JEDEC TO-78 CASE Search Results

MD918

Abstract: MD918A be21 MD918B jedec to-78 case md918 Transistor
Contextual Info: Dhta Sheet MD918 MD918A MD918B central ^ - - " sem iconductor Corp. NPN DUAL SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-78 CASE M anufacturers of W orld Class Discrete Semiconductors

Contextual Info: , L/ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MD918 MD918A MD918B NPN DUAL SILICON TRANSISTOR JEDEC TO-78 CASE MD918 Series types are Silicon NPN Planar Epitaxial Dual Transistors designed for dual amplifier applications.

Contextual Info: FREESCALE SEMICONDUCTOR, INC. ALL RIGHTS RESERVED. TITLE: MECHANICAL OUTLINE 86 I/O PBGA STD MAP 17. 78 X 16. 26 1. 524 PITCH PRINT VERSION NOT TO SCALE DOCUMENT NO: 98ASA99323D REV: A CASE NUMBER: 1374-01 01 JUN 2005 STANDARD: NON-JEDEC NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETERS.

2N2918

Contextual Info: Datasheet rpntrni M ^ TM 2N2918 Sem iconductor Corp. NPN SILICON DUAL TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC TO-78 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2918 is a silicon NPN dual transistor utilizing two individual chips mounted

MD8003

Abstract: MD8002 MD8001
Contextual Info: Datasheet MD8001 MD8002 MD8003 Camlf'iinfliietap J U I I I I I l U I I I I U I l l l l l f fiptt 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 NPN SILICON DUAL TRANSISTOR JEDEC TO-78 CASE Manufacturers of World Class Discrete Semiconductors

d677a

Abstract: d676 D675A d681 d677
Contextual Info: SGS-THOMSON BD675/75A/77/ 77A/79/79A/81 BD676/76A/78/ 78A/80/80A/82 MEDIUM POWER DARLINGTONS DESCRIPTION The BD675, BD675A, BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configu­ ration and are mounted in Jedec TO-126 plastic

2n2917 dual transistor

Abstract: 2N2917
Contextual Info: Datasheet 2N2917 C o Gi vI tI PU f il li 1l T" W Semiconductor Cord . W l l l l W l l l i v V V w NPN SILICON DUAL TRANSISTOR l 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-78 CASE Manufacturers of World Class Discrete Semiconductors

BD180

Contextual Info: r z 7 SGS-THOMSON “ 7# B D175/77/79 BD176/78/80 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD175, BD177 and BD179 are silicon epitaxialbase NPN power transistors in Jedec TO-126 plas­ tic package intended for use in medium power linear

01e3

Abstract: SKB 30 / 02 SKB 7 02 AN9321 AN9322 HUF75631SK8 HUF75631SK8T MS-012AA TB334
Contextual Info: interrii H U F 7 5 6 3 1 S K 8 Data S h eet O c to b e r 1999 F ile N u m b e r 4 78 5 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance BRANDING DASH - rDS ON = 0 -0 3 9 Q , VGS = 10 V • Simulation Models

Contextual Info: • rrr 7 ^ 5 3 7 005536^ 3 ■ ^ T - 3 3 - 0 ° l_ sg s-th o m so n b d i 75/77/79 ^ 7# B P 17 6 /78/80 S 6 S-TH0MS0N 30E D MEDIUM POWER LINEAR AND SW ITCHING APPLICATIONS D E S C R IP T IO N The BD175, BD177 and BD179 are silicon epitaxialbase NPN power transistors in Jedec TO-126 plas­

2N2903

Abstract: 2N2903A 1q50
Contextual Info: 2N2903 2N2903A . NPN SILI C ON DUAL T R A N S I S T O R Central semiconductor Corp. JEDEC TO-78 CASE 14 5 Adams Avenue Hauppauge, New York 11 7 8 8 -H > 1 vn o o O DESCRIPTION The C E N T R A L S E M I C O N D U C T O R 2N2903, A types are sili co n NPN dual t r a n s is to rs m a n uf a ctured by

2N3726

Abstract: 2N3727
Contextual Info: 2N3726 » iitlifC T C T Central Semiconductor Corp. ♦I 2 N 3 72 7 PNP DUAL SILICON T R A N S IS T OR JEDEC TO-78 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 D ES C RI PT I O N The CENTRAL S E M I C O N D U C T O R 2N3726, 2N 37 2 7 types are silicon PNP dual t r a n si st or s m an uf a c t u r e d

S5KP10C

Abstract: S5KP10CA S5KP11C S5KP11CA S5KP12C
Contextual Info: Certificate TH97/10561QM SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VRM : 5.0 - 180 Volts PPK : 5000 Watts D2PAK FEATURES : 0.357 9.1 1 2 3 0.110(2.8) 0.236(6.0) 0.197(5.0) 0.055(1.4) 0.039(1.0) 2 * Case : D PAK(TO-263) * Epoxy : UL94V-O rate flame retardant

