Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    J20A10M TRANSISTOR Search Results

    J20A10M TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LP395Z/LFT1
    Texas Instruments Ultra Reliable Power Transistor 3-TO-92 Visit Texas Instruments Buy
    LM395T/NOPB
    Texas Instruments Ultra Reliable Power Transistor 3-TO-220 0 to 125 Visit Texas Instruments Buy
    ULN2003ANS
    Texas Instruments High-Voltage, High-Current Darlington Transistor Arrays 16-SO Visit Texas Instruments Buy
    ULQ2003ADRG4
    Texas Instruments Darlington Transistor Arrays 16-SOIC Visit Texas Instruments
    LP395Z/NOPB
    Texas Instruments Ultra Reliable Power Transistor 3-TO-92 -40 to 125 Visit Texas Instruments Buy

    J20A10M TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    J20A10M transistor

    Abstract: J20A10M J20A10
    Contextual Info: TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI TJ20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)


    Original
    TJ20A10M3 J20A10M transistor J20A10M J20A10 PDF

    J20A10M

    Abstract: J20A10M transistor TJ20A10M3 J20A10 tj20a10m J20A10M3
    Contextual Info: TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI TJ20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)


    Original
    TJ20A10M3 J20A10M J20A10M transistor TJ20A10M3 J20A10 tj20a10m J20A10M3 PDF

    J20A10

    Abstract: J20A10M J20A10M transistor TJ20A10M3
    Contextual Info: TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI TJ20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)


    Original
    TJ20A10M3 J20A10 J20A10M J20A10M transistor TJ20A10M3 PDF