rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2005 RELEASED FOR PUBLICATION BY - 2 3 OCT. 2005 LOC E ALL RIGHTS RESERVED. D B P ES HOL DESCRIPTION LTR B2 B3 DATE DWN APVD Released as per ECR-09-006012 16-MAR-09 SP JC ECR-13-007968 14MAY2013 KR TN 2 FOR A SPECIFIC PN FOR A RESISTANCE VALUE
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ECR-09-006012
16-MAR-09
ECR-13-007968
14MAY2013
1000Hrs
50ppm
25ppm
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Untitled
Abstract: No abstract text available
Text: REVISIONS D fiA iV lS G MADE IN AMERICAN PH O iEC T'O N B1 COZ^Máx B2 REVISED PER ECO-09-0221 78 ECR-10-022530 i 1 DWN DATE DESCRIPTION LTR APVD AEG KK 25SEP09 14FEB11 KK HMR !=P Jio a jC C T <*8> 3í í r 0 0 5 C1lA $3 i / * i 0,1 s D1A" (S W ns %}—
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25SEP09
ECO-09-0221
ECR-10-022530
14FEB11
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cd 3313 eo
Abstract: SIS630 sis 630 TFK U 111 B TFK U 4311 B 340S2 tfk 014 TFK S 153 P 101 SIS-630 PPCV
Text: 13/ SlEYiCTRL Q RTTCTWL 340S2 REV: 05 PN:37-38016U -50 -JiliSMCEIHERMON ,AU1 Afc£2ac 23 23 23 .AN31 A i 23. . AL», _AM2Zc A U JC JiMaiL HR&oy? HREQfi H V 33 HREOfO •> wtj5 1 W H - » fVMUJ ~FTOT "hOTT H HA«? u* vu tu a or oc m i* W M IP M '* a et ec S k t e v tr
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340S2
37-38016U
AN29C
BLM1MZ71S
W11A231S
cd 3313 eo
SIS630
sis 630
TFK U 111 B
TFK U 4311 B
340S2
tfk 014
TFK S 153 P 101
SIS-630
PPCV
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Untitled
Abstract: No abstract text available
Text: REVISIONS i m MÆA * DCP No: 1398 DESCRIPTION DRAWN DATE CHECKD DATE APPRVD DATE 14-53 A RELEASED JWM 8 /2 7 /0 3 JC 8 /2 8 /0 3 DJC 8 /2 8 /0 3 V V A nn n r J3 u. u SL A V E Dn n D U. U _ POWER SUPPLY 4 MASTER TFMMfA 7 2 -7 2 4 5 i o 1 Effective: 7 / 8 / 0 2
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SPC--F004
20Megohms
30Megohms
00V/120V/220V
50/60Hz
255mm
145mm
265mm
-F004
22H6396
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.j3T
Abstract: No abstract text available
Text: s fit C JZ /À fP JÆ JC /s r PINS AND SNAP RINGS ¿ ¿ -/S WIRE CRIMP CRIM P SYMBOL DIM a a - / s GO NO GO TERM M AL CRIMP HEIGHT JX Z 5 M T S */=> / -Æ /G NO GO TÄ /s r a z - / s INSULATION CRH4P CRIM P SYMBOL DIM Z 2 -/Ö A GO f L Ç & 0 O S LO 7-k INACTIVE,
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3SZ07
ECO-11-005294
HMRI2APR11
.j3T
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Untitled
Abstract: No abstract text available
Text: H AMI A 'p • 'M il i Ht . î = i h1r ôàÀAJnm * • c_r . A .* * * V ’ or’ «a_i, o t /-.mucu^u - [M.s 3^ Í aNV V-«,< - o e e « P i^ c M » M i r & i / c n 5 e ^ t ü >r«iffw x x jf rii^ia ' « j* * 'w»^enw h««t » « jc * " l ü -ww« ~|‘ ~>*/& tÜNDtm: C t HJT*_T_ ii.s.ai
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Untitled
Abstract: No abstract text available
Text: 6 1 AA 22 ECO-11-OUS7B A MECHANICAL: 6610176-5 Mag45tw YYW W D CH IN A MMNQ012 JC KZ M ATE R IALS: -H O USING - TH ERM O PLASTIC PET P O LY E ST E R FLA M M A B ILIT Y RATING UL 9 W - 0 . -S H IE L D - .010" THICK. C26800 B R A S S P R E P LA T E D WITH 3 0 m INCH MIN SEM I-BRIGHT
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ECO-11-OUS7B
MMNQ012
Mag45tw
C26800
50plNCH
100plNCH
746K1
00779J
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2SK680
Abstract: 2sk68 TRANSISTOR DG S-10 tc6106
Text: M O S Field Effect Power Transistor 2SK680Ü, N - f ?Wb|ÊÉ ^“'7 - M 0 S F E T T ', J : £ i f i f ê l i I ! j * r 5 T t b £ : x -i v - f > i , ^ 7 i t i t i 5 V t l# JC « ( ¥ f i 4 .5 ± 0 .1 X T 't„ f f if t - C V 'S f c t f ) , T : m m ) ?
