • Compatible with IR reflow, vapor phase |
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VLMK310. J-STD-020 JESD22-A114-B AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. | |
Contextual Info: VLMD31. Vishay Semiconductors Standard SMD LED PLCC-2 94 8553 DESCRIPTION This device has been designed for applications requiring narrow brightness and color selection. The package of this device is the PLCC-2. It consists of a lead frame which is embedded in a |
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VLMD31. J-STD-020 2002/95/EC 2002/96/EC JESD22-A114-B AEC-Q101 2011/65/EU 2002/95/EC. 2011/65/EU. | |
LWT67Contextual Info: VLMW33. Vishay Semiconductors Power SMD LED PLCC-2 FEATURES • High efficient InGaN technology • Chromaticity coordinate categorized acc. to CIE1931 per packing unit • Typical color temperature 5500 K • ESD-withstand voltage: up to 1 kV according to JESD22-A114-B |
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VLMW33. CIE1931 JESD22-A114-B J-STD-020 2002/95/EC 2002/96/EC AEC-Q101 2011/65/EU 2002/95/EC. LWT67 | |
Contextual Info: VLMC310. Vishay Semiconductors Low Current SMD LED PLCC-2 FEATURES • SMD LED with exceptional brightness • Compatible with automatic placement equipment • EIA and ICE standard package • Compatible with infrared, vapor phase and wave solder processes according |
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VLMC310. J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
Contextual Info: BGA7017 30 MHz to 6000 MHz broadband gain block Rev. 3 — 30 October 2012 Objective data sheet 1. Product profile 1.1 General description The BGA7017 MMIC is a Darlington amplifier, available in a low-cost surface-mount package. It delivers 17 dBm output power at 1 dB gain compression and superior |
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BGA7017 BGA7017 | |
smd diode code met
Abstract: VLMV3100
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VLMV3100 J-STD-020 2002/95/EC 2002/96/EC JESD22-A114-B AEC-Q101 2011/65/EU 2002/95/EC. 2011/65/EU. smd diode code met VLMV3100 | |
Contextual Info: TH72005 315MHz FSK/ASK Transmitter Features ! ! ! ! ! ! ! ! Fully integrated PLL-stabilized VCO Frequency range from 290 MHz to 350 MHz Single-ended RF output FSK through crystal pulling allows modulation from DC to 40 kbit/s High FSK deviation possible for wideband data |
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TH72005 315MHz 10-pin ISO14001 June/07 | |
samsung LED
Abstract: SPMRDT3225A0 Date code samsung resistors jedec jesd22-a108 lot date code samsung JESD22-A101 JESD22-A108 JESD22-A113 samsung resistors AEC-Q101
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SPMRDT3225A0 samsung LED SPMRDT3225A0 Date code samsung resistors jedec jesd22-a108 lot date code samsung JESD22-A101 JESD22-A108 JESD22-A113 samsung resistors AEC-Q101 | |
7833 regulator pin diagram
Abstract: PN-15 65 MHZ - 125MHZ rf transmitter Sn60Pb40A ESGD3000A J-STD-006 REGULATOR 7833 8593E ACPM-7833 ACPM-7833-BLK
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ACPM-7833 CDMA1900 ACPM-7833 5988-9730EN 5989-0403EN Sn6337A Sn60Pb40A J-STD-006. JESD22-B102-C. 7833 regulator pin diagram PN-15 65 MHZ - 125MHZ rf transmitter ESGD3000A J-STD-006 REGULATOR 7833 8593E ACPM-7833-BLK | |
jesd22-a108B
Abstract: JESD22-A108-B JESD22-A104B S510067 JESD22-A114 JESD78
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S510065-55Z S510067-55Z RQR-104850 S510065-55Z JESD22-A108B JESD22-A102C JESD22-A104B JESD22-A103B JESD22-B102C jesd22-a108B JESD22-A108-B JESD22-A104B S510067 JESD22-A114 JESD78 | |
JESD22-B102-C
Abstract: SOT-86 sot86 transistor c 5586 q404 transistor SGA-6486Z SGA-6286 JESD22-B102C q402 transistor transistor 5586
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OT-86 SGA-2186 SGA-2286 SGA-2386 SGA-2486 SGA-3286 SGA-3386 SGA-3486 SGA-3586 SGA-4186 JESD22-B102-C SOT-86 sot86 transistor c 5586 q404 transistor SGA-6486Z SGA-6286 JESD22-B102C q402 transistor transistor 5586 | |
ESD test plan
Abstract: CGA-0116 0116 led JESD22-A103 1100C JESD22-A114 RQR-103796 1500C
