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    JEDEC TO-3 METAL CASE Search Results

    JEDEC TO-3 METAL CASE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    JEDEC TO-3 METAL CASE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N3771

    Abstract: 2N3772 transistor 2n3772
    Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.


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    2N3771 2N3772 2N3771, 2N3772 2N3771/2N3772 P003F 2N3771 transistor 2n3772 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.


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    2N3771 2N3772 2N3771, 2N3772 PDF

    2N3772

    Abstract: 2N3771
    Text: 2N3771 2N3772  HIGH POWER NPN SILICON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.


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    2N3771 2N3772 2N3771, 2N3772 2N3771 PDF

    2N3771

    Abstract: 2N3772 2N3771 power circuit 2N3772 APPLICATIONS
    Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.


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    2N3771 2N3772 2N3771, 2N3772 2N3771 2N3771 power circuit 2N3772 APPLICATIONS PDF

    2N3772

    Abstract: 2N3771
    Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.


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    2N3771 2N3772 2N3771, 2N3772 2N3771 PDF

    2N3772

    Abstract: 2N3771 2N3772 APPLICATIONS 2N3771 canada 20A40
    Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.


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    2N3771 2N3772 2N3771, 2N3772 2N3771 2N3772 APPLICATIONS 2N3771 canada 20A40 PDF

    2N3771

    Abstract: 2N3772 P003N
    Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.


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    2N3771 2N3772 2N3771, 2N3772 2N3771 P003N PDF

    BU208A

    Abstract: TO-218 weight bu208a base bu508a BU508AFI equivalent BU508AFI T218
    Text: BU208A BU508A/BU508AFI  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N JEDEC TO-3 METAL CASE. TO-3 1 2 APPLICATIONS:


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    BU208A BU508A/BU508AFI ISOWATT218 E81734 BU208A, BU508A BU508AFI O-218 ISOWATT218 BU208A TO-218 weight bu208a base BU508AFI equivalent T218 PDF

    BU508A

    Abstract: bu208a bu508a diagram
    Text: BU208A BU508A/BU508AFI  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N JEDEC TO-3 METAL CASE TO-3 1 2 APPLICATIONS:


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    BU208A BU508A/BU508AFI ISOWATT218 E81734 BU208A, BU508A BU508AFI O-218 ISOWATT218 bu508a diagram PDF

    transistor mj3001 to-3

    Abstract: MJ3001 transistor mj3001
    Text: 1165911 Description: The MJ3001 is a silicon epitaxial-base NPN power transistors in monolithic darlington configuration and are mounted in JEDEC TO-3 metal case. They are intented for use in power linear and switching applications. TO-3 Internal Schematic Diagram


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    MJ3001 MJ3001 transistor mj3001 to-3 transistor mj3001 PDF

    508AFI

    Abstract: BU208A 508AF BU508A BU508AFI P003N bu508a diagram
    Text: BU208A/508A/508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N JEDEC TO-3 METAL CASE. TO-3 1 APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR


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    BU208A/508A/508AFI ISOWATT218 E81734 BU208A, BU508A BU508AFI O-218 ISOWATT218 508AFI BU208A 508AF P003N bu508a diagram PDF

    BU508A

    Abstract: BU208A BU508AFI
    Text: BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N JEDEC TO-3 METAL CASE. TO-3 1 APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR


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    BU208A BU508A/BU508AFI ISOWATT218 E81734 BU208A, BU508A BU508AFI O-218 ISOWATT218 BU208A PDF

    BU208A

    Abstract: BU508A BU508AFI BU508aFI equivalent TO-218 Package
    Text: BU208A BU508A/BU508AFI  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • ■ ■ ■ STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N JEDEC TO-3 METAL CASE. TO-3 1 APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR


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    BU208A BU508A/BU508AFI ISOWATT218 E81734 BU208A, BU508A BU508AFI O-218 ISOWATT218 BU208A BU508aFI equivalent TO-218 Package PDF

    MJ1000

    Abstract: MJ900 MJ901 mj1001 ic 901 adc 515 Comset
    Text: COMSET SEMICONDUCTORS MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS TO-3 The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and


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    MJ900/901/1000/1001 MJ900, MJ901, MJ1000 MJ1001 MJ900 MJ900 MJ901 ic 901 adc 515 Comset PDF

    BUX80

    Abstract: P003N transistor b 1185
    Text: BUX80 SILICON NPN SWITCHING TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BUX80 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, particularly intended for converters, inverters, switching regulators and motors control


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    BUX80 BUX80 P003N transistor b 1185 PDF

    BUR50

    Abstract: Jedec TO-3 metal case
    Text: r z 7 S C S -T H O M S O N ^ 7 # M M S iL I O T O K S BUR50 BU R 5 0 S HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTION The BUR50 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, the BU R50S is the same type in Jedec TO-3 metal case,


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    BUR50 BUR50-BUR50S Jedec TO-3 metal case PDF

    Untitled

    Abstract: No abstract text available
    Text: rz 7 ^7# SGS-m0MS0N 2N3771 [ïfflOeœilLHera «® 2N3772 HIGH POWER NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear


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    2N3771 2N3772 2N3771, 2N3772 2N3771/2N3772 P003F PDF

    3771

    Abstract: ot 409 transistor 2N3771 2N 3771
    Text: SGS-THOMSON 2N3771 2N3772 Kl gKLiM(s !0(gS HIGH POWER NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended tor linear amplitiers and inductive switching applications.


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    2N3771 2N3772 2N3771, 2N3772 3771 ot 409 transistor 2N3771 2N 3771 PDF

    BUX44

    Abstract: No abstract text available
    Text: SGS-THOMSON BUX44 HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUX44 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, intented for high voltage, fast switching applications. TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol


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    BUX44 BUX44 PDF

    BSY95A

    Abstract: BSY95
    Text: BSY95A NPN Silicon Epitaxial Planar Transistor for general purpose switching applications max.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings Symbol


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    BSY95A 100mA 100mA BSY95A BSY95 PDF

    BUX43

    Abstract: No abstract text available
    Text: SGS-THOMSON IMIBCB lllLieTB©C80e8 S G S - T HO MS ON BUX43 30E D HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUX43 is a silicon multiepitaxiai mesa NPN transistor in Jedec TO-3 metal case, intented for high voltage, fast switching applications. TO -3 ABSOLUTE MAXIMUM RATINGS


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    C80e8 BUX43 BUX43 PDF

    2N2222 circuit

    Abstract: 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance
    Text: 2N2222 NPN Silicon Epitaxial Planar Transistor with high cutoff frequency, for high speed switching mox.0.5^ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings


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    2N2222 2N2222 circuit 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance PDF

    2N2222A

    Abstract: J 2N2222A Transistor 2N2222A 2N2222A npn transistor 2N2221A 2N2221A-2N2222A BR 2N2222A NPN 2N222 2n2222a transistor Metal 2n2222a
    Text: 2N2221A, 2N2222A NPN Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching mox.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings


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    2N2221A, 2N2222A 2N2222A 2N2221A J 2N2222A Transistor 2N2222A 2N2222A npn transistor 2N2221A-2N2222A BR 2N2222A NPN 2N222 2n2222a transistor Metal 2n2222a PDF

    2N2907A

    Abstract: 2N2906A
    Text: 2N2906A, 2N2907A PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings


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    2N2906A, 2N2907A 2N2907A 2N2906A PDF