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    J FET RF CASCODE INPUT Search Results

    J FET RF CASCODE INPUT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    J FET RF CASCODE INPUT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology

    Abstract: No abstract text available
    Text: 200 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 22, NO. 4, APRIL 2012 A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Christophe Masse, William Vaillancourt, and


    Original     		90-nm A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology PDF

    list of transistor

    Abstract: dual-gate sr 160 DIODE Equivalent list
    Text: [II] EXPLANATION OF HIGH-FREQUENCY CHARACTERISTICS 1. H IG H -FR E Q U E N C Y T R A N SIST O R PA R A M E T E R ex ten t of signals am plitude to be handled. E quivalent p a ra m eters o f a tra n sisto r in ­ E quivalent circu its have been developed


    OCR Scan     		PDF

    Large-Signal Characterization and Modeling of MOSFET for PA Applications

    Abstract: NONLINEAR MODEL LDMOS
    Text: RTUIF-28 Large-Signal Characterization and Modeling of MOSFET for PA Applications Sunyoung Lee and Tzung-Yin Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the large-signal model requirements and generation as well as the 1- and 2-tone


    Original     		RTUIF-28 inter-m2004 Large-Signal Characterization and Modeling of MOSFET for PA Applications NONLINEAR MODEL LDMOS PDF

    LM103 zener

    Abstract: jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
    Text: FET Circuit Applications FET Circuit Applications National Semiconductor Application Note 32 February 1970 Polycarbonate dielectric TL H 6791 – 1 Sample and Hold With Offset Adjustment The 2N4339 JFET was selected because of its low lGSS k100 pA very-low lD(OFF) (k50 pA) and low pinchoff volt-


    Original     		2N4339 2N4393 2N4393 LM103 zener jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208 PDF

    C1018

    Abstract: 1030mhz oscillator J FET RF Cascode Input 1030mhz TQ3131 TQ3132 TQ5132 42HG
    Text: WIRELESS COMMUNICATIONS DIVISION TQ5132 Control 2 RFA Gain RF IN Select DATA SHEET VDD LO IN GND Control 1 Mode Select/ LO Input 3V Cellular Band CDMA/AMPS RFA/Mixer IC Control 3 IFA Gain Select GIC CDMA IF IF Out Out IF Out AMPS IF Out Features Small size: SOT23-8


    Original     		TQ5132 OT23-8 TQ5132 IS-95 TQ3131 TQ3132 800MHz C1018 1030mhz oscillator J FET RF Cascode Input 1030mhz TQ3132 42HG PDF

    Untitled

    Abstract: No abstract text available
    Text: W h p % HEW LETT ft"EM P A C K A R D 0 .8 - 6 G H z 3 V D o w n c o n v e r te r Technical Data IAM-91563 Features • +0 dBm Input IP3 at 1.9 GHz Surface Mount Package SOT-363 SC -70 • Single +3V Supply • 8.5 dB SSB N oise Figure at 1.9 GHz • 9.0 dB Conversion Gain at


    OCR Scan     		IAM-91563 OT-363 IAM-91563 4447SÃ 5964-9489EUS 5965-1330E PDF

    UPG2117K

    Abstract: UPG2118K J FET RF Cascode Input upg2118
    Text: NEC's VERSATILE 3V GSM UPG2117K GaAs MMIC POWER AMPLIFIER FEATURES DESCRIPTION • E-MODE HJ-FET TECHNOLOGY/SINGLE POSITIVE SUPPLY VOLTAGE • LOW VOLTAGE OPERATION: VDD = +3.2 V • HIGH EFFICIENCY: PAE = 57% TYP • 20 PIN 4 X 4 MM SQUARE MICRO LEAD PACKAGE


    Original     		UPG2117K UPG2117K 10deg UPG2117K-E3 20-pin UPG2118K J FET RF Cascode Input upg2118 PDF

    Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

    Abstract: 180NM IBM
    Text: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE


    Original     		11b/g Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN 180NM IBM PDF

    75315-001

    Abstract: Isolated Feedback Generator an J FET RF Cascode Input differential pair cascode HQV110
    Text: COMPONENTS Section 2 Hybrid Preamplifier HQV110 LOW-NOISE PULSE PREAMPLIFIER 0.25 fC r.m.s. Noise in Charge Mode 3 pA/\Hz r.m.s. Noise in Current Mode 30 MHz Bandwidth at 1 mV/pC Gain Sensitivity to 500 mV/pC Very Wide Dynamic Range Inverting and Non-Inverting Outputs


    OCR Scan     		HQV110 HQV110 -V-1000 75315-001 Isolated Feedback Generator an J FET RF Cascode Input differential pair cascode PDF