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2SK680
2SK680Ã
Cycled50
0-47L
2SK680
2sk68
TRANSISTOR DG S-10
tc6106
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A1000-REV00k9040-IE
Abstract: AX-REM01K9050-IE a1000-fia3071-re A1000-FIV3005-RE A1000-REV00k6050-IE A1000FIA3105RE AX-FIM1024-RE
Text: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/238731'</32+ +22'/3 ";CI?A; A?;CI;, ? ? :;:?97I?7AH;IIDG;;A;IIGDC?9D G;AE;G9?G9J?IDHI7BE7ID B?9GD?CI;GGJIIDG? ;99
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AFAA
Abstract: HCJ 5B hcj 91 hcj 6a a5lc
Text: 97-07,9 <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHVWTKU _ x=;< G9BG=H=J9o ecgj1 _ {CK <9=;<Ho fjcl AA _ j?0 8=9@97HF=7 GHF9B;H< ^69HK99B 7C=@ 5B8 7CBH57HG_ _ sF99D5;9 8=GH5B79o feAA _ 0tueihjdekhfdelee _ *FC8I7H =B 577CF85B79 HC yus kehhjbf 5J5=@56@9 _ -C7?9HG 5J5=@56@9
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69HK99B
7CBH57HG_
sF99D5
GH5B79o
577CF85B79
sCBH57H
GH5B79
CF89F
AFAA
HCJ 5B
hcj 91
hcj 6a
a5lc
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 425 N M10 screwing depth max. 18,0 plug A 2,8 x 0,8 4K 5G 31 50 7K 6G 44 3 1 2 25 25 100 112 124 6 144 K AK A G K G K VWK February 1996 TT 425 N, TD 425 N, DT 425 N
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tt 95 n 12
Abstract: TT430 TT 56 N 1200
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 430 N M10 screwing depth max. 18,0 plug A 2,8 x 0,8 4K 5G 31 50 7K 6G 44 3 1 2 25 25 100 112 124 6 144 K AK A G K G K VWK February 1996 TT 430 N,TD 430 N, DT 430 N Elektrische Eigenschaften
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tt 500 n 14
Abstract: 1tt500 ctt500
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 500 N M10 screwing depth max. 18,0 plug A 2,8 x 0,8 4K 5G 31 50 7K 6G 44 3 1 2 25 112 6 144 100 25 124 K AK A G K G K VWK February 1996 TT 500 N Elektrische Eigenschaften
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kl3 ox
Abstract: No abstract text available
Text: KO R^kb^l Kn`4RgZi2bg S^kfbgZe Sri^.c~{<7K/1 RmZg]Zk].ymJ/ FEASTQER 63 Dbk^\mer fhngmZ[e^ hg ikbgm^] \bk\nbm [hZk] pbmahnm ahe]^kl3 73 RfZee^k ehp ikh_be^ lbs^l maZg hk]bgZkr \ZiZ\bmhkl3 83 S^kfbgZe liZ\bg` _bq^] Zm 65ff _hk OC [hZk] ien` bg3 93 Aenfbgnf \Zl^ ]^lb`g^] ^qiehlbhg2ikhh_ o^gm3
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O3688
kl3 ox
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chn 539
Abstract: chn 537 chn 637 955 539 ic cn 7555 CQC57556556 XISO69556 kl 668 A5655 85VDC
Text: 8E1},-4~,-4/ .HF9>F4HF9>FA/ :7;7/@A>3 =<C3> >39/D 4IFSTQIR Y :A mqcn]bcha ][j[\cfcns Y 6 Filg A ]ih`caol[ncih Y 7KV ^c_f_]nlc] mnl_hanb .\_nq_h ]icf [h^ ]ihn[]nm/ Y Sfcg mct_.qc^nb :gg1b_cabn 673:gg/ Y Hcab m_hmcncp_? 675gW Y Ehpclihg_hn[f `lc_h^fs jli^o]n [p[cf[\f_
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675gW
E6889
CQC57556556
AaShO71
85VDC
chn 539
chn 537
chn 637
955 539 ic
cn 7555
XISO69556
kl 668
A5655
85VDC
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Untitled
Abstract: No abstract text available
Text: LD42_ _50 LD47_ _50 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SCR/Diode POW-R-BLOK Module 500 Amperes/1600 Volts OUTLINE DRAWING M10 THD M10 THD M10 THD M H K J R N A U U 4K 5G P 7K 6G LD42_ _50, LD47_ _50 SCR/Diode POW-R-BLOK™ Module
