2N3771
Abstract: 2N3772 transistor 2n3772
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.
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2N3771
2N3772
2N3771,
2N3772
2N3771/2N3772
P003F
2N3771
transistor 2n3772
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Untitled
Abstract: No abstract text available
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.
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2N3771
2N3772
2N3771,
2N3772
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2N3772
Abstract: 2N3771
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.
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2N3771
2N3772
2N3771,
2N3772
2N3771
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2N3771
Abstract: 2N3772 2N3771 power circuit 2N3772 APPLICATIONS
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.
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2N3771
2N3772
2N3771,
2N3772
2N3771
2N3771 power circuit
2N3772 APPLICATIONS
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2N3772
Abstract: 2N3771
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.
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2N3771
2N3772
2N3771,
2N3772
2N3771
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2N3772
Abstract: 2N3771 2N3772 APPLICATIONS 2N3771 canada 20A40
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.
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Original
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2N3771
2N3772
2N3771,
2N3772
2N3771
2N3772 APPLICATIONS
2N3771 canada
20A40
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2N3771
Abstract: 2N3772 P003N
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.
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2N3771
2N3772
2N3771,
2N3772
2N3771
P003N
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BU208A
Abstract: TO-218 weight bu208a base bu508a BU508AFI equivalent BU508AFI T218
Text: BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N JEDEC TO-3 METAL CASE. TO-3 1 2 APPLICATIONS:
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BU208A
BU508A/BU508AFI
ISOWATT218
E81734
BU208A,
BU508A
BU508AFI
O-218
ISOWATT218
BU208A
TO-218 weight
bu208a base
BU508AFI equivalent
T218
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BU508A
Abstract: bu208a bu508a diagram
Text: BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N JEDEC TO-3 METAL CASE TO-3 1 2 APPLICATIONS:
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BU208A
BU508A/BU508AFI
ISOWATT218
E81734
BU208A,
BU508A
BU508AFI
O-218
ISOWATT218
bu508a diagram
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transistor mj3001 to-3
Abstract: MJ3001 transistor mj3001
Text: 1165911 Description: The MJ3001 is a silicon epitaxial-base NPN power transistors in monolithic darlington configuration and are mounted in JEDEC TO-3 metal case. They are intented for use in power linear and switching applications. TO-3 Internal Schematic Diagram
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MJ3001
MJ3001
transistor mj3001 to-3
transistor mj3001
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508AFI
Abstract: BU208A 508AF BU508A BU508AFI P003N bu508a diagram
Text: BU208A/508A/508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N JEDEC TO-3 METAL CASE. TO-3 1 APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR
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BU208A/508A/508AFI
ISOWATT218
E81734
BU208A,
BU508A
BU508AFI
O-218
ISOWATT218
508AFI
BU208A
508AF
P003N
bu508a diagram
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BU508A
Abstract: BU208A BU508AFI
Text: BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N JEDEC TO-3 METAL CASE. TO-3 1 APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR
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Original
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BU208A
BU508A/BU508AFI
ISOWATT218
E81734
BU208A,
BU508A
BU508AFI
O-218
ISOWATT218
BU208A
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PDF
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BU208A
Abstract: BU508A BU508AFI BU508aFI equivalent TO-218 Package
Text: BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • ■ ■ ■ STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N JEDEC TO-3 METAL CASE. TO-3 1 APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR
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BU208A
BU508A/BU508AFI
ISOWATT218
E81734
BU208A,
BU508A
BU508AFI
O-218
ISOWATT218
BU208A
BU508aFI equivalent
TO-218 Package
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PDF
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MJ1000
Abstract: MJ900 MJ901 mj1001 ic 901 adc 515 Comset
Text: COMSET SEMICONDUCTORS MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS TO-3 The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and
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MJ900/901/1000/1001
MJ900,
MJ901,
MJ1000
MJ1001
MJ900
MJ900
MJ901
ic 901
adc 515
Comset
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BUX80
Abstract: P003N transistor b 1185
Text: BUX80 SILICON NPN SWITCHING TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BUX80 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, particularly intended for converters, inverters, switching regulators and motors control
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BUX80
BUX80
P003N
transistor b 1185
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BUR50
Abstract: Jedec TO-3 metal case
Text: r z 7 S C S -T H O M S O N ^ 7 # M M S iL I O T O K S BUR50 BU R 5 0 S HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTION The BUR50 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, the BU R50S is the same type in Jedec TO-3 metal case,
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OCR Scan
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BUR50
BUR50-BUR50S
Jedec TO-3 metal case
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Untitled
Abstract: No abstract text available
Text: rz 7 ^7# SGS-m0MS0N 2N3771 [ïfflOeœilLHera «® 2N3772 HIGH POWER NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear
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OCR Scan
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2N3771
2N3772
2N3771,
2N3772
2N3771/2N3772
P003F
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3771
Abstract: ot 409 transistor 2N3771 2N 3771
Text: SGS-THOMSON 2N3771 2N3772 Kl gKLiM(s !0(gS HIGH POWER NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended tor linear amplitiers and inductive switching applications.
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OCR Scan
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2N3771
2N3772
2N3771,
2N3772
3771
ot 409
transistor 2N3771
2N 3771
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BUX44
Abstract: No abstract text available
Text: SGS-THOMSON BUX44 HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUX44 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, intented for high voltage, fast switching applications. TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol
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OCR Scan
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BUX44
BUX44
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BSY95A
Abstract: BSY95
Text: BSY95A NPN Silicon Epitaxial Planar Transistor for general purpose switching applications max.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings Symbol
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OCR Scan
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BSY95A
100mA
100mA
BSY95A
BSY95
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BUX43
Abstract: No abstract text available
Text: SGS-THOMSON IMIBCB lllLieTB©C80e8 S G S - T HO MS ON BUX43 30E D HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUX43 is a silicon multiepitaxiai mesa NPN transistor in Jedec TO-3 metal case, intented for high voltage, fast switching applications. TO -3 ABSOLUTE MAXIMUM RATINGS
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OCR Scan
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C80e8
BUX43
BUX43
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2N2222 circuit
Abstract: 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance
Text: 2N2222 NPN Silicon Epitaxial Planar Transistor with high cutoff frequency, for high speed switching mox.0.5^ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings
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OCR Scan
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2N2222
2N2222 circuit
2N2222 npn
2N2222
2n2222 test circuit
2N2222 base capacitance
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2N2222A
Abstract: J 2N2222A Transistor 2N2222A 2N2222A npn transistor 2N2221A 2N2221A-2N2222A BR 2N2222A NPN 2N222 2n2222a transistor Metal 2n2222a
Text: 2N2221A, 2N2222A NPN Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching mox.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings
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OCR Scan
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2N2221A,
2N2222A
2N2222A
2N2221A
J 2N2222A
Transistor 2N2222A
2N2222A npn transistor
2N2221A-2N2222A
BR 2N2222A NPN
2N222
2n2222a transistor
Metal 2n2222a
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2N2907A
Abstract: 2N2906A
Text: 2N2906A, 2N2907A PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings
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OCR Scan
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2N2906A,
2N2907A
2N2907A
2N2906A
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