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    JANTX 2N6352 Price and Stock

    Microchip Technology Inc JANTX2N6352

    TRANS NPN DARL 80V 5A TO66
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    Microchip Technology Inc JANTX2N6352 173 22 Weeks
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    NAC JANTX2N6352 Tray 50
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    Avnet Silica JANTX2N6352 24 Weeks 50
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    Microchip Technology Inc JANTX2N6352P

    NPN TRANSISTOR
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    Microchip Technology Inc JANTX2N6352P 22 Weeks
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    Microchip Technology Inc Jantx2N6352

    Darlington Transistors Power BJT
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    Microchip Technology Inc JANTXV2N6352P

    Bipolar Transistors - BJT Power BJT
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    NES JANTX2N6352

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    Bristol Electronics JANTX2N6352 5 1
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    Quest Components JANTX2N6352 1
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    JANTX 2N6352 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    JANTX2N6352 Microsemi TRANS DARLINGTON NPN 80V 5A 3TO-213AA Original PDF
    JANTX2N6352 Unitrode International Semiconductor Data Book 1981 Scan PDF
    JANTX 2N6352 Unitrode International Semiconductor Data Book 1981 Scan PDF

    JANTX 2N6352 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6350

    Abstract: 1000C 2N6351 2N6352 2N6353 JANTX 2N6351
    Text: TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices Qualified Level 2N6350 2N6351 2N6352 JAN JANTX JANTXV 2N6353 MAXIMUM RATINGS Symbol 2N6350 2N6352 2N6351 2N6353 Units Collector-Emitter Voltage Collector-Base Voltage


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    MIL-PRF-19500/472 2N6350 2N6351 2N6352 2N6353 2N6350 1000C 2N6351 2N6352 2N6353 JANTX 2N6351 PDF

    2N6353

    Abstract: rb1-e 2N6352
    Text: TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices Qualified Level 2N6350 JAN JANTX JANTXV 2N6351 2N6352 2N6353 MAXIMUM RATINGS Symbol 2N6350 2N6352 2N6351 2N6353 Units Collector-Emitter Voltage Collector-Base Voltage


    Original
    MIL-PRF-19500/472 2N6350 2N6351 2N6352 2N6353 2N6352 2N6353 rb1-e PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-213AA


    Original
    2N6352 2N6353 MIL-PRF-19500/472 O-213AA T4-LDS-0315, PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. Important: For the latest information, visit our website http://www.microsemi.com.


    Original
    2N6352 2N6353 MIL-PRF-19500/472 O-213AA T4-LDS-0315, PDF

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


    Original
    MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6352+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80ã V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.2.0k


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    2N6352 Freq50M PDF

    2N6350 equivalent

    Abstract: 2N6352 2N6351 2N6353 2N6350 JANTX 2N6351 JAN 2N6351
    Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 January 2007. MIL-PRF-19500/472E 9 October 2007 SUPERSEDING MIL-PRF-19500/472D 9 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON,


    Original
    MIL-PRF-19500/472E MIL-PRF-19500/472D 2N6350, 2N6351, 2N6352, 2N6353, MIL-PRF-19500. 2N6350 equivalent 2N6352 2N6351 2N6353 2N6350 JANTX 2N6351 JAN 2N6351 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bipolar Darlington Transistors Page 1 of 2 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE (min/max @ A/V) VCE(sat)@ IC/IB (V@A/A) COB pF fT MHZ PNP TO-3/204AA 2N6050 60 12 750/18000@6/3 2.0@6/.024 500 4.0 PNP TO-3/204AA 2N6051 * 80


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    2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6282 2N6283 2N6284 2N6285 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/ WATERTOlilN WT'iba 00124^ 5DE D POWER DARLINGTONS JAN, JAN, JAN, JAN, 5 Amp, 150V, NPN JANTX JANTX JANTX JANTX 07b & JANTXV & JANTXV & JANTXV & JANTXV IUNIT 2N6350 2N6351 2N6352 2N6353 /FEATURES DESCRIPTION • • • • Unitrode NPN Darltngtons consist of a


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    2N6350 2N6351 2N6352 2N6353 MIL-S-19500/472 2N6350 PDF

