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    J10 DIODE Search Results

    J10 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    J10 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EM- 546 motor

    Abstract: BTa 140 equivalent transistor crossover MJ10009
    Text: MOTOROLA Order this document by MJ10009/D SEMICONDUCTOR TECHNICAL DATA M J10 009* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode ‘ Motorola Preferred Device 20 AMPERE NPN SILICON


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    MJ10009/D MJ10009 O-204AA EM- 546 motor BTa 140 equivalent transistor crossover PDF

    Untitled

    Abstract: No abstract text available
    Text: 03/11/99 13:56:45 Diodes 885-M6-485B~>68388Bl932 C8H0193Z2 RightFAI Page 082 J05-J10 1.5A SILICON RECURER Features_ • • • • Piasfcc Material - UL Fiammabiiity Classification 94V-0 Surge Overload Rating of 60A Peak Capable of Meeting the Environmental Tests in


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    885-M6-485B~ 68388Bl932 C8H0193Z2 J05-J10 MJL-STD-202, 6038BB193Z DS28004 PDF

    J406

    Abstract: SP40T j18 diode
    Text: FEATURES • 350-450 MHz ■ 1.7 dB Insertion Loss ■ 55 dB Isolation ■ 6 Line Encoded TTL Control ■ Constant Phase ■ Bite Circuitry ■ SMA Connectors MODEL NO. DSWM9040 è PIN Diode Switch SP40T CONNECTOR 11 PIN M24308/3-2F JL 1^ J10 J9 ® J8


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    M24308/3-2F DSWM9040 SP40T J406 SP40T j18 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: _ J05 - J10 1.5 AMPERE SILICON RECTIFIER INCORPORATED Features • • • • Plastic package has U nderwriters Lab flam m ability Classification 94V-0 Surge overload rating o f 60 A m peres peak Capable of m eeting the environm ental tests in M IL-STD-750C


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    MIL-STD-750C DO-15 MIL-STD-202, PDF

    Untitled

    Abstract: No abstract text available
    Text: Application Note 1348 Author: Bob Pospisil 1µF D2 S1AB S1AB J10 J11 VREF 0.1µF 1µF D1 C5 C4 0.01µF C8 C2 J9 J13 V+ DNP DNP C7 0.1µF R4 C1 The ISL28190 and ISL28191 amplifiers feature ultra-low noise, ultra-low distortion, and rail-to-rail output drive


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    ISL28190 ISL28191 75VDC) ISL2819xEVAL1Z ISL28191 ISL2815 ENABLEJ14 AN1348 PDF

    ISL70218

    Abstract: Isl70218sr ISL70218SRHMEVAL1Z
    Text: Application Note 1653 ISL70218SRH Evaluation Board User’s Guide J7 J5 C2 C4 1µF 1µF 0.1µF 0.01µF • ISL70218 Data Sheet, FN7871 • Single Supply Operation: +3V to +40V J10 C6 0.1µF C7 0.01µF Amplifier Configuration A simplified schematic of the evaluation board is shown in


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    ISL70218SRH 1/10W, AN1653 ISL70218SRHMEVAL1Z ISL70218 Isl70218sr PDF

    Untitled

    Abstract: No abstract text available
    Text: Application Note 1888 ISL70244SEH Evaluation Board User’s Guide J7 J5 Reference Documents V+ J8 J6 C2 C4 1µF 1µF J9 VREF J10 100 100 V- R11 The ISL70244SEHEV1Z evaluation platform is designed to evaluate the ISL70244SEH. The ISL70244SEH contains two high speed and low power op amps designed to take advantage


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    ISL70244SEH ISL70244SEHEV1Z ISL70244SEH. 1/10W, AN1888 PDF

    Untitled

    Abstract: No abstract text available
    Text: Application Note 1669 ISL70227SRH Evaluation Board User’s Guide C4 1µF J9 VREF J10 100 100 R11 C2 1µF D1 C5 Evaluation Board Key Features V+ J8 J6 0.1µF • ISL70227SRH Data Sheet, FN7925 0.01µF C6 0.1µF C7 0.01µF FIGURE 1. POWER SUPPLY CIRCUIT • Wide Supply Operation: 4.5V to 36V


