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    J250 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    OPA336NJ/250 Texas Instruments Single-Supply, MicroPower CMOS Operational Amplifiers MicroAmplifier™ Series 5-SOT-23 -40 to 85 Visit Texas Instruments Buy
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    J250 Price and Stock

    TDK Corporation C3225C0G2E473J250AA

    CAP CER 0.047UF 250V C0G 1210
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    DigiKey C3225C0G2E473J250AA Cut Tape 52,098 1
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    C3225C0G2E473J250AA Digi-Reel 52,098 1
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    C3225C0G2E473J250AA Reel 51,000 1,000
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    Avnet Americas C3225C0G2E473J250AA Reel 24 Weeks 1,000
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    TTI C3225C0G2E473J250AA Reel 337,000 1,000
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    TME C3225C0G2E473J250AA 1,000
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    Avnet Abacus C3225C0G2E473J250AA 33 Weeks 1,000
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    Chip1Stop C3225C0G2E473J250AA Cut Tape 350
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    Syfer Technology 1206J2503P90BCT

    CAP CER 3.9PF 250V C0G/NP0 1206
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    DigiKey 1206J2503P90BCT Cut Tape 7,480 1
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    1206J2503P90BCT Digi-Reel 7,480 1
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    1206J2503P90BCT Reel 5,000 2,500
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    United Chemi-Con Inc HHXJ250ARA181MF80G

    CAP ALUMHYB 180UF 20% 25V SMD
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    DigiKey HHXJ250ARA181MF80G Digi-Reel 2,603 1
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    HHXJ250ARA181MF80G Cut Tape 2,603 1
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    HHXJ250ARA181MF80G Reel 1,800 900
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    Mouser Electronics HHXJ250ARA181MF80G 1,135
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    TDK Corporation CGA6P4C0G2W333J250AE

    CAP CER .033UF 450V C0G/NP0 1210
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    DigiKey CGA6P4C0G2W333J250AE Cut Tape 1,439 1
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    CGA6P4C0G2W333J250AE Digi-Reel 1,439 1
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    CGA6P4C0G2W333J250AE Reel 1,000 1,000
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    Avnet Americas CGA6P4C0G2W333J250AE Reel 24 Weeks 1,000
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    Newark CGA6P4C0G2W333J250AE Cut Tape 954 1
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    United Chemi-Con Inc KTJ250B476M76AFT00

    CAP CER 47UF 25V X7R SMD
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    DigiKey KTJ250B476M76AFT00 Cut Tape 1,175 1
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    KTJ250B476M76AFT00 Digi-Reel 1,175 1
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    Master Electronics KTJ250B476M76AFT00
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    J250 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    110 IDC

    Abstract: Cat3
    Text: POST MINI CAT3 JACK 8 POSITIONS 4 CONDUCTORS IVORY part number: 300-j2506/IV pg. 1 APPROVALS: MARKETING TECHNICAL SALES FINAL DATE: THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO VERTICAL CABLE AND MAY NOT BE DISCLOSED OR TRANSMITTED TO ANY OTHER


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    300-j2506/IV 10Base-T 100VG-Any 110 IDC Cat3 PDF

    DS493

    Abstract: No abstract text available
    Text: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP


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    mini jack

    Abstract: No abstract text available
    Text: POST MINI CAT3 JACK 8 POSITIONS 4 CONDUCTORS WHITE part number: 300-j2507/WH pg. 1 APPROVALS: MARKETING TECHNICAL SALES FINAL DATE: THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO VERTICAL CABLE AND MAY NOT BE DISCLOSED OR TRANSMITTED TO ANY OTHER


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    300-j2507/WH 10Base-T 100VG-Any mini jack PDF

    B82723

    Abstract: No abstract text available
    Text: EPCOS Sample Kit 2014 Ring Core Chokes for Power Lines Series B82723 www.epcos.com Ring Core Chokes for Power Lines Series B82723 LR IR L stray, typ Rtyp TR UL1 /VDE Ordering code mH A µH mV °C 56 0.5 800 2100 60 Yes A/J2501N001 B82723 27 1 440 750 60 Yes


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    B82723 /J2501N001 /J2102N001 /J2202N001 /J2402N001 /J2802N001 B82724 B82726 B82723 PDF

    BC647

    Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


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    MMBD4148 200MA OT-23 MBR0540 OD-123 1000MA DO-214AC B340A 5245B 225MW BC647 bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645 PDF

    77C7

    Abstract: 887c 1r12r
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


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    kf 203 transistor

    Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


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    NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: FMM5017VF GaAs MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications


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    FMM5017VF 29dBm FMM5017VF FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)


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    2SC5277A ENA1075A A1075-8/8 PDF

    mc3371

    Abstract: 58112,5 MHZ motorola application notes mc3361 MC3372 Colpitts mc3361 MC3371DTB MC3371P audio limiter analog 948F
    Text: Order this document by MC3371/D MC3371 MC3372 Low Power Narrowband FM IF LOW POWER FM IF The MC3371 and MC3372 perform single conversion FM reception and consist of an oscillator, mixer, limiting IF amplifier, quadrature discriminator, active filter, squelch switch, and meter drive circuitry. These devices are


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    MC3371/D MC3371 MC3372 MC3371 MC3372 MC3371/MC3372 MC3361/MC3357 MC3361/MC3357. 58112,5 MHZ motorola application notes mc3361 Colpitts mc3361 MC3371DTB MC3371P audio limiter analog 948F PDF

    J943-4554

    Abstract: e78996 india E78996 rectifier module IR E78996 IRFK6H250 u114 IRFK6J250 J9-43
    Text: Bulletin E 2 7111 International Ii ÔrIRectifier IRFK6H250,1RFK6 J250 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • H igh C urrent C apability. UL recognise d E 78996. E lectrically Isola ted B ase Plate. E asy A ssem b ly into E quipm ent.