    2N6350

    Abstract: 2N6351 2N6353 2N6352 JANTX 2N6351 2N635 JANTX 2N6352 r6e2 JANTX 2n ze 003 ic
    Text: JAN JAN JAN JAN POWER DARLINGTONS 5 Amp, 150V, NPN & JANTX & JANTX & JANTX & JANTX 2N6350 2N6351 2N6352 2N6353 D E S C R IP T IO N FEATURES • H igh Current Gain: up to 2000 min. @ lc = 5A • Low Saturation Voltage: as low as 1.5V max. @ lc = 2A • Peak Current: to 10A


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    2N6350 2N6351 2N6352 2N6353 MIL-S-19500/472 2N6351 2N6353 JANTX 2N6351 2N635 JANTX 2N6352 r6e2 JANTX 2n ze 003 ic PDF

    2N6350

    Abstract: No abstract text available
    Text: JAN, JAN, JAN, JAN, POWER DARLINGTONS 5 Amp, 150V, NPN JANTX JANTX JANTX JANTX & & & & JANTXV JANTXV JANTXV JANTXV 2N6350 2N6351 2N6352 2N6353 DESCRIPTION U n itro d e N P N D a riin g ton s co n sist of a two tra n sisto r c ir c u it on a sin gle m o n o lith ic plan ar ch ip. The 2N6350


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    2N6350 2N6351 2N6352 2N6353 2N63S2 2N6350 2NS35I PDF

    2H2904

    Abstract: 2NI483-86
    Text: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879


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    2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714- 2N1722 2N1724 2N2015 2H2904 PDF

    472 M

    Abstract: MIL-S-19500 2N3055 JANTX
    Text: Summary List of API Q.P.L. Directory Types 2N2812 - JAN, JAN-TX, JAN-TXV 2N2814 - JAN, JAN-TX, JAN-TXV M IL-S-19500/415 MIL-S-19500/415 2N2880 - JAN. JAN-TX, JAN-TXV 2N3749 - JAN. JAN-TX, JAN-TXV M IL-S-19500/315 MIL-S-19500/315 2N3055 - JAN. JAN-TX, JAN-TXV


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    2N2812 2N2814 2N2880 2N3749 2N3055 2N3418 2N34I9 2N3420 2N3421 2N3442 472 M MIL-S-19500 2N3055 JANTX PDF

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


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    Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier PDF

    TO-213

    Abstract: 2N6297 WF24 2N6351
    Text: A POW ERHOUSE BIPOLAR TO-33 w b v CEO VOLTS PEAK >C AMPS hFE min/max < < o m D E /ICE TYPE PACKAGE o N PN D A R L IN G T O N POW ER T R A N S IS T O R S VCE sat max VOLTS •c @ !b A A 2N6350* 80 5.0 2000 1.0/5.0 1.5 5.0/0.005 2N6351* 150 5.0 1000 1.0/5.0


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    2N6350* 2N6351* O-213/ 2N6352* 2N6353* 2N6300* 2N6301* O-204/TO-3 2N6383* 2N6384* TO-213 2N6297 WF24 2N6351 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS PNP TO-66 2N6298A 60 8.0 2N6299A 80 2N6648A 1*FE @ ^c/ ^CE min/max @ A/V VcE(Ml) @ I c/I b V @ A/A c <p P fr (MHz) 750/18000@6/3 2.0@4/.016 300


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    2N6298A 2N6299A 2N6648A 2N6649A 2N6650A 2N6300A 2N6301A 2N6383SISTOR PDF

    2N6649A

    Abstract: 2N63 2n6301a 2n6353a
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS PNP TO-66 2N6298A 60 2N6299A @ Ic/ ^ C E min/max @ A/V VcE(Mt) @ I c/I b V @ A/A c <p P fx (MHz) 8.0 750/18000@6/3 2.0@4/.016 300 4.0 80 8.0 750/18000@6/3


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    2N6298A 2N6299A 2N6648A 2N6649A 2N6650A 2N6300A 2N6301A 2N6383A 2N6385A 2N6352A 2N63 2n6353a PDF

    UFN540

    Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
    Text: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist­ ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State


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    U2TA506 U2TA508 U2TA510 861-6S40 UFN540 UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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