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    ISL70227SRH FN7925 1/10W, AN1669 ISL70227MHEVAL1Z PDF

    diode KL-03

    Abstract: SMD DIODE CCD MARKING SMD MARKING CODE jt D1FJ10 marking code ccd diode smd diode schottky code marking 63 SMD MARKING CODE 501 KL-03 MARKING 1F smd marking code je
    Text: Schottky Barrier Diode Single Diode m tm m o u t lin e Package : 1F D 1 F J10 Unit I mm Weight 0.058# Typ i>y - K - 7 - » ' Cathode* mark 100V 1A >r Feature I • /J v S S M D • Sm all S M D • I r = 0.2mA • Low lR=0.2mA -3 CM CM I M 2' J@ . u-/i-K n(W )


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    D1FJ10 tVU-71-Â J532-1) diode KL-03 SMD DIODE CCD MARKING SMD MARKING CODE jt D1FJ10 marking code ccd diode smd diode schottky code marking 63 SMD MARKING CODE 501 KL-03 MARKING 1F smd marking code je PDF

    diode A123

    Abstract: No abstract text available
    Text: 2 G-1 J10 1 2 3 1 2 3 4 C4 1 2 GND 100n 3 GND MFNS1902 T11 25 R15 GND J42 J22 R16 CR C1 V5 GND 100n C11 DIODE D11 T21 MFNS1902 LED2 25 R25 GND J43 J23 R26 CG TXD RXD RTS# CTS# DTR# DSR# DCD# RI# 2 23 22 13 14 12 1 5 3 11 2 9 10 6 GND MFNS1902 T31 25 R35 J44


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    MFNS1902 CAT4238 DOGL128 W128-6X8/6X9 TMGG13264 diode A123 PDF

    j73 diode

    Abstract: wp-35 J57 diode MSA0651 J63-J65 p87 diode J69 DIODE PORT80 p82 diode A11P
    Text: C1 VCC 0.1uF C2 0.1uF IC1 J1 14 64 VCC CON2 J3 1 2 3 4 96 Vcc AVss AVcc AVref 16 J2 62 99 J4 98 J6 J7 J8 J10 38 37 36 RxD Port_80 Port_81 GND RESET CNVss TxD Vcc Vss J5 4pin CON3 Vss VCC 1 2 3 4 5 6 7 8 9 10 J13 35 J15 34 J17 33 J19 32 J21 31 P60/CTS0/RTS0


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    P60/CTS0/RTS0 P61/CLK0 P20/A0 P21/A1 P62/RxD0 P22/A2 P63/TxD0 P23/A3 P64/CTS1/RTS1/CTS0/CLKS1 P24/A4 j73 diode wp-35 J57 diode MSA0651 J63-J65 p87 diode J69 DIODE PORT80 p82 diode A11P PDF

    resistor 2k2

    Abstract: resistor 10k CAP 100nF 50V 0603 J3 DIODE ST CAP 10nF 50V 0603 SANYO 220uF 16V wurth inductor Resistor 6TPE220M wurth
    Text: Board code: DATA: QTY 3 1 2 1 1 2 1 1 1 2 2 2 1 1 1 1 1 1 1 1 1 1 1 2 1 7 5 1 1 4 4 1 1 1 REFERENCE C1:C3 C4 C5, C6 C19 C7 C9, C10 C11 C8 C12 C13, C14 C15, C16 C17, C18 C20 C21 C22 C23 CIN CREF C26 C24, C25 C27 C28 D1 D2, D3 IC1 J1, J2, J4, J5, J8, J9 J10


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    PM6680A STEVAL-ISA053V2 QFN-32 UMK325BJ106KM resistor 2k2 resistor 10k CAP 100nF 50V 0603 J3 DIODE ST CAP 10nF 50V 0603 SANYO 220uF 16V wurth inductor Resistor 6TPE220M wurth PDF