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CGA-0116 RQR-103796 CGA-0116 195oC. CGA-0116. ESD test plan 0116 led JESD22-A103 1100C JESD22-A114 1500C | |
SBW5089
Abstract: JESD22-A110 sirenza microdevice sot-89 TRANSISTOR a105 JESD22-A113 JESD22-A114 SBA-4089 SBA-5089 SBF-4089 SBF-5089
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SBA-5089 SBA-4089 SBF-5089 SBF-4089 SBW-5089 RQR-103306- SBA-5089 SBA-5089BA-5089, SBW5089 JESD22-A110 sirenza microdevice sot-89 TRANSISTOR a105 JESD22-A113 JESD22-A114 SBA-4089 SBF-4089 SBF-5089 | |
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Sumitomo CRM1076NS
Abstract: SUMITOMO g600 CRM1076NS Compound R3589DR-S TISPA79R241DR-S J-STD-22 R3680DR-S crm1076 bourns R3679DR-S
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MS012, TISP3082F3DR-S TISP3125F3DR-S TISP3150F3DR-S TISP3180F3DR-S TISP3290F3DR-S TISP3380F3DR-S TISP4072F3DR-S TISP4125F3DR-S TISP4150F3DR-S Sumitomo CRM1076NS SUMITOMO g600 CRM1076NS Compound R3589DR-S TISPA79R241DR-S J-STD-22 R3680DR-S crm1076 bourns R3679DR-S | |
STQ2016Z
Abstract: JESD22-A104B SRF-2016Z JESD22-A110 SRF-1016Z SRQ-2116Z STQ-1016Z STQ-2016Z STQ-3016Z TSSOP-16
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STQ-2016Z STQ-1016Z SRF-1016Z SRQ-2116Z STQ-3016Z SRF-2016Z RQR-104756 SRQ-2116Z, STQ2016Z JESD22-A104B SRF-2016Z JESD22-A110 SRQ-2116Z TSSOP-16 | |
JESD22-A102C
Abstract: JESD22-A104B SGB-6433Z SGB-4533Z SGB-6533 SGB-2233Z JESD22-A-104B JESD22-A113C SGB-6433 SGB-6533Z
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SGB-6533 SGB-6533Z SGB-2233 SGB-2433 SGB-2233Z SGB2433Z SGB-4333 SGB-4533 SGB-6433 SGB-4333Z JESD22-A102C JESD22-A104B SGB-6433Z SGB-4533Z JESD22-A-104B JESD22-A113C SGB-6433 | |
SBB-2089Z
Abstract: sbb2089z SBB5089 SBB-4089 darlington pair transistor SBB-2089 SBB-3089 SBB2089 SBB-1089 SBB5089Z
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SBB-2089Z SBB-1089 SBB-1089Z SBB-3089Z SBB-4089Z SBB-5089Z CGB-1089Z SBB-2089 SBB-4089 SBB-5089 SBB-2089Z sbb2089z SBB5089 SBB-4089 darlington pair transistor SBB-2089 SBB-3089 SBB2089 SBB-1089 SBB5089Z | |
SPF-5043Z
Abstract: spf5043z spf-5043 5043Z SPF 5043Z JESD22-A104B JESD22-A108B JESD22-A114 JESD22-A-108-B SOT343 lna
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SPF-5043Z RQR-105880 SPF-5043Z SPF-50 JESD22-A103B JESD22-B102C spf5043z spf-5043 5043Z SPF 5043Z JESD22-A104B JESD22-A108B JESD22-A114 JESD22-A-108-B SOT343 lna | |
SPF-5122Z
Abstract: spf-5122 SPF5122z precondition DIP JEDEC spf 5122 JESD22-A104B JESD22-A108B JESD22-A114 ESD test plan JESD22-B102C
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SPF-5122Z RQR-105879 SPF-5122Z SPF-51 JESD22-A103B Sn63/Pb37 JESD22-B102C spf-5122 SPF5122z precondition DIP JEDEC spf 5122 JESD22-A104B JESD22-A108B JESD22-A114 ESD test plan JESD22-B102C | |
SGA6489Z
Abstract: IC 7489 JESD22-B102-C SGA6389Z SGA-5589Z SGA-7489 SGA-6489 SGA-9289Z SGA9189Z SGC-6489
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OT-89 SGA-5289 SGA-5389 SGA-5489 SGA-5589 SGA-6289 SGA-6389 SGA-6489 SGA-6589 SGA-7489 SGA6489Z IC 7489 JESD22-B102-C SGA6389Z SGA-5589Z SGA-7489 SGA-6489 SGA-9289Z SGA9189Z SGC-6489 | |
JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE ANDContextual Info: V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF |
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B048K480T30 P/N27688 07/04/10M JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND | |
transistor af 126
Abstract: JESD22-B-107-A J-STD-029 mount chip transistor 332
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B048K120T20 7/03/10M transistor af 126 JESD22-B-107-A J-STD-029 mount chip transistor 332 | |
Contextual Info: T H AT Corporation Low Cost, Balanced Line Receiver ICs THAT 1250, 1253, 1256 FEATURES APPLICATIONS • Good CMRR: typ. 50dB at 60Hz · Low cost, self contained · Excellent audio performance · Balanced Audio Line Receivers · Instrumentation Amplifiers · Wide bandwidth: typ. >8.6 MHz |
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1250-series |