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    J SMD TRANSISTOR Search Results

    J SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    J SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd-transistor DATA BOOK

    Abstract: smd transistor book smd transistor fh SIPMOS application note smd transistors SMD BOOK BOOK SMD
    Text: APPLICATIONS POWER SEMICONDUCTORS Jürgen Gladigau ● Otto Voggenreiter Power transistors in SMD packages: Calculating power dissipation the right way More and more power transistors are being offered in surface mount variants of power packages. When calculating maximum permissible power dissipation,


    Original     		O-251 OT-223 smd-transistor DATA BOOK smd transistor book smd transistor fh SIPMOS application note smd transistors SMD BOOK BOOK SMD PDF

    transistor smd marking BJ

    Abstract: smd transistor bj transistor smd marking bh transistor smd marking BJ pnp transistor smd bh smd marking BJ transistor smd bj smd transistor marking BK BJ SMD IC BCX71J
    Text: Transistors IC SMD Type PNP General Purpose Transistors BCX71H/J/K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1


    Original     		BCX71H/J/K OT-23 BCX71H BCX71J BCX71K transistor smd marking BJ smd transistor bj transistor smd marking bh transistor smd marking BJ pnp transistor smd bh smd marking BJ transistor smd bj smd transistor marking BK BJ SMD IC BCX71J PDF

    transistor smd bj

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification BCX71H/J/K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1


    Original     		BCX71H/J/K OT-23 BCX71H BCX71J BCX71K transistor smd bj PDF

    SMD Transistor PNP 3pin

    Abstract: dual zener common anode DA121 bipolar zener diodes MA35132K smd diode bas16t tube 805 BAS116T BAS21T BAS40T
    Text: New Product Announcement October 2001 Introducing NEW Subminiature Schottky, Zener & Switching Diodes in SOT-523 3-pin SMD’s SOT-523 C TOP VIEW B B C E A G H K J Available Types M N D L Single switching diodes up to 250 Volts Single signal diodes up to 85 Volts


    Original     		OT-523 BAS16T BAS16TT1. MMBD4448HT DA121TT1, MA35132K, DA121. SMD Transistor PNP 3pin dual zener common anode DA121 bipolar zener diodes MA35132K smd diode bas16t tube 805 BAS116T BAS21T BAS40T PDF

    2SC5609

    Abstract: 2sc5609 transistor DA221 transistor 2sc5609 philips zener 2SA1774R 2SA1774S panasonic zener smd ZENER PANASONIC 2PC4617q
    Text: New Product Announcement February 2002 Introducing Second Generation Subminiature Schottky, Zener & Switching Diodes in SOT-523 3-pin SMD’s SOT-523 C TO P V IE W B B C E A G H K J Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D  


    Original     		OT-523 diD4448HTS 1SS362; DA221; MA3S133, MA3S137 MMBT2222AT MMBT3904T MMBT3906T 2SC5609 2sc5609 transistor DA221 transistor 2sc5609 philips zener 2SA1774R 2SA1774S panasonic zener smd ZENER PANASONIC 2PC4617q PDF

    smd transistor S5

    Abstract: smd transistor s3 smd 4A data smd TRANSISTOR 257 smd transistor 2a j TO-5 amps pnp transistor smd TRANSISTOR 3 f smd5 smd pk transistor S3 SMD
    Text: SFT6036 series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 4 AMP PNP Darlington Power Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information1/


    Original     		SFT6036 SFT6036 O-254 O-257 200oC SFT6039 O-254, O-257, smd transistor S5 smd transistor s3 smd 4A data smd TRANSISTOR 257 smd transistor 2a j TO-5 amps pnp transistor smd TRANSISTOR 3 f smd5 smd pk transistor S3 SMD PDF

    smd 4A data

    Abstract: No abstract text available
    Text: SFT6039 series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 4 AMP NPN Darlington Power Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/


    Original     		SFT6039 SFT6039 O-254 O-257 200oC SFT6036 O-254, O-257, smd 4A data PDF

    smd transistor S5

    Abstract: smd transistor s3 npn smd 2a NPN 200 VOLTS 1 amp smd TRANSISTOR smd TRANSISTOR 257 S3 SMD smd transistor 2a j smd npn darlington pk transistor npn smd transistor 257
    Text: SFT6039 series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 4 AMP NPN Darlington Power Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/


    Original     		SFT6039 SFT6039 O-254 O-257 200oC SFT6036 O-254, O-257, smd transistor S5 smd transistor s3 npn smd 2a NPN 200 VOLTS 1 amp smd TRANSISTOR smd TRANSISTOR 257 S3 SMD smd transistor 2a j smd npn darlington pk transistor npn smd transistor 257 PDF

    4N03L04

    Abstract: iPP80n03S4L-04 4N03L03 4n03
    Text: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N03S4L-04 PG-TO263-3-2 4N03L04 iPP80n03S4L-04 4N03L03 4n03 PDF

    4N03L15

    Abstract: DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2
    Text: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L15 IPI22N03S4L-15 4N03L15 DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 PDF

    3N10L16

    Abstract: DIODE smd marking v1 smd diode 949
    Text: IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 15.4 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 50 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI50N10S3L-16 PG-TO263-3-2 3N10L16 DIODE smd marking v1 smd diode 949 PDF