S5KP10

Abstract: S5KP10A S5KP11 S5KP11A S5KP12
Contextual Info: Certificate TH97/10561QM SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VRM : 5.0 - 180 Volts PPK : 5000 Watts D2PAK FEATURES : 2 * Case : D PAK TO-263 * Epoxy : UL94V-O rate flame retardant * Lead : Surface Mount per J-STD-020C, Method 208 guaranteed * Polarity : Heatsink is Anode

S5KP10

Abstract: S5KP10A S5KP11 S5KP11A S5KP12
Contextual Info: Certificate TH97/10561QM SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VRM : 5.0 - 180 Volts PPK : 5000 Watts D2PAK FEATURES : 2 * Case : D PAK TO-263 * Epoxy : UL94V-O rate flame retardant * Lead : Surface Mount per J-STD-020C, Method 208 guaranteed * Polarity : Heatsink is Anode

S5KP10

Abstract: S5KP10A S5KP11 S5KP11A S5KP12
Contextual Info: Certificate TH97/10561QM SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VRM : 5.0 - 180 Volts PPK : 5000 Watts D2PAK FEATURES : 2 * Case : D PAK TO-263 * Epoxy : UL94V-O rate flame retardant * Lead : Surface Mount per J-STD-020C, Method 208 guaranteed * Polarity : Heatsink is Anode

CR5U-020

Abstract: CR5U-010 CR5U-040 CR5U-060
Contextual Info: Datasheet CR5U-010 SERIES Central ULTRA FAST RECOVERY RECTIFIER 5.0 AMP, 100 THRU 1000 VOLTS Sem iconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-2Q1 AD CASE Manufacturers of World Class Discrete Semiconductors

Contextual Info: 3ÜE t ¡Oï S G • T 'îS 'iS a ? DD30121 8 -Z 'M 0! SGS-THOMSON itLiOTtoKS BCY78 BCY79 S-THO M SON LOW NOISE AUDIO AMPLIFIERS DESC RIPTIO N The BCY78 and BCY79 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case.They are designed for use in audio driver and low-noise

Contextual Info: Datasheet CRSH3 SERIES CSemeiconductor n t r oCorp. i SCHOTTKY BARRIER RECTIFIER 3 .0 AMPS. 20 THRU 60 VOLTS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC D0-201 AD CASE M anufacturers of W orld C lass Discrete S em iconductors

Contextual Info: SEMITRON INDUSTRIES LTD M3E T> 013700^ G00G173 T Œ S L C B - n -i SERI ES Zener Reference Diode 11V7 Volts Temperature Compensated FEATURES GLASS D07 • Hermetically sealed ■ DC power dissipation 500mW at 25°C FIG. 1 MECHANICAL DATA ■ Case: Hermetically sealed glass case D07

1N4202

Abstract: 1N1418 in3997 1N1744 1N4198 1n4235 1N4200 1N3442 1N2979 1N401
Contextual Info: 10 WATT, M e t a l JEDEC TYPE , NUMBERt NOMINAL ZENER VOLTAGE Vz Case DO-4, 10-32 Stud TEST CURRENT IZT MAXIMUM ZENER IMPEDANCE IZK ZZT @ IZT ZZK @ MAXIMUM REVERSE LEAKAGE CURRENT IR @ VR @25"C VOLTS mA Ohms Ohms 1N3993 1N3994 1N3995 1N3996 39 43 47 5 1

15KPA18CA

Abstract: 15KPA22A 15KPA30CA 15KW 15KPA17 15KPA280 15KPA280CA P600 15kpa20a
Contextual Info: LESHAN RADIO COMPANY, LTD. 15KW SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-17 TO 280 Volts 15000 Watt Peak Pulse Power 1.0 25.4 MIN 0.052(1.32) DIA 0.048(1.22) FEATURES 1.0(25.4) MIN 0.360(9.1) 0.340(8.6) 0.360(9.1) 0.340(8.6) 15KW(Case style P600)

Contextual Info: Pha. Power Capacitors www.vishay.com Vishay ESTA High Voltage AC Power Capacitors QUICK REFERENCE DATA Technology Film, polypropylene Voltage max. V 12 000 Output min. (kvar) 50 Output max. (kvar) 1000 FORM OF CONSTRUCTION In the case of single phase capacitor units with

92-100-B

Contextual Info: August 2008 IMSH1GS14A1F1C T IMSH1GS03A1F1C(T) IMSH2GS13A1F1C(T) 204-Pin Small-Outlined Dual-In-Line Memory Modules 1-GByte and 2-GByte DDR3 SDRAM EU RoHS compliant Advance Internet Data Sheet Rev. 0.63 Advance Internet Data Sheet IMSH[1G/2G]S[0/1][3/4]A1F1C(T)