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    E27111 IRFK6H250 IRFK6J250 E78996. T0-240 S-162 CH-6032 IL60067. NJ07650. J943-4554. J943-4554 e78996 india E78996 rectifier module IR E78996 u114 IRFK6J250 J9-43 PDF

    J2955

    Abstract: j3001 MJ2501 mj3001 J2501 transistor 2N 3055 2N3055M motorola MJ3000 3055a 2n 3055 transistor
    Text: MOTOROLA Order this document by J2500/D SEMICONDUCTOR TECHNICAL DATA M J2955 See 2N 3055 M J2955A (See 2N 3055A ) M edium -Pow er Com plem entary Silicon Transistors M J2500 . . . for use as output devices in complementary general purpose amplifier applica­


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    MJ2500/D J2955 J2955A J2500 J2501* J3000 J3001* O-204AA J2955 j3001 MJ2501 mj3001 J2501 transistor 2N 3055 2N3055M motorola MJ3000 3055a 2n 3055 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2497 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2497 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 1.2dB f=12GHz • High Gain Unit in mm 2.16 ± 0.2 1.1 1.1 : Ga = 10dB (f=12GHz)


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    2SK2497 12GHz) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3607 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 3.6 MAX . • Low Noise Figure, High Gain N F = l.ld B , |S2leP = 9-5dB f= 1.7 MAX. jg L MAXIMUM RATINGS (Ta = 25°C CHARACTERISTIC Collector-Base Voltage


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    2SC3607 -j250 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5086 SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r V H F -U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • U n it in mm Low N oise F ig u re , H igh G ain . 1.« ±0.2 N F = l . l d B , |S 2 le P = l l d B f = l G H z 0 8 ±0.1


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    2SC5086 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3099 Unit in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. N F= 1.7dB, |S 2 ie l2 = 15dB f= 500MHz NF = 2.5dB, |S2 ie l2 = 9.5dB(f=lGHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SC3099 500MHz) SC-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm V H F— UHF B A N D LO W NOISE AM PLIFIER APPLICATIONS. + 0.5 2.5 - 0 . 3 + 0 .2 5 1 .5 - 0 .1 5 • Low Noise Figure. dd . NF = 2.5dB, |S2iel2= 14.5dB f= 500MHz +I Et . NF = 3.0dB, |S2 ie l2 = 9.0dB(f=lGHz)


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    2SC3098 500MHz) SC-59 S21el2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3606 U nit in mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB , |S2lel2= lld B f=lGHz M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage


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    2SC3606 SC-59 PDF

    AN3592K

    Abstract: AN3592S phase shift detector V01D
    Text: AN3592K, AN3592S AN 3592K, AN3592S P A L V T R Ï E Î I I Ï S / P A L V T R J u m p i n g C o r r e c t i o n C ir c u its • let AN3592K w A N 3592K , A N 3 5 9 2 S !i, PA LA 'iSV TR tfO L Pi - m & Unit : mm K t t W S W U ft m • A N 3592K , A N 3 5 9 2 S i; ; ^ } * iig £■ff L T i ‘ 5 ,


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    AN3592K, AN3592S AN3592S AN3592K 22-Lead AN3592K phase shift detector V01D PDF

    LA3101

    Abstract: PC19060 Igus LD-310 LDL8 pci9080 80960Cx 93C06 I960CX NM93CS06
    Text: PCI 9060 T E C December, 1995 VERSION 1.2 PCI Bus Master Interface Chip for Adapters and Embedded Systems Features General D escrip tio n _ • PCI Bus Master Interface supporting adapters and embedded systems • Two independent DMA channels for local


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    PCI9060 Q0007bl xi6-31 Page-100- 0Q007b2 PCI90S0 LA3101 PC19060 Igus LD-310 LDL8 pci9080 80960Cx 93C06 I960CX NM93CS06 PDF

    S3111

    Abstract: 3111P
    Text: PT01 M S3111 cable connecting plug TERMINATION ASSEMBLIES " A ” General Duty •A" (SR), “ E " (SR), 'P '(SR), MS " F " Strain Relief Open Wire Seal *'P" P otting Bool W Cable Seal L L - D A P T 0 1A -X X -X X X (SR) PT01 E 'X X -X X X (SR )


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    S3111) 3111P 4375-28UNEF S3111 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 4 6 5 7 REVI5IONS ISS ZONE D E 5C R IP TIO N \P E R REQUEST\DATE F E D PLATING THICKNESS IN M IC R O -IN C H E S PER Q Q - B - 6 2 6 PL, 1 2 0 MIN, THICK OVER COPPER STRIKE PL. 2 0 0 MIN. THICK OVER COPPER STRIKE M lL - P - 19468 GASKET SILICONE BLACK


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    /65XD18 46XD1 66541A1---- 142A1 J2-50 PDF

    ET 2314

    Abstract: No abstract text available
    Text: 2SC5065 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR Unit in mm V H F - U H F B A N D L O W NO ISE A M P L IF IE R A PPLIC A TIO N S. • • Low Noise Figure, High Gain. NF = l.ld B , | S 2 l e l 2 = 12dB f=lG H z ÖO + COI Ö M A X IM U M R A T IN G S (Ta = 25°C)


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    2SC5065 SC-70 13ASU IC314 ET 2314 PDF

    LTA 703 S

    Abstract: amplifier shf
    Text: GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE FIELD EFFECT TRANSISTOR 2SK2331 U nit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain : Ga = lld B (f= 12GHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SK2331 12GHz) LTA 703 S amplifier shf PDF