    Untitled

    Abstract: No abstract text available
    Text: mm/ Features 1. î M M t t Q M D i m m M & r J W X 37ï?o tä^cDämmm 2. ^ y y v o y ^ - i ^ ^ y i j y 3. J 7 D - [ i ^ m hs 1. Developed as a chip-type SMD Photo-transistor 2. Automatic mounting by chip mounter available 3. Reflow soldering available o


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: _ PZT2907 PZT2907A J SILICON PLANAR EPITAXIAL TRANSISTORS PNP medium power transistors in a m icrominiature SMD package SOT-223 . Designed prim arily fo r high-speed switching and driver applications. Q UICK REFERENCE D A T A _


    OCR Scan     		PZT2907 PZT2907A OT-223) PDF

    Untitled

    Abstract: No abstract text available
    Text: • bb53^31 00256=14 562 H A P X N AMER PHILIPS/DISCRETE b?E D _ PMBTA55 PMBTA56 J SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature SMD plastic envelope intended for surface mounted applications.


    OCR Scan     		PMBTA55 PMBTA56 PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbSBIBl 002b0D3 07M H A P X N AMER PHI LIPS/DISCRETE PZT3904 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed primarily for high-speed, saturated switching applications in industrial service.


    OCR Scan     		002b0D3 PZT3904 OT-223) PDF

    Untitled

    Abstract: No abstract text available
    Text: bbSB'IBl OOBbOlH ^ST * A P X N AUER PHILIPS/DISCRETE b?E J> yv PZTA42 PZTA43 SILICON EPITAXIAL TRAN SISTO RS NPN transistors in a microminiature SMD envelope SOT-223 . They are primarily intended for use in telephony and professional communication equipment.


    OCR Scan     		PZTA42 PZTA43 OT-223) PDF

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 DDEbOEB ‘IbE « A P X PZTA63 PZTA64 b7E D N AUER PHILIPS/DISCRETE J V SMALL-SIGNAL DARLINGTON TRANSISTORS PNP small-signal Darlington transistors in a microminiature SMD envelope SOT-223 . Designed primarily fo r preamplifier input applications requiring high input impedance.


    OCR Scan     		bb53T31 PZTA63 PZTA64 OT-223) PZTA13/14. PDF

    Untitled

    Abstract: No abstract text available
    Text: • bb53ci31 D025flfl7 342 HAPX N APIER PHILIPS/DISCRETE PMBTA05 PMBTA06 b?E I> J V SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD plastic envelope intended for surface mounted applications. They are primarily intended for use in telephony and professional communication equipment.


    OCR Scan     		bb53c D025flfl7 PMBTA05 PMBTA06 PDF

    Untitled

    Abstract: No abstract text available
    Text: • Features CHIP PHOTO-TRANSISTOR 1. Developed as a chip type SMD photo-tran­ CmSENSOR sistor for both reverse and top surface m ounting 2 . 5 ^ J îi^ æ iS e .2 L x l,4 5 ( W ) x 1 .1 2. Small and square size, dim ensions : 2 .2 (L)x 1 . 4 5 ( W ) X 1 . 1 (H)mm


    OCR Scan     		-2001R CL-200IR PDF

    PMBFJ174

    Abstract: No abstract text available
    Text: bb Sim i 002405b 524 H A P X N APIER P H IL IP S/ D IS CR ET E b?E I> PMBFJ174 to 177 _ J V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in plastic microminiature SOT-23 envelopes. They are intended for application with analogue switches, choppers, commutators etc. using SMD


    OCR Scan     		002405b PMBFJ174 OT-23 PMBFJ174 RMBFJ174 PDF

    Untitled

    Abstract: No abstract text available
    Text: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed


    OCR Scan     		bL53T31 0025b57 BST86 0D35bbD BST86 PDF

    transistor SMD FLO 14

    Abstract: PR11
    Text: PHOTO-REFLECTOR OR Ü S J Ü IS ! n w n b w P R -n SMD type Photo-reflector PR-11 •&a ■Features 1. Dimensions:3.7 L x3.4(W)xi.3<H)mm, being extra thin and compact in size 2. The focal distance of 1mm enables the position sensing to be of high accuracy.


    OCR Scan     		PR-11, PR-11 transistor SMD FLO 14 PR11 PDF

    pmbfj174

    Abstract: PMBFJ174 to 177 SMD 4B0
    Text: • ^3 3* 1 3 1 D O S H O S b 524 N A PIER P H I L I P S / D I S C R E T E IAPX b?E PMBFJ174 to 177 D J P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in plastic m icrom iniature SOT-23 envelopes. They are intended fo r application w ith analogue switches, choppers, commutators etc. using SMD


    OCR Scan     		PMBFJ174 OT-23 PMBFJ174 7Z94962 PMBFJ174 to 177 SMD 4B0 PDF

    Power Convertibles pr 205

    Abstract: TR-NWT-000322 Self Oscillating Flyback Converters smd transistor H-R Diode SM 48 smd code
    Text: J= POWER IE CONVERTIBLES WP05R SERIES 5 WATTS REGULATED CONVERTER SMALL PACKAGE, WIDE INPUT RANGE FEATURES APPLICATIONS • • • • • • • • • • • • SM A LL P A C K A G E SIZE: 1" x 2 " INDUSTRY STA N DARD PINOUT SU R F A C E MOUNT D E V IC E S SMD


    OCR Scan     		WP05R UL1950 Power Convertibles pr 205 TR-NWT-000322 Self Oscillating Flyback Converters smd transistor H-R Diode SM 48 smd code PDF