Untitled
Abstract: No abstract text available
Text: FTS512K8L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 600 mil Plastic and Ceramic DIP —32-Pin 445 mil SOP —32-Pin TSOP II
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FTS512K8L
--32-Pin
FTS512512K8L
Oct-05
Nov-06
Dec-06
May-07
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1519b
Abstract: No abstract text available
Text: FTS512K8/FTS512K8L HIGH SPEED 512K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —36-Pin SOJ 400 mil —36-Pin FLATPACK —36-Pin LCC (452 mil x 920 mil) High Speed (Equal Access and Cycle Times)
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FTS512K8/FTS512K8L
--36-Pin
FTS512K8
512Kx8.
Oct-05
Jan-08
SRAM128
1519b
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PDF
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HWS300-24HD
Abstract: HWS100 HWS150 HWS1500 HWS300 HWS50 HWS600
Text: INNOVATION SOLUTIONS SUPPORT RELIABILITY • Lifetime Warranty • -10 to +71°C Operation -40°C start up • Universal Input (85 - 265VAC) • Conformally coated PCB’s • RoHS Compliant Design Key Market Segments & Applications Factory Automation: Test & Measurement:
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265VAC)
50-1500/HD
HWS50
HWS100
HWS150
HWS300
HWS600
HWS1500
47-63Hz)
265VAC
HWS300-24HD
HWS100
HWS150
HWS1500
HWS300
HWS50
HWS600
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PDF
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HWS300
Abstract: HWS50 HWS600 HWS100 HWS150 HWS1500 nemic lambda 36V Lambda Electronics 1500
Text: INNOVATION SOLUTIONS SUPPORT RELIABILITY • Lifetime Warranty • Medical Approvals • Universal Input 85 - 265VAC • High Efficiency • Broad 30W to 1500W product range • RoHS Compliant Design HWS30-1500/ME Series Key Market Segments & Applications
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265VAC)
HWS30-1500/ME
100/200VAC
HWS100
HWS150
265VAC
or28/130,
SE-184
Jan08
HWS300
HWS50
HWS600
HWS100
HWS150
HWS1500
nemic lambda 36V
Lambda Electronics 1500
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PDF
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6198A
Abstract: No abstract text available
Text: FT6198 L FT6198A(L) Ultra High Speed 16K x 4 Static CMOS Ram FEATURES Output Enable & Chip Enable Control Functions – Single Chip Enable FT6198 – Dual Chip Enable FT6198A Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)
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FT6198
FT6198A
FT6198L/FT6198AL
FT6198
24-Pin
28-Pin
FT6198/L
FT6198A/L
6198A
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PDF
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Untitled
Abstract: No abstract text available
Text: FT6163/FT6163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAM FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current FT6163L Military Common I/O Fully TTL Compatible Inputs and Outputs Standard Pinout (JEDEC Approved) – 28-Pin 300 mil DIP, SOJ – 28-Pin 350 x 550 mil LCC
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FT6163/FT6163L
25/35ns
25/35/45ns
FT6163L
28-Pin
FT6163
728-bit
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PDF
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MA-406
Abstract: AK8126 AKD0548-E-00 AKD8126 MA406 MSOP10
Text: ASAHI KASEI EMD CORPORATION Evaluation Board for AK8126 AKD8126 Description Ordering guide The AKD8126 is an evaluation board for spread spectrum clock generator, AK8126. Therefore, it is possible to evaluate spectrum characteristics and other performances.
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AK8126
AKD8126
AKD8126
AK8126.
AKD0548-E-00
Jan-08
MA-406
AK8126
AKD0548-E-00
MA406
MSOP10
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PDF
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transistor 13003d
Abstract: 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a
Text: ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer LIMMITING VALUES Tj=25℃ Unless OtherWise Stated Parameter Symbol Value
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Jul-09
13003F
transistor 13003d
13003D
13003a
13003a TRANSISTOR
13003F
13003C
transistor 13003F
13003c TRANSISTOR
13003E
S W 13003a
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GBJ15A
Abstract: GBJ15B GBJ15D GBJ15G GBJ15J GBJ15K GBJ15M
Text: GBJ15A THRU GBJ15M Glass Passivated Bridge Rectifier YENYO Voltage Range 50 to 1000 V Current 15.0 Ampere Features ¬ Plastic package has Underwriters GBJ Laboratory Flammability Classification 94V-0 ¬ High surge current capability .118 3.0 x45 Ideal for printed circuit boards
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GBJ15A
GBJ15M
MIL-STD-202,
300uS
50mVp-p
Jan-08
GBJ15B
GBJ15D
GBJ15G
GBJ15J
GBJ15K
GBJ15M
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PDF
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AK8130B
Abstract: quartz kds
Text: ASAHI KASEI EMD CORPORATION Evaluation Board for AK8130 AKD8130 Ordering guide Description The AKD8130 is an evaluation board for AK8130 clock generator family. Therefore, it is easy to evaluate the jitters and VCXO performance. 4 types of boards are prepared depending on
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AK8130
AKD8130
AKD8130
AKD813X
AK8130A
AK8130B
AK8130
AK8130B
quartz kds
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PDF
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L431
Abstract: NIKO-SEM circuit diagram for voltage regulator G as431 P3055 TL431 5.0v TO-92 L431M3B lm431 Adjustable Precision Shunt Regulator SC431
Text: 2.5V Low-Voltage Adjustable Precision Shunt Regulator NIKO-SEM L431 GENERAL DESCRIPTION FEATURES The L431 is a three-terminal adjustable shunt regulator utilizing an accurate 2.5V band-gap reference. The output voltage can be set to any value between 2.5V VREF to 29V with two
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JAN-08-Y02
OT-23
L431
NIKO-SEM
circuit diagram for voltage regulator G
as431
P3055
TL431 5.0v TO-92
L431M3B
lm431
Adjustable Precision Shunt Regulator
SC431
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PDF
