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    GaAs FETs

    Abstract: FLM1414-8C
    Text: FLM1414-8C Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P-idg = 38.5dBm Typ. High Gain: G-j^B = 5.0dB (Typ.) High PAE: riadd = 19% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed


    OCR Scan     		PDF FLM1414-8C FLM1414-8C 2200mA J11jU GaAs FETs

    FLM1213-4C

    Abstract: GaAs FETs fujitsu gaas fet N32C microwave databook
    Text: p. FLM1213-4C . J Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 35.5dBm Typ. • • • • • High Gain: G-j^B = 5.0dB (Typ.) High PAE: riadd = 22% (Typ.) Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed


    OCR Scan     		PDF FLM1213-4C FLM1213-4C 1100mA 1213-4C J11jU GaAs FETs fujitsu gaas fet N32C microwave databook

    1213-6F

    Abstract: No abstract text available
    Text: F| .ft . FLM1213-6F i Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 37.5dBm Typ. • High Gain: G-j^B = 7.0dB (Typ.) • High PAE: r iadd = 27% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 12.7 ~ 13.2GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM1213-6F -45dBc 25dBm FLM1213-6F VD600 1213-6F J11jU 1213-6F