J11 TRANSISTOR Search Results

2SC4723

Abstract: 2SC4642K
Contextual Info: 2SC4642K/2SC4723 h "7 > v Z. £ / T ransistors 2S C 4642K Epitaxial 1e* * iyPlanar 7^ uNPN ~ Silicon NPN% > ,J11>h^> * * Transistor Z5C 47Z3 —Ax/ivÎ t ^ - i i l1if f l / / General Small Signal Amp. * ^Hfé^ìÉISI/Dimensions Unit : mm 2SC4723 2 .9 ± 0 .2

transistor eb 102

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LWE2015R FEATURES PINNING - SOT446A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

LWE2015R

Contextual Info: Az_ N AMER P H I L I P S / D I S C R E T E OLE D • bbSBTBl □QlSQl'i 6 ■ LWÊ2015R ^ r - ^ - o s r MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to 2,3 GHz in c.w.

VO6C

Abstract: NEL2004 NEL2035 NEL2001 NEL2004F02-24 NEL2012 VO-6C
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and 2 2 ±0.2 3 ±0.2 2 ±0.2

J148

Abstract: SD1127
Contextual Info: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127 • Gp 12 dB @ 12.5V 175 MHz • Pout 4.0 V Min. MAXIMUM RATINGS

SD1127

Contextual Info: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127  Gp 12 dB @ 12.5V 175 MHz  Pout 4.0 W Min. MAXIMUM RATINGS

J148

Contextual Info: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127 • Gp 12 dB @ 12.5V 175 MHz • Pout 4.0 V Min. MAXIMUM RATINGS

J148

Abstract: SD1127
Contextual Info: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed

SD1127

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Emitter

transistor J9

Abstract: 12w transistor MS2218 transistor 60 12w 12w 66 transistor transistor 12W 14
Contextual Info: MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS POUT = 55 WATTS GP = 6.6 dB MINIMUM INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION:

transistor J9

Abstract: 12w 66 transistor transistor 60 12w 12w 99
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS

NTE341

Contextual Info: NTE341 Silicon NPN Transistor RF Power Output Description: The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead

74LS132N

Abstract: diode c05*10 Robinson Nugent ICA-243-S-TG TDC3310 1n4148 D035 HPS-03-G C052C104K5X5CA Robinson Nugent ICA-243 NSH-12DB-S2-TR
Contextual Info: Electronics Semiconductor Division TMC1175AE1C The Evaluation Board for the TMC1175AE1C Description The TMC1175AE1C Evaluation Board brings all of the circuitry together for evaluating Raytheon Electronics’ TMC1175A CMOS A/D converter and the TDC3310 10-bit

74ls132n

Abstract: diode c05*10 1N4148 sma RPE122Z5U104M50V HPS-03-G ICA-286-S-TG NSH-02SB-S2-TR sealectro coax connector ICA286-STG marking U7 SMA
Contextual Info: www.fairchildsemi.com TMC1175AE1C The Evaluation Board for the TMC1175AE1C Description The TMC1175AE1C Evaluation Board brings all of the circuitry together for evaluating Fairchild Semiconductors’ TMC1175A CMOS A/D converter and the TDC3310 10-bit D/A converter. The A/D and D/A signal paths are independent but easily configurable at the edge connector for

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS

Contextual Info: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed

relay TB1 160

Contextual Info: User's Guide SLRU005 – February 2013 TPL7407L7-Channel Relay and Inductive Load Sink Driver EVM 1 Overview The TPL7407LEVM is a 7-Channel Relay and Inductive Load Sink Driver evaluation module that demonstrates the TPL7407LDR integrated circuit from Texas Instruments TI .

SD1127

Abstract: J11 transistor
Contextual Info: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Collector 2. Base 3. Emitter TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed

smd ss 7 transistor

Abstract: SMD TRANSISTOR j11
Contextual Info: Application Note 1946 ISL78268EVAL1Z Evaluation Board User Guide Introduction Key Features ISL78268 is an automotive grade synchronous buck controller with the 2-A sourcing/3-A sinking Integrated MOSFET Drivers. The device supports the wide input supply voltage range of 5V

SOT446A

Abstract: LWE2015R
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LWE2015R PINNING - SOT446A FEATURES • In te rd ig ita te d s tru c tu re p ro v id e s high e m itte r e ffic ie n c y PIN • D iffu se d e m itte r b a lla s tin g re s is to r p ro v id e s e x c e lle n t

Contextual Info: N AMER PHILIPS/DISCRETE OLE D • bbS3T31 OD14T4el 4 MAINTENANCE TYPE LKE27025R • T -S 3 -6 7 MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-emitter class-A amplifiers up to 2,7 GHz.

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS

sd1127

Contextual Info: <3\ U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1127 RF & MICROWAVE TRANSISTORS VHP FM MOBILE APPLICATIONS Features • • • • • I 175MHz 12.5 VOLTS POUT = 4.0 W MINIMUM G P =12.0dB

um10155

Abstract: philips class d audio amp UM10155 PHILIPS SEMICONDUCTOR audio sonic amplifier circuit diagram 1PS76SB10 UCD CLASS D PWM AUDIO AMPLIFIER class D mosfet amplifier diagram manual service amplifier UM1015
Contextual Info: UM10155 Discrete Class D High Power Audio Amplifier Rev. 02 — 5 September 2006 User manual Document information Info Content Keywords Class D Audio Amplifier, Universal Class D, UcD, PWM Audio Amplifier, High Power Audio. Abstract This user manual describes the operating instructions and the most