    Untitled

    Abstract: No abstract text available
    Text: 0PA111 B U R R -B R O W N [ ] Low Noise Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 100% Tested, 8nvVfiz max 10kHz • LOW BIAS CURRENT: 1pA max • PRECISION INSTRUMENTATION • DATA ACQUISITION • LOW OFFSET: 250[iV max


    OCR Scan     		0PA111 10kHz) 120dB 100dB OPA111 ZZ001 17313bS D027370 PDF

    HP 5082-4204

    Abstract: UDT Pin-040A photodiode amplifier OPA128 SD-041-11-21-011 fast photodiode amplifier hp 5082-4204 pin photodiode 760nm photodiode 5082-4204 J FET RF Cascode Input
    Text: DESIGNING PHOTODIODE AMPLIFIER CIRCUITS WITH OPA128 The OPA128 ultra-low bias current operational amplifier achieves its 75fA maximum bias current without compromise. Using standard design techniques, serious performance trade-offs were required which sacrificed overall


    Original     		OPA128 OPA128 HP 5082-4204 UDT Pin-040A photodiode amplifier SD-041-11-21-011 fast photodiode amplifier hp 5082-4204 pin photodiode 760nm photodiode 5082-4204 J FET RF Cascode Input PDF

    transistor C2310

    Abstract: CFW455H
    Text: Order this document by MC13030/D MC13030 Advance Information Dual Conversion AM Receiver DUAL CONVERSION AM RECEIVER The MC13030 is a dual conversion AM receiver designed for car radio applications. It includes a high dynamic range first mixer, local oscillator,


    Original     		MC13030/D MC13030 MC13030 MC13030/D* transistor C2310 CFW455H PDF

    cfw455ht

    Abstract: CFW455H mps9426 transistor C2310 C2310 transistor BA243 equivalent CFW455 J FET RF Cascode Input CFU455H2 shortwave radio IC
    Text: Order this document by MC13030/D MC13030 Advance Information Dual Conversion AM Receiver DUAL CONVERSION AM RECEIVER The MC13030 is a dual conversion AM receiver designed for car radio applications. It includes a high dynamic range first mixer, local oscillator,


    Original     		MC13030/D MC13030 MC13030 MC13030/D* cfw455ht CFW455H mps9426 transistor C2310 C2310 transistor BA243 equivalent CFW455 J FET RF Cascode Input CFU455H2 shortwave radio IC PDF

    Untitled

    Abstract: No abstract text available
    Text: Or, Call Customer Service at 1-8B0-548-6132 USA Only A B U R R -B R O W N OPA121 •- -— CM s o FEATURES OPERATIONAL AMPLIFIERS Low Cost Precision Difet® OPERATIONAL AMPLIFIER APPLICATIONS • LOW NOISE: 6nW /Hz typ at 10kHz • OPTOELECTRONICS • LOW BIAS CURRENT: 5pA max


    OCR Scan     		1-8B0-548-6132 OPA121 10kHz 110dB OPA121 17313bS 00H7AEM PDF

    HP 5082-4204

    Abstract: hp 5082-4204 pin photodiode 5082-4204 photodiode amplifier UDT-PIN photodiode bias circuit SBOA061 fast photodiode amplifier hp 5082 4204 pin photodiode Pin-040A
    Text: DESIGNING PHOTODIODE AMPLIFIER CIRCUITS WITH OPA128 The OPA128 ultra-low bias current operational amplifier achieves its 75fA maximum bias current without compromise. Using standard design techniques, serious performance trade-offs were required which sacrificed overall


    Original     		OPA128 OPA128 HP 5082-4204 hp 5082-4204 pin photodiode 5082-4204 photodiode amplifier UDT-PIN photodiode bias circuit SBOA061 fast photodiode amplifier hp 5082 4204 pin photodiode Pin-040A PDF

    J FET RF Cascode Input

    Abstract: sd2200 SD2200 SEMICONDUCTOR SD2200DE topaz
    Text: TOPAZ SEMICONDUCTOR DSE D g ^0fl522b □ □□1,050 1 | ' T - yi-zf SD22ÛQ SEMICONDUCTOR_ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-206AF TO-72 Hermetic Package SD2200DE SD2200DE/R with Shorting Ring on leads 20Vt 750


    OCR Scan     		SD2200 D-EV30S O-206AF SD2200DE SD2200DE/R J FET RF Cascode Input sd2200 SD2200 SEMICONDUCTOR SD2200DE topaz PDF

    CFW455H

    Abstract: CFW 455 HT wi fi antenna schematic RF coil MRI circuit RADIO RECEIVER IC NEC car radio 4.5-Mhz shortwave receiver IS 1007 Dual Conversion AM Receiver shortwave radio IC
    Text: Order this document bv MC13030/D MOTOROLA I @ I MC13030 , I Advance Information ., ., . Dual Conversion AM Receiver DUA~’CONVERSION s$;$F, AM RECEIVER, ~j:’ . \ ,~ \,. ~ ,L,:,h~:. .), \,. .!‘.%+ !: .:, \“.i. {!, The MC1 3030 is a dual conversion AM receiver designed for car radio


