JAPANESE TRANSISTOR 2010 Search Results

JAPANESE TRANSISTOR 2010 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

JAPANESE TRANSISTOR 2010 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
vno300m Abstract: 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028 Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	100kQ 500MIh, 200MHz) 2SA103I5 vno300m 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028	PDF
2sa1066 Abstract: SVI 2004 138f SVI 2004 A 138D 2SA952 2SA953 2SA954 2SC1991 IFR 630 Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	200MHz) 2SA1066 27MHz, SVI 2004 138f SVI 2004 A 138D 2SA952 2SA953 2SA954 2SC1991 IFR 630	PDF
2SA571 Abstract: 2SC89 TRANSISTOR 318a 154B 352A EP-205 Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	100MHz 100MHz) 2SA571 2SC89 TRANSISTOR 318a 154B 352A EP-205	PDF
2sa467 Abstract: 2SC362 EL504 RF202 Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	930Mc 2sa467 2SC362 EL504 RF202	PDF
transistor 2sk Abstract: JAPANESE 2SC TRANSISTOR DATA BOOK 2010 JAPANESE 2SC TRANSISTOR 2010 JAPANESE TRANSISTOR 2SC DATA BOOK 2010 Transistor 2SA 2SB 2SC 2SD JAPANESE TRANSISTOR 2SC 2010 transistor 2SA data book C7012 JAPANESE TRANSISTOR 2SC data book transistors 2SA Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	REJ27G0001-0100Z/Rev transistor 2sk JAPANESE 2SC TRANSISTOR DATA BOOK 2010 JAPANESE 2SC TRANSISTOR 2010 JAPANESE TRANSISTOR 2SC DATA BOOK 2010 Transistor 2SA 2SB 2SC 2SD JAPANESE TRANSISTOR 2SC 2010 transistor 2SA data book C7012 JAPANESE TRANSISTOR 2SC data book transistors 2SA	PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	do-900 Unit2607	PDF
RENESAS marking code package Abstract: 2SC5700 HTT1213E smd transistor code B2 Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	d-900 Unit2607 RENESAS marking code package 2SC5700 HTT1213E smd transistor code B2	PDF
2SC5938A Abstract: RT3C99M Contextual Info: RT3C99M Composite Transistor For Muting Application Silicon Npn Epitaxial Type OUTLINE DRAWING Unit：mm 1.25 ① ⑥ 0.65 2.1 2SC5938A chips in SC-88 package. ② ⑤ 0.65 RT3C99M is compound transistor built with two ③ ④ FEATURE Silicon NPN epitaxial type	Original	RT3C99M 2SC5938A SC-88 RT3C99M JEITASC-88	PDF
rt3t77m Contextual Info: PRELIMINARY RT3T77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3T77M is compound transistor built with RT1N140 chip and RT1P140 chip in SC-88 package. FEATURE Silicon epitaxial type	Original	RT3T77M RT3T77M RT1N140 RT1P140 SC-88 JEITASC-88	PDF
RT3T66M Contextual Info: PRELIMINARY RT3T66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3T66M is compound transistor built with RT1N430 chip and RT1P430 chip in SC-88 package. FEATURE Silicon epitaxial type	Original	RT3T66M RT3T66M RT1N430 RT1P430 SC-88 JEITASC-88	PDF
rt3tssm Contextual Info: PRELIMINARY RT3TSSM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3TSSM is compound transistor built with RT1N150 chip and RT1P150 chip in SC-88 package. FEATURE Silicon epitaxial type	Original	RT1N150 RT1P150 SC-88 JEITASC-88 rt3tssm	PDF
Contextual Info: PRELIMINARY RT3TLLM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3TLLM is compound transistor built with RT1N230 chip and RT1P230 chip in SC-88 package. FEATURE Silicon epitaxial type	Original	RT1N230 RT1P230 SC-88 JEITASC-88	PDF
Contextual Info: RT3TTTM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3TTTM is compound transistor built with RT1N250 OUTLINE DRAWING Unit：mm chip and RT1P250 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.	Original	RT1N250 RT1P250 SC-88 JEITASC-88	PDF
M52461 Abstract: STR with 6pin 10PIN 11PIN 12PIN 13PIN M52461GP SSOP16-P-225-0 M5246 pulse stretcher circuit diagram Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF

RT3TFFM Contextual Info: PRELIMINARY RT3TFFM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3TFFM is compound transistor built with RT1N431 chip and RT1P431 chip in SC-88 package. FEATURE Silicon epitaxial type	Original	RT1N431 RT1P431 SC-88 JEITASC-88 RT3TFFM	PDF
Contextual Info: PRELIMINARY RT3TBBM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3TBBM is compound transistor built with RT1N231 chip and RT1P231 chip in SC-88 package. FEATURE Silicon epitaxial type	Original	RT1N231 RT1P231 SC-88 JEITASC-88	PDF
RT3T11M Abstract: Isahaya Electronics RT1N141 RT1P141 Contextual Info: PRELIMINARY RT3T11M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3T11M is compound transistor built with RT1N141 chip and RT1P141 chip in SC-88 package. FEATURE Silicon epitaxial type	Original	RT3T11M RT3T11M RT1N141 RT1P141 SC-88 JEITASC-88 Isahaya Electronics RT1N141	PDF
Isahaya Electronics Abstract: RT1P144 RT3T14M Contextual Info: PRELIMINARY RT3T14M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3T14M is compound transistor built with RT1N144 chip and RT1P144 chip in SC-88 package. FEATURE Silicon epitaxial type	Original	RT3T14M RT3T14M RT1N144 RT1P144 SC-88 JEITASC-88 Isahaya Electronics	PDF
RT1P441 Abstract: RT3T33M Contextual Info: PRELIMINARY RT3T33M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3T33M is compound transistor built with RT1N441 chip and RT1P441 chip in SC-88 package. FEATURE Silicon epitaxial type	Original	RT3T33M RT3T33M RT1N441 RT1P441 SC-88 JEITASC-88	PDF
Contextual Info: PRELIMINARY RT3TAAM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3TAAM is compound transistor built with RT1N151 chip and RT1P151 chip in SC-88 package. FEATURE Silicon epitaxial type	Original	RT1N151 RT1P151 SC-88 JEITASC-88	PDF
Contextual Info: RT3YA7M Composite Transistor For Muting Application DESCRIPTION OUTLINE DRAWING RT3YA7M is a composite transistor built with RT1P140 and Unit：mm two muting transistor with resistor in SC-88 package. FEATURE ・RT3YA7M is built in RTr1 side RT1P140,and RTr2,RTr3 side	Original	RT1P140 SC-88 JEITASC-88	PDF
Contextual Info: PRELIMINARY RT3TDDM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3TBBM is compound transistor built with RT1N237 chip and RT1P237 chip in SC-88 package. FEATURE Silicon epitaxial type	Original	RT1N237 RT1P237 SC-88 JEITASC-88	PDF
RT1P436 Contextual Info: RT3THHM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3THHM is compound transistor built with RT1N436 OUTLINE DRAWING Unit：mm chip and RT1P436 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.	Original	RT1N436 RT1P436 SC-88 JEITASC-88	PDF
RT3T22M Abstract: RT1N241 Contextual Info: PRELIMINARY RT3T22M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3T22M is compound transistor built with RT1N241 and RT1P241 in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.	Original	RT3T22M RT3T22M RT1N241 RT1P241 SC-88 JEITASC-88 RT1N241	PDF

JAPANESE TRANSISTOR 2010 Search Results

JAPANESE TRANSISTOR 2010 Result Highlights (5)

JAPANESE TRANSISTOR 2010 Datasheets Context Search

vno300m

2sa1066

2SA571

2sa467

transistor 2sk

RENESAS marking code package

2SC5938A

rt3t77m

RT3T66M

rt3tssm

M52461

RT3TFFM

RT3T11M

Isahaya Electronics

RT1P441

RT1P436

RT3T22M