    DOGM162

    Abstract: DOGL128-6 MFNS1902 DOGS102-6 DOGL128 DOGS102 DOGM128 EA DOGS102-6 DOGM132 DOGM128-6
    Text: 2 G-1 J10 1 2 D5 3 MFNS1902 T11 25 R15 BAV99 1 V5E 1 2 3 4 100n C4 2 D4 3 R16 MCR 1 2 3 CS SCK SI 26 17 27 28 19 16 15 D11 T21 25 MFNS1902 LED2 R14 6 R25 W 7 L H 5 100n 1 S11 GND 1k MCG R26 R14 30 FB SW GND 2 4 GND 23 22 13 14 12 T31 25 R35 MFNS1902 LED3 100k


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    MFNS1902 BAV99 DOGM132-5 DOGM162 DOGL128-6 MFNS1902 DOGS102-6 DOGL128 DOGS102 DOGM128 EA DOGS102-6 DOGM132 DOGM128-6 PDF

    7343 electrolytic cap

    Abstract: resistor resistor 5K6 diode c18 st UMK325BJ106KM 5uH inductor sanyo 330uF tantalum 4TPD330M cap 100nf CAP 4.7uF
    Text: Board Code: Date: QTY 3 1 2 1 1 2 1 1 1 2 2 2 1 1 1 1 1 1 1 1 1 1 1 2 1 7 5 1 1 4 1 1 1 REFERENCE C1:C3 C4 C5, C6 C19 C7 C9, C10 C11 C8 C12 C13, C14 C15, C16 C17, C18 C20 C21 C22 C23 CIN CREF C26 C24, C25 C27 C28 D1 D2, D3 IC1 J1, J2, J4, J5, J8, J9, J10 J3, J6, J7, J11,


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    PM6680 STEVAL-ISA053V1 DO216AA QFN-32 UMK325BJ106KM 7343 electrolytic cap resistor resistor 5K6 diode c18 st 5uH inductor sanyo 330uF tantalum 4TPD330M cap 100nf CAP 4.7uF PDF

    MJ10006

    Abstract: No abstract text available
    Text: I tBbTESM MOTOROLA TECHNICAL DATA D e s ifjn o r s D a ta S h e e t 10 A M P E R E NPN SILICON SWITCHMODE SER IES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE POWER DARLINGTON TRANSISTORS T he M J1 0 0 0 6 an d M J1 0 0 0 7 Darlington transistors are design ed


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    MJ10006 MJ10007 PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU368 – March 2010 TPS2456EVM The TPS2456EVM is an evaluation module used to evaluate the TPS2456 Dual 12V Protection/Blocking Controller. The TPS2456 provides hot swap capability and diode Or functions via external Mosfets. The board is configured with the following nominal specifications.


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    SLVU368 TPS2456EVM TPS2456EVM TPS2456 800ms PDF

    6A4 DIODE

    Abstract: AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2 1N4002
    Text: DIODE RECTIFIERS • 1.0A THRU 6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3.0 3.0 6.0 @ TEMP "C 25 25 25 25 25 SURGE (A) 50 50 200 150 400 50V 1N4001 J-05 RL251 1N5400 6A-05 100 V 1N4002 0-1 RL252 1N5401 6A-1 200V 1N4003 J-2 RL253 1N5402 6A-2 400V 1N4004


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    1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 DO-41 DO-15 RL251 6A4 DIODE AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3Z4M 3Z4M Laser Displacement Sensor 3Z4M High Resolution to 10 µ or 50 µ, Gives Precise Linear Output and Displays Distance • Distance is displayed in millimeters on controller ■ Ready-to-use linearized output is both -10 to +10 VDC and 4 to 20 mA ■ Sensing distances of 40 mm and 100 mm