    Original     		MC13030/D MC13030 1PHX33E6W CFW455H CFW 455 HT wi fi antenna schematic RF coil MRI circuit RADIO RECEIVER IC NEC car radio 4.5-Mhz shortwave receiver IS 1007 Dual Conversion AM Receiver shortwave radio IC PDF

    marking 683

    Abstract: No abstract text available
    Text: Wfiol HEWLETT mL/iM P A C K A R D 0 .8 -6 GHz 3 V Downconverter Technical Data IAM-91563 F ea tu res • +0 dBm Input IP3 at 1.9 GHz Surface M ount Package SOT-363 S C -70 • Single +3V Supply • 8.5 dB SSB N oise Figure at 1.9 GHz • 9.0 dB Conversion Gain at


    OCR Scan     		IAM-91563 OT-363 IAM-91563 OT-363 OT-143 5965-1330E 5965-9973E 4447S marking 683 PDF

    Untitled

    Abstract: No abstract text available
    Text: What H E W L E T T * m L liM P A C K A R D 0 .8 -6 GHz 3 V Downconverter Technical Data IAM-91563 Features • +0 dBm Input IP3 at 1.9 GHz • Single +3V Supply • 8.5 dB SSB Noise Figure at 1.9 GHz • 9.0 dB Conversion Gain at 1.9 GHz • Ultra-miniature Package


    OCR Scan     		IAM-91563 OT-363 SC-70) IAM-91563 OT-363 OT-143 PDF

    1030mhz oscillator

    Abstract: ic lg 631 967m TQ3131 TQ5131 LG 631 IC
    Text: WIRELESS COMMUNICATIONS DIVISION TQ5131 RF IN VDD GND LO IN DATA SHEET 3V Cellular Band CDMA/AMPS RFA/Mixer IC Mode Select/ LO Input IFA Gain Select GIC CDMA IF IF Out Out IF Out AMP's IF Out Features Small size: SOT23-8 Single 3V operation Product Description


    Original     		TQ5131 OT23-8 TQ5131 IS-95 TQ3131 800MHz 1030mhz oscillator ic lg 631 967m TQ3131 LG 631 IC PDF

    hp 5082-4204 pin photodiode

    Abstract: 1506H HP 5082-4204 5082-4204 AD547 "zero-bias schottky diode" sd-041
    Text: B U R R - BR OU N 3ME CORP D • 17313bS Q O lfilS M B U R R -B R O W N b ■BUB OPA111 MILITARY AND DIE VERSIONS AVAILABLE Low Noise Precision Difet® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 100% Tested, 8nWHz max 10kHz • LOW BIAS CURRENT: 1pA max


    OCR Scan     		17313bS OPA111 10kHz) 120dB 100dB OPA111 -80dB 17313b5 10kHz 30kHz hp 5082-4204 pin photodiode 1506H HP 5082-4204 5082-4204 AD547 "zero-bias schottky diode" sd-041 PDF

    HP 5082-4204

    Abstract: riaa equalized LN 741 "zero-bias schottky diode" riaa cascode preamplifier
    Text: Or, Call Customer Service at 1-800-548-6132 USA Only 2 FEATURES APPLICATIONS • LOW NOISE: 100% Tested, 8nWfiz max (10kHz) • LOW BIAS CURRENT: 1pA max • LOW OFFSET: 250(iV max • LOW DRIFT: 1|iV/°C max • • • • • • • HIGH OPEN-LOOP GAIN: 120dB min


    OCR Scan     		10kHz) 120dB 100dB OPA111BM 17313t OPA111 HP 5082-4204 riaa equalized LN 741 "zero-bias schottky diode" riaa cascode preamplifier PDF

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR PDF

    sot 363 marking J IX

    Abstract: RF1890 J Fet marking 2 AW LAM-91563 AM-91563 mmic marking 87
    Text: W O ñ HEW LETT W LCM P A C K A R D 0 .8-6 GHz 3VDownconverter TfechnicalData IAM-91563 Features • +0 dBm Input IP* at 1.9 6H z • Single +3V Supply • 8.5 dB SSB Noise Figure at 1.9 GHz • 9.0 dB Conversion Gain at 1.9 GHz • Ultra-miniature Package


    OCR Scan     		IAM-91563 OT-363 IAM-91563 OT-363 OT-143 5964-9489EUS 59654330E 10J013 0X101 sot 363 marking J IX RF1890 J Fet marking 2 AW LAM-91563 AM-91563 mmic marking 87 PDF