JARVIS Search Results

Contextual Info: Operation Manual Series MG3702xA RF/Microwave Signal Generators Fast Switching Microwave Signal Generator 100 µsec Switching Speed 10 MHz to 20 GHz Anritsu Company 490 Jarvis Drive Morgan Hill, CA 95037-2809 USA P/N: 10370-10370 Revision: D Printed: October 2013

Contextual Info: Measurement Guide Cable and Antenna Analyzer for Anritsu’s RF and Microwave Handheld Instruments BTS Master Anritsu Company 490 Jarvis Drive Morgan Hill, CA 95037-2809 USA http://www.anritsu.com Part Number: 10580-00230 Revision: B Published: September 2013

Contextual Info: Operation and Remote Programming Manual ML2437A / ML2438A Power Meter Anritsu Company 490 Jarvis Drive Morgan Hill, CA 95037-2809 USA http://www.anritsu.com Part Number: 10585-00001 Revision: N Published: June 2014 Copyright 2014 Anritsu Company WARRANTY The Anritsu product s listed on the title page is (are) warranted against defects in materials and

71514

Abstract: 60147 newport 215-3
Contextual Info: ERICSSON $ North American Sales Offices American Sales Region Ericsson Components, Inc. 675 Jarvis Drive Morgan Hill, CA 95037 USA Tel: +1 408 778-9434 Fax: +1 (408) 779-3108 Distributors Corporate Headquarters 40W267 Keslinger Road P.O. Box 393 LaFox, IL 60147-0393

9434

Abstract: transistor 1877 ADC 50 Ghz p 477 RF 1501 RF NPN POWER TRANSISTOR 3 GHZ 200 watts
Contextual Info: e PTB 20074 14 watts, 1.477–1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP

PTB 20245

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
Contextual Info: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is

resistor qbk

Contextual Info: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11

transistor rf m 9837

Contextual Info: e PTF 10114 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 12 watts power output. Nitride surface

e20231

Abstract: 20231 transistor E101
Contextual Info: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power

RF NPN POWER TRANSISTOR 3 GHZ 200 watts

Contextual Info: e PTB 20175 55 Watts, 1.9–2.0 GHz Cellular Radio RF Power Transistor Description The 20175 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55 watts minimum output power and may be used for both CW and PEP

PTB20152

Contextual Info: e PTB 20152 4 Watts, 340–465 MHz UHF Linear RF Power Transistor Description The 20152 is an NPN, common emitter RF power transistor intended for 20 Vdc class A operation from 340 to 465 MHz. Rated at 4 watts minimum output power, it may be used for both CW and PEP

ericsson 10159

Abstract: PTF10159 470-860 mhz Power amplifier w
Contextual Info: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power

mpx6115

Abstract: wheatstone bridge invasive blood pressure sensor AN1646 abstract for battery level indicator of lm3914 infusion pump pressure transducer ZO 607 TRIAC TRANSISTOR NPN, b2f piezo buzzer mtbf ABSTRACT FOR water level indicator using 4 led MPX5100
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Sensor Device Data Book DL200/D Rev. 5, 01/2003 WWW.MOTOROLA.COM/SEMICONDUCTORS For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. DATA CLASSIFICATION Product Preview

ADS1256

Abstract: Digital Weighing Scale PIC adc 12bit 5msps adc pic circuit diagram 2804 adc ADS1255 datasheet ads1255 OPA847 Stpd 2045 ultrasound transducer circuit driver 1mhz
Contextual Info: R E A L W O R L D S P I G N A L R O C E S S I N G ™ An Analog Product Catalog High-Speed / High-Performance ADCs 2 12-bit, 65MSPS ADC features fast, low-power operation for portable applications Fastest 16-bit, 5MSPS ∆∑ ADCs for imaging and test equipment

smoke alarm ic 555

Abstract: carbon monoxide detector dv2057 fujitsu polymer high power fet audio amplifier schematic SCHEMATIC POWER AUDIO MOSFET TPS61000EVM-156 UNIV-OPAMP Audio Power Amplifiers BQ2000 charger
Contextual Info: T H E W O R L D L E A D E R D S P I N A N A L O G A N D TM AN ANALOG AND MIXED-SIGNAL PRODUCT CATALOG this issue: Order the latest tools for wireless handset designs. See enclosed reply card for details. 4Q 2000 Internet-Ready Wireless Handsets Issue 1 Au d i o Po w e r

RF NPN POWER TRANSISTOR 3 GHZ 200 watts

Contextual Info: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

Contextual Info: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20181 is an NPN, common emitter RF power transistor intended for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP

IDG200

Contextual Info: ERICSSON $ PTE 10035* 30 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10035 is an internally matched common source n-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts minimum

Contextual Info: ERICSSON ^ PTB 20239 12 W a t t s , 1 4 6 5 - 1 5 1 3 M H z C e l l u l a r R a d i o RF P o w e r T r a n s i s t o r D escription The PTB 20239 is a class AB, NPN, common em itter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 12 watts minimum output power, it may be used for both CW

PTE10026

Contextual Info: E R IC SSO N í PTE 10026* 6 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation

IC 1820

Contextual Info: ERICSSON ^ PTB 20180 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

Contextual Info: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20095 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power, it may be used for

Contextual Info: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular Radio RF Power Transistor D escription The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for

ericsson rf

Contextual Info: ERICSSON ^ PTB 20008 10 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP