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    J 13008 Search Results

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    HD6413008VFI25 Renesas Electronics Corporation 16-bit Microcontrollers with Embedded 512KB Flash Microcomputer (Non Promotion) Visit Renesas Electronics Corporation
    HD6413008XI25 Renesas Electronics Corporation 16-bit Microcontrollers with Embedded 512KB Flash Microcomputer (Non Promotion) Visit Renesas Electronics Corporation
    HD6413008X25 Renesas Electronics Corporation 16-bit Microcontrollers with Embedded 512KB Flash Microcomputer (Non Promotion) Visit Renesas Electronics Corporation
    HD6413008VTE25 Renesas Electronics Corporation 16-bit Microcontrollers with Embedded 512KB Flash Microcomputer (Non Promotion), , / Visit Renesas Electronics Corporation
    HD6413008F25V Renesas Electronics Corporation 16-bit Microcontrollers with Embedded 512KB Flash Microcomputer (Non Promotion), , / Visit Renesas Electronics Corporation
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    J 13008 Price and Stock

    Amphenol Corporation HC1300800000G

    Fixed Terminal Blocks 350 TB SPRING CLAMP
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    Mouser Electronics HC1300800000G
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    Amphenol Corporation KG1300800000G

    Pluggable Terminal Blocks TB SKT MATCH/TH/TT
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    Mouser Electronics KG1300800000G
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    Amphenol Corporation OQ1300800000G

    Pluggable Terminal Blocks 762 TB SOCKET OPEN VER
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    Amphenol Corporation OQ1300810000G

    Pluggable Terminal Blocks 762 TB SOCKET OPEN RA
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    Amphenol Corporation HG1300800000G

    Fixed Terminal Blocks TB SPRING CLAMP 45D
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    Mouser Electronics HG1300800000G
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    J 13008 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    793DX-CTC3-CTC4

    Abstract: No abstract text available
    Text: VISHAY SPRAGUE www.vishay.com Capacitors Technical Note Tantalum Capacitors and Moisture Sensitivity   Vishay supplies surface mount molded and conformal coated solid tantalum capacitors with an MnO2 cathode construction. The conformal coated devices meet moisture sensitivity level rating MSL of 2a as specified in IPC/JEDEC J-STD-020D.1 and


    Original     		J-STD-020D J-STD-033. 21-Jun-13 793DX-CTC3-CTC4 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-13008 R2 P1 MBN1800F33F Target Specification Silicon N-channel IGBT 3300V F version FEATURES  Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity IGBT.


    Original     		IGBT-SP-13008 MBN1800F33F 000cycles) PDF

    DLA 13008

    Abstract: No abstract text available
    Text: 13008 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors Tantamount , Conformal Coated Case, Ultra Low ESR, DLA Approved FEATURES • High reliability • Surge current testing per MIL-PRF-55365 options • Ultra low ESR • Tin/lead SnPb termination


    Original     		MIL-PRF-55365 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 DLA 13008 PDF

    DLA 13008

    Abstract: No abstract text available
    Text: 13008 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors Tantamount , Conformal Coated Case, Ultra Low ESR, DLA Approved FEATURES • High reliability • Surge current testing per MIL-PRF-55365 options • Ultra low ESR • Tin/lead SnPb termination


    Original     		MIL-PRF-55365 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 DLA 13008 PDF

    DLA 13008

    Abstract: 13008-062MES D 13008 K
    Text: 13008 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors Tantamount , Conformal Coated Case, Ultra Low ESR, DLA Approved FEATURES • High reliability • Surge current testing per MIL-PRF-55365 options • Ultra low ESR • Tin/lead SnPb termination


    Original     		MIL-PRF-55365 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 DLA 13008 13008-062MES D 13008 K PDF

    DLA 13008

    Abstract: No abstract text available
    Text: DLA 13008 www.vishay.com Vishay Solid Tantalum Chip Capacitors TANTAMOUNT , Conformal Coated Case, Ultra Low ESR, DLA Approved FEATURES • High reliability • Surge current testing per MIL-PRF-55365 options • Ultra-low ESR • Tin / lead SnPb termination


    Original     		MIL-PRF-55365 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 DLA 13008 PDF

    DLA 13008

    Abstract: No abstract text available
    Text: 13008 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors Tantamount , Conformal Coated Case, Ultra Low ESR, DLA Approved FEATURES • High reliability • Surge current testing per MIL-PRF-55365 options • Ultra low ESR • Tin/lead SnPb termination


    Original     		MIL-PRF-55365 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 DLA 13008 PDF

    DLA 13008

    Abstract: No abstract text available
    Text: 13008 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors Tantamount , Conformal Coated Case, Ultra Low ESR, DLA Approved FEATURES • High reliability • Surge current testing per MIL-PRF-55365 options • Ultra low ESR • Tin/lead SnPb termination


    Original     		MIL-PRF-55365 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 DLA 13008 PDF

    DLA 13008

    Abstract: No abstract text available
    Text: 13008 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors Tantamount , Conformal Coated Case, Ultra Low ESR, DLA Approved FEATURES • High reliability • Surge current testing per MIL-PRF-55365 options • Ultra low ESR • Tin/lead SnPb termination


    Original     		MIL-PRF-55365 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 DLA 13008 PDF

    DLA 13008

    Abstract: No abstract text available
    Text: 13008 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors Tantamount , Conformal Coated Case, Ultra Low ESR, DLA Approved FEATURES • High reliability • Surge current testing per MIL-PRF-55365 options • Ultra low ESR • Tin/lead SnPb termination


    Original     		MIL-PRF-55365 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 DLA 13008 PDF

    DLA 13008

    Abstract: No abstract text available
    Text: 13008 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors Tantamount , Conformal Coated Case, Ultra Low ESR, DLA Approved FEATURES • High reliability • Surge current testing per MIL-PRF-55365 options • Ultra low ESR • Tin/lead SnPb termination


    Original     		MIL-PRF-55365 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 DLA 13008 PDF

    E 13009 2

    Abstract: transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l
    Text: / b aS3T31 001=113? 1 DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended fo r use


    OCR Scan     		aS3T31 O-220 MJE13008 bb53131 E 13009 2 transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l PDF

    40-12N06

    Abstract: VBO 40-08N06 160-12N07 30-14N07 160-16N07 25-16A02 VBO 24 52-08N07 VBO 22-08n08 VBO 20-16N02
    Text: 1~ Rectifier Bridges h ik â \ L -W — i - W - J ! 1~ Rectifier Bridges with Avalanche Diodes, B2U v RRM Type ► New VBO 13-12A02 VBO 13-16A02 VBO VBO VBO VBO 20-12A02 20-16A02 25-12A02 25-16A02 v 1dAV @ T1C vRMS • ^FSM 45°C 10 ms A VT0 rT "^VJM p p thJH


    OCR Scan     		13-12A02 13-16A02 20-12A02 20-16A02 25-12A02 25-16A02 13-08N02 13-12N02 13-16N02 16-12N 40-12N06 VBO 40-08N06 160-12N07 30-14N07 160-16N07 25-16A02 VBO 24 52-08N07 VBO 22-08n08 VBO 20-16N02 PDF

    B2HKF

    Abstract: B2U 250 105-14N 40-08N B2HKF 250 160-14N 22-16 diode 15-16io5 13-12A02 S 4012 R
    Text: ¡bihi; 1~ Rectifier Bridges ! L -w — L -H - 1 ! 1~ Rectifier Bridges with Avalanche Diodes, B2U 1 v vRMS IdAV ^@ T C *FSM V T0 rT ^ th J C 45° C 10 ms A V mQ ‘C 2.5 40 3.0 0.75 3.4 0.85 3.4 2.8 0.7 3.2 0.8 3.4 VBO 13-12A 02 VBO 13-16A 02 1200 1600 400


    OCR Scan     		OT-227B 3-12A 3-16A 5-12A 5-16A 55-0B 55-12io7 55-14io7 55-16i07 55-16io7 B2HKF B2U 250 105-14N 40-08N B2HKF 250 160-14N 22-16 diode 15-16io5 13-12A02 S 4012 R PDF

    D 13009 K

    Abstract: e 13009 f E 13009 2 J 13009 - 2 13009 D 13009 j 13009 13009 H npn 13009 13009 applications
    Text: TELEFUNKEN ELECTRONIC 1 ?E ]> • a^SOCHb OOO'ifc.M1} 0 TE 13008- TE 13009 T m iilF ty ilfiK lK l e le c tro n ic C rut*« Technotogw* r - 35-13 Silicon NPN Power Transistors Applications: Switching mode power supply, motor control and electronic ballast Features:


    OCR Scan     		500mA VCB-10V D 13009 K e 13009 f E 13009 2 J 13009 - 2 13009 D 13009 j 13009 13009 H npn 13009 13009 applications PDF

    SC2335

    Abstract: SE 130 13007k SC5024 SC5030 E13008 sc536 5027 to-220 se to220 KSC5027
    Text: TRANSISTORS FUNCTION GUIDE 2.3. Switching Transistors 2.3.1 TO-126, TO-220 & T 0 -3 P Type Tran sistors Condition vCE Ic A (V) (A) M IN 4 K SE 130 04 5 2 8 K SE 130 06 5 12 K S E 13008 375 0.5 400 0.5 300 450 500 800 ic Condition hFE Device (NPN) VcEO (V)


    OCR Scan     		O-126, O-220 O-220F -220F SC2335 SE 130 13007k SC5024 SC5030 E13008 sc536 5027 to-220 se to220 KSC5027 PDF

    transistor E 13009

    Abstract: transistor d 13009 D 13009 K E 13009 L transistor 13009 e 13009 f J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR
    Text: i r ^53^31 D O n iS ? 1 D E V EL O P M EN T DATA MJE 13008 MJE 13009 This data she« contains advance information and specifications are subject to change without notice. N AMER P H I L I P S / D I S C R E T E ESE D -r-3 3 -1 3 SILICON DIFFUSED POWER TRAN SISTO RS


    OCR Scan     		bfci53T31 f-33-13 T0-220 MJE13008 june1988 T-33-13 transistor E 13009 transistor d 13009 D 13009 K E 13009 L transistor 13009 e 13009 f J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR PDF

    2SC102 transistor

    Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C


    OCR Scan     		NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2SC102 transistor 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558 PDF

    2SC102 transistor

    Abstract: 2N2342 2sc102 TK30556 2N2902 M10A
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C


    OCR Scan     		PDF

    2SC102 transistor

    Abstract: 2sc102 2N2902 TK30556 1763-0625 2SC5220 2SC519 2SC520 TK30557 TK30558
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2SC102 transistor 2sc102 2N2902 TK30556 1763-0625 2SC5220 2SC519 2SC520 TK30557 TK30558 PDF

    2SC102 transistor

    Abstract: transistor 2Sc102 2SC102 1763-0625 MM4647 usaf521es071m 10MSA 2SC519 2SC520 TK30557
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 2SC102 transistor transistor 2Sc102 2SC102 1763-0625 MM4647 usaf521es071m 10MSA 2SC519 2SC520 TK30557 PDF

    2sc102

    Abstract: 2SC102 transistor T0-63 1763-0625 2sc113 2SC519 2SC520 TK30556 TK30557 TK30558
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A 2sc102 2SC102 transistor T0-63 1763-0625 2sc113 2SC519 2SC520 TK30556 TK30557 TK30558 PDF

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


    OCR Scan     		38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 PDF

    transistor E 13009

    Abstract: transistor d 13009 n752 E13009 E 13009 J 13009 - 2 E 13009 TRANSISTOR motorola e 13009 p D 13009 K e 13009 l
    Text: MOTOROLA SC XSTRS/R 1 S E 0 I ti3ti725M 0 G Ö 5 4 0 3 F r - MOTOROLA TECHNICAL DATA e s i g n e r s 3 * - / 3 MJE13008 MJE13009 SEMICONDUCTOR D 3 | D a t a . S h e e t 12 A M P E R E NPN SILICON POWER TRANSISTORS 3 0 0 and 4 0 0 V O L T S 100 W A T T S SWITCHMODE SE R IE S


    OCR Scan     		ti3ti725M MJE13008 MJE13009 transistor E 13009 transistor d 13009 n752 E13009 E 13009 J 13009 - 2 E 13009 TRANSISTOR motorola e 13009 p D 13009 K e 13009 l PDF