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Nemic-Lambda 8 15V ES
Abstract: Densei-Lambda hws150-24/a circuit HWS30-24 HWS50 HWS50-12/A HWS50-24/A POWER NEMIC Lambda Nemic-Lambda datasheet HWS100-15 HWS100-24
Text: INNOVATION SOLUTIONS SUPPORT RELIABILITY • Lifetime Warranty • UL508 approved • SEMI F47 Compliant high line AC • Universal Input (85 - 265VAC) • High Efficiency • RoHS Compliant Design Key Market Segments & Applications Factory Automation HWS Series
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UL508
265VAC)
SE-184
5-150W)
Jan08
Nemic-Lambda 8 15V ES
Densei-Lambda hws150-24/a circuit
HWS30-24
HWS50
HWS50-12/A
HWS50-24/A
POWER NEMIC Lambda
Nemic-Lambda
datasheet HWS100-15
HWS100-24
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NIKO-SEM
Abstract: p3055l 7L431 l431 LM431 SOIC8 Niko circuit diagram for voltage regulator G P3055 TL431 SOT-23 AS431
Text: 2.5V Low-Voltage Adjustable Precision Shunt Regulator NIKO-SEM L431 GENERAL DESCRIPTION FEATURES The L431 is a three-terminal adjustable shunt regulator utilizing an accurate 2.5V band-gap reference. The output voltage can be set to any value between 2.5V VREF to 29V with two
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JAN-08-Y02
OT-23
NIKO-SEM
p3055l
7L431
l431
LM431 SOIC8
Niko
circuit diagram for voltage regulator G
P3055
TL431 SOT-23
AS431
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PDF
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P2003
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM34419AA-N •General description ■Features ELM34419AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-10A Rds(on) < 20mΩ (Vgs=-10V) Rds(on) < 35mΩ (Vgs=-4.5V)
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ELM34419AA-N
ELM34419AA-N
temper10m
Jan-08-2009
P2003
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Untitled
Abstract: No abstract text available
Text: P4C1049/P4C1049L HIGH SPEED 512K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —36-Pin SOJ 400 mil —36-Pin FLATPACK —36-Pin LCC (452 mil x 920 mil) High Speed (Equal Access and Cycle Times)
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P4C1049/P4C1049L
--36-Pin
P4C1049
512Kx8.
SRAM128
P4C1049
Oct-05
Jan-08
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PDF
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Untitled
Abstract: No abstract text available
Text: A B C D E G F H REVISIONS 4.50 .177 1 24.00 .945 DESCRIPTION, ECN, EAR NO. DATE APP'D A PRODUCT DRAWING EAR 13977 FEB26/13 KL DATE CODE INK MARKING 2.50 .098 1 RUGGED 8 OR 10 POSITION RECEPTACLE 16.70±0.25 .657±.010 18.00±0.25 .709±.010 9.00 .354 REV
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FEB26/13
JAN08/13
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BAS70-07W
Abstract: Q62702-A1186 Q62702-A118 marking 77s
Text: BAS70-07W Silicon Schottky Diodes Preliminary data • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detection and mixing ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
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BAS70-07W
Q62702-A1186
OT-343
Jan-08-1997
BAS70-07W
Q62702-A1186
Q62702-A118
marking 77s
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PDF
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180-nm CMOS standard cell library inverter
Abstract: 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130nm 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201
Text: Fujitsu @ 65nm: Providing Solutions through Integrated Design Services The Fujitsu Advantage…Not Just a Foundry Contents Benefits of leading-edge technology at 65nm Challenges Solutions Fujitsu Microelectronics America, Inc. 2 FSA Semiconductor Forum, June 14, 2006
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130nm
180-nm CMOS standard cell library inverter
130 nm CMOS standard cell library
45-nm CMOS standard cell library process technology
45 nm library
CS200A
130-nm CMOS standard cell library inverter
S/130 nm CMOS standard cell library
SEM 2006
CS201
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PDF
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Q62702-B683
Abstract: No abstract text available
Text: BB 619C Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV/ VTR tuners Type Marking Ordering Code Pin Configuration Package BB 619C yellow S Q62702-B683 1=C SOD-123 2=A Maximum Ratings Parameter Symbol Values Diode reverse voltage
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Q62702-B683
OD-123
Jan-08-1997
Q62702-B683
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PDF
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Q62702-B580
Abstract: No abstract text available
Text: BB 535 Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance Type Marking Ordering Code Pin Configuration Package BB 535 white S 1=C SOD-323 Q62702-B580 2=A Maximum Ratings Parameter Symbol Values
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OD-323
Q62702-B580
Jan-08-1997
CTA/C25
Q62702-B580
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PDF
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Untitled
Abstract: No abstract text available
Text: FT61256 L HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK
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FT61256
--28-Pin
--32-Pin
144-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: FT6168,FT6169,FT6170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (FT6168 Military) Three Options
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FT6168
FT6169
FT6170
12/15/20/25/35ns
20/25/35/45/55/70ns
FT6168
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PDF
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Untitled
Abstract: No abstract text available
Text: FT61024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply
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FT61024
--32-Pin
FT61024
576-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: FT6175 HIGH SPEED 8Kx8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)
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FT6175
FT6175
Oct-05
Nov-05
Jan-08
SRAM118
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