KDW2521C
Abstract: s277
Text: IC IC SMD Type Complementary PowerTrench MOSFET KDW2521C Features TSSOP-8 Unit: mm N-Channel 5.5 A, 20 V RDS ON = 21m RDS(ON) = 35m @ VGS = 4.5 V @ VGS =2.5V P-Channel -3.8 A, 20 V RDS(ON) = 43 m RDS(ON) = 70 m @ VGS =- 4.5 V @ VGS =-2.5V High performance trench technology for extremely low RDS(ON)
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KDW2521C
KDW2521C
s277
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TO-252-4L
Abstract: mtc210 To-252-4
Text: Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 1/11 CYStech Electronics Corp. N & P-Channel Enhancement Mode Power MOSFET MTC2103BJ4 Features N-CH P-CH BVDSS 30V -30V ID 8A -6A 21mΩ 45mΩ RDSON MAX • Low Gate Charge • Simple Drive Requirement
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C448J4
MTC2103BJ4
O-252-4L
UL94V-0
TO-252-4L
mtc210
To-252-4
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N3018SS
Abstract: N3018
Text: DMN3018SSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 21mΩ @ VGS = 10V 7.3A 35mΩ @ VGS = 4.5V 5.5A V(BR)DSS NEW PRODUCT ADVANCE INFORMATION Features and Benefits • 30V Low On-Resistance
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DMN3018SSS
AEC-Q101
DS35501
N3018SS
N3018
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET common drain ELM18822BA-S •General description ■Features ELM18822BA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • • • Vds=20V Id=7A (Vgs=10V) Rds(on) < 21mΩ (Vgs=10V) Rds(on) < 24mΩ (Vgs=4.5V)
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ELM18822BA-S
ELM18822BA-S
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET common drain ELM18822BA-S •General description ■Features ELM18822BA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • • • Vds=20V Id=7A (Vgs=10V) Rds(on) < 21mΩ (Vgs=10V) Rds(on) < 24mΩ (Vgs=4.5V)
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ELM18822BA-S
ELM18822BA-S
curr25Â
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290908
Abstract: No abstract text available
Text: Europe: +49 / 7731 8399 0 | Email: info@meder.com Artikel Nr.: USA: +1 / 508 295 0771 | Email: salesusa@meder.com Asia: +852 / 2955 1682 | Email: salesasia@meder.com 3212272221 Artikel: DIP12-2A72-21M Spulendaten bei 20 °C Spulenwiderstand Spulenspannung
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DIP12-2A72-21M
P12-2A72-21M
290908
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ZXTN19020DZTA
Abstract: TS16949 ZXTN19020DZ ZXTP19020DZ
Text: ZXTN19020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 7.5A VCE(sat) < 35mV @ 1A RCE(sat) = 21m⍀ PD = 2.4W Complementary part number ZXTP19020DZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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ZXTN19020DZ
ZXTP19020DZ
D-81541
ZXTN19020DZTA
TS16949
ZXTN19020DZ
ZXTP19020DZ
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Untitled
Abstract: No abstract text available
Text: ZXTP19020CFF 20V, SOT23F, PNP medium power transistor Summary: BVCEO > -20V BVECO > -5V IC cont = -5A VCE(sat) < 40mV @ 100mA RCE(sat) = 21m⍀ PD = 1.5W Complementary part number ZXTN19020CFF Description C Advanced process capability has been used to maximize the
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ZXTP19020CFF
OT23F,
100mA
ZXTN19020CFF
OT23F
D-81541
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Untitled
Abstract: No abstract text available
Text: ZXTN19020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 7.5A VCE(sat) < 35mV @ 1A RCE(sat) = 21m⍀ PD = 2.4W Complementary part number ZXTP19020DZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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ZXTN19020DZ
ZXTP19020DZ
D-81541
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TRANSISTOR MARKING 1d7
Abstract: TS16949 ZXTN19020CFF ZXTP19020CFF ZXTP19020CFFTA zetex 749
Text: ZXTP19020CFF 20V, SOT23F, PNP medium power transistor Summary: BVCEO > -20V BVECO > -5V IC cont = -5A VCE(sat) < 40mV @ 100mA RCE(sat) = 21m⍀ PD = 1.5W Complementary part number ZXTN19020CFF Description C Advanced process capability has been used to maximize the
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ZXTP19020CFF
OT23F,
100mA
ZXTN19020CFF
OT23F
D-81541
TRANSISTOR MARKING 1d7
TS16949
ZXTN19020CFF
ZXTP19020CFF
ZXTP19020CFFTA
zetex 749
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Untitled
Abstract: No abstract text available
Text: DMG3420U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) max ID max TA = +25°C • Low On-Resistance Low Input Capacitance 21m @ VGS = 10V 6.5A Fast Switching Speed 5.2A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
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DMG3420U
AEC-Q101
DS31867
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification KDD6030L @ VGS = 4.5 V +0.2 9.70-0.2 +0.1 0.80-0.1 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 0.127 max 3.80 RDS(ON) = 21m Low gate charge +0.8 0.50-0.7
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KDD6030L
O-252
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1b.1 smd transistor
Abstract: 1b smd transistor smd diode JC 7 SMD Transistor nc KDD6030L