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Amperes/1600
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2SD976
Abstract: 2SD976A
Text: 2SD976,2SD976A V lJ =1 > NPN = S IL IC O N NPN T R IP L E D IF F U S E D _ T V 7k ¥ i i ì é 3ttì*ffi POW ER S W IT C H IN G T V H O R IZ O N T A L D E F L E C T IO N O U T P U T 1 . "< — X ! B a s e 2. ^ v -9 9 C o lle c to r 7 7 > V ( F la n g e )
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T0-220AB)
2SD976
2SD976A
2SD976
2SD976A
100mA,
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b1116a
Abstract: No abstract text available
Text: A ffig g i m _ s / 1 } D O N a Jì&£fe 0 Z Ó 8 2 0 PS N O . 2 94. 12. 2 1 3 5 1 6 0 3 95. 3 5 9 7 5 5. 1 C m s « f i m *e ' e a Ì I Ì É i s ì t *n 'M i TfT LU 7K S? — .— 4 1# ± O . 1 54 ±o. 1 4 7 .8 ± 0 .0 5 4 4 .6 OiD -H . in OCM om
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CDS-94-1
JC20-J68S-NB2
b1116a
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Untitled
Abstract: No abstract text available
Text: 19 STICK > ì) NOTES. L ^7~ yzfit&)o BOTH ENDS WI TH C A P S . 2 . M : 600±2 TOTAL LENGTH 3 „ r a jp : 0 „6 ± 0 „2 THICKNESS s < oc Q < CJ KTi I5 I80 5 3 4 8 6 - I809 C_) ÛC GENERAL TOLERANCES QUANTITY tin M ATERIAL :7KUMk£-JL 00 z o STICK 00
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JD7I383)
SD-53486-1809
90/I0IX)
0231S53486
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GV285
Abstract: WB2F ZX 27s GCYK RWV73 3183B kd-153 STRZ 37XE1 u286
Text: r B^bZch^dch r PeZX^[^XVi^dch K R GV9U27S Mlbga_rmp ? I AQU PZg^Zh Smucp amlqsknrgml GV9U?Ennpmv3 8Y1 GV9U27S?Ennpmv3 83:Y1 GV;U2M?Ennpmv3 73<Y1 GV;U?Ennpmv3 839Y1 GV;U27S?Ennpmv3 9Y1 GV;[2M?Ennpmv3 8Y1 GV;[?Ennpmv3 9Y1 GV;[27S?Ennpmv3 9Y -79XHG. GV9U?Ennpmv3 ;XE1 GV9U27S?Ennpmv3 <XE1 GV;U2M?Ennpmv3 :39XE1 GV;U?Ennpmv3 ;3=XE1
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GV9U27S
839Y1
-79XHG.
39XE1
-79XEG
22lll1Vjidc
IS2I2562589E
GV285
WB2F
ZX 27s
GCYK
RWV73
3183B
kd-153
STRZ
37XE1
u286
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W001
Abstract: No abstract text available
Text: SKM 800 GA 126 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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Dow Corning SI 340
Abstract: RPS 250
Text: RPS 250 Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • High power rating • High overload capability • Easy mounting • Low thermal radiation of the case Developed for specific applications such as railroad electrical traction, this series can bear short overloads
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20-Mar-02
Dow Corning SI 340
RPS 250
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sfernice RESISTOR RPS 250
Abstract: RPS 250
Text: RPS 250 Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • High power rating • High overload capability • Easy mounting • Low thermal radiation of the case Developed for specific applications such as railroad electrical traction, this series can bear short overloads as high as fifteen
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02-Mar-05
sfernice RESISTOR RPS 250
RPS 250
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