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    1-800-55-OMRON PDF

    1N540I

    Abstract: No abstract text available
    Text: CRI MSON SEMI CONDUCTOR INC ^ D Ejssm O Tb 000D343 2514096 C R Ï M S O N SEMI C O N D U C T O R INC • 99D 00343 ~— D T - à f ~ f r r ! ' . i DIODE RECTIFIERS • 1.0A THRU6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3.0 3.0 6,0 @ TEMP *C 25 25 25 25 25


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    000D343 1N40O1 RL251 1N5400 1N4002 RL252 1N540I 1N4003 RL253 1N5402 1N540I PDF

    3Z4M-S01

    Abstract: 3Z4M-S22 LASER DISTANCE METER J10 DIODE analog displacement sensor for 0 to 50 mm 3z4m OMRON variable resistor distance sensor with measuring range 30 m 3Z4M-S01-7 linear displacement sensor
    Text: 3Z4M 3Z4M Laser Displacement Sensor 3Z4M High Resolution to 10 µ or 50 µ, Gives Precise Linear Output and Displays Distance • Distance is displayed in millimeters on controller ■ Ready-to-use linearized output is both -10 to +10 VDC and 4 to 20 mA ■ Sensing distances of 40 mm and 100 mm


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    2132-JD 1-800-55-OMRON 3Z4M-S01 3Z4M-S22 LASER DISTANCE METER J10 DIODE analog displacement sensor for 0 to 50 mm 3z4m OMRON variable resistor distance sensor with measuring range 30 m 3Z4M-S01-7 linear displacement sensor PDF

    DIODE IN4007

    Abstract: IN4005 IN5406 diode IN4007 Diode IN4006 DIODE in4005 IN4006 IN5406 IN4007 DIODE diode in5406
    Text: CRIMSON SEMI CON DUCTOR INC ' ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC _ 99D 00343 — d DE | SSlMGTb □□0D343 0 "J- - r - à f r i . ' i ' • DIODE R E C T IF IE R S • 1.0ATHRU 6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3 .0 3 .0


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    55mmb 000D3M3 1N4Q01 RL251 1N5400 1N4002 RL252 1N540I 1N4003 RL253 DIODE IN4007 IN4005 IN5406 diode IN4007 Diode IN4006 DIODE in4005 IN4006 IN5406 IN4007 DIODE diode in5406 PDF

    CHD09122

    Abstract: Calmark calmark retainer 617 610 connector 617 connector ss 211
    Text: A d v a n c e d R e l e a s e FEATURES MFD MODEL NO. CHD09122 20 - 4000 MHz Space Application Hermetic Package Radiation Tolerant, 100 K Rad Diode Switch FET Amplifier Output Signal Distribution Unit PIN 1 .158 .115 PIN 1 (6.617) SEE DETAIL A (PIN 1) 4.250


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    CHD09122 000-SS-11 CHD09122 Calmark calmark retainer 617 610 connector 617 connector ss 211 PDF

    5B01

    Abstract: 5B37 5B47 AC1361 CH10 CH11 U3422 Littelfuse 324 AC1362
    Text: a 5B Series 8-Channel Backplanes 5B08/5B08-MUX FEATURES 8-Channel, Industry Standard 5B Series Compatibility Two Backplane Selections 5B08: Eight Independent I/O Channels 5B08-MUX: Eight I/O Channels Multiplexed onto One Bus Mix and Match 5B Series I/O Module Capability


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    5B08/5B08-MUX 5B08-MUX: 5B08-MUX C2942 5B01 5B37 5B47 AC1361 CH10 CH11 U3422 Littelfuse 324 AC1362 PDF

    programming Stick pinouts

    Abstract: P8051 ATA010A0X3Z LM3100MH LP38693MP-ADJ SW11
    Text: Mixed-signal Power Manager User’s Guide Actel Corporation, Mountain View, CA 94043 2009 Actel Corporation. All rights reserved. Printed in the United States of America Part Number: 50200167-1 Release: August 2009 No part of this document may be copied or reproduced in any form or by any means without prior written


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