Text: Transistors IC SMD Type 30V N-Channel Power Trench MOSFET KDD6030L @ VGS = 4.5 V +0.2 9.70-0.2 +0.1 0.80-0.1 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3.80 RDS(ON) = 21m Low gate charge
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KDD6030L
O-252
1b.1 smd transistor
1b smd transistor
smd diode JC 7
SMD Transistor nc
KDD6030L
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ELM18822BA
Abstract: No abstract text available
Text: 双 N 沟道共漏极 MOSFET ELM18822BA-S •概要 ■特点 ELM18822BA-S 是 N 沟道低输入电容低工作电压、 •Vds=20V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=7A Vgs=10V ·Rds(on) < 21mΩ (Vgs=10V) ·Rds(on) < 24mΩ (Vgs=4.5V)
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ELM18822BA-S
ELM18822BA
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40n03
Abstract: MTN40N03 MTN40N03J3 40n0 mosfet 30V 18A TO 252 C381J3
Text: Spec. No. : C381J3 Issued Date : 2007.06.12 Revised Date :2009.02.04 Page No. : 1/8 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN40N03J3 BVDSS ID RDSON 30V 36A 21mΩ Features • Dynamic dv/dt Rating • Simple Drive Requirement • Repetitive Avalanche Rated
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C381J3
MTN40N03J3
O-252
UL94V-0
40n03
MTN40N03
MTN40N03J3
40n0
mosfet 30V 18A TO 252
C381J3
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Untitled
Abstract: No abstract text available
Text: LMH6321 www.ti.com SNOSAL8C – APRIL 2006 – REVISED MARCH 2013 LMH6321 300 mA High Speed Buffer with Adjustable Current Limit Check for Samples: LMH6321 FEATURES DESCRIPTION • • • • • • • • • The LMH6321 is a high speed unity gain buffer that
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LMH6321
LMH6321
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Untitled
Abstract: No abstract text available
Text: FDS5682 N-Channel PowerTrench MOSFET 60V, 7.5A, 21mΩ Features General Description ̈ rDS ON = 21mΩ, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS5682
FDS5682
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KP108
Abstract: FDS5682 MOSFET 60V 75A
Text: FDS5682 N-Channel PowerTrench MOSFET 60V, 7.5A, 21mΩ Features General Description rDS ON = 21mΩ, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS5682
FDS5682
KP108
MOSFET 60V 75A
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NL103
Abstract: MOSFET 60V 75A KP108 KP004
Text: FDS5682 N-Channel PowerTrench MOSFET 60V, 7.5A, 21mΩ Features General Description rDS ON = 21mΩ, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS5682
NL103
MOSFET 60V 75A
KP108
KP004
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TL1451A
Abstract: tl1451cn TL1451 TL1451CNS TL1451ACN AFL 5PIN 100S HA17451 S25C 1451a
Text: - 402 - TL1451, TL1451A ^ ;u x t s $ i J i ï q ? j  < ^ X 'f • 1/Ÿ ^ u — • j l- 'j 'f • u= ¥- 5=' a. t j u ja - jfflË S ïg - c , 2 m t « D R iit s s j ■  * / Ë fë 41V 41V [ n i / ? ? f], T L 1451) 51V [ J l / 7 ? Ü J * , T L 1451A)
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TL1451,
TL1451A
500kHz
TL1451A)
40Vmax
TL1451
SE---20mA
100kQ
150pF
15000pF
tl1451cn
TL1451
TL1451CNS
TL1451ACN
AFL 5PIN
100S
HA17451
S25C
1451a
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TL1451A
Abstract: TL1451 HA17451
Text: - T 402 L 1 - 4 5 1 , T L 1 4 5 1 A ^ ;u x ts $ iJ iïq ? j  < ^ X 'f • j l - ' j ' f • u = ¥ - • 1 / Ÿ ^ u — 5 =' ja -jfflË S ïg -c , 2 m t« D R iits s j a. t j u ■  * /Ë fë 41V 41V [ n i / ? ? f], TL1451) lo U T 51V [ J l / 7 ? Ü J * ,T L 1 4 5 1 A )
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OCR Scan
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TL1451,
TL1451A
500kHz
TL1451A)
40Vmax
TL1451
SE---20mA
100kQ
150pF
15000pF
TL1451
HA17451
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MF53
Abstract: No abstract text available
Text: 0.6 3 .1 0 .1 2 3 " 0 . 0 2 4 ”' Shrinking tube with serial number of assembly 21MXP II 16 x 11SK connector face .— * Is Ì& I* r Ì SK #1 SNXXXXXX SK # 2 SK # 3 CM S3 & £ IICIV « s! « ^ 1 1 § l! s s His, 1 8 .5 • §ci r* 0 .7 2 8 " §£ | I|S S
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OCR Scan
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21MXP
MF53/2x8A
MXP/11SK/152
MXP/11SK/229
MXP/11SK/305
MXP/11SK/610
MF53
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ESJA56-24
Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Text: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250
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OCR Scan
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ESJA56-24
ESJA57-03
ESJA57-04
ESJA58-06
ESJA58-08
ESJA82-12
ESJA83-16
ESJA83-18
ESJA83-20
ESJA86-24
ESJA58-08
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10100N
Abstract: 1825 - 0148
Text: Philips Components 10100 Document No. 8 5 3 -0 6 3 6 ECN No. 9 9799 D ate of Issue June 14, 1990 Status Product Specification Gate Quad 2-lnput NOR Gate with Strobe ECL Products ORDERING INFORMATION FEATURES • Typical propagation delay: 2.0ns • Typical supply current —lEE : 21mA
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16-Pin
10100N
10100N
1825 - 0148
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