ixfh50n60
Abstract: 50n60p IXFT50N60P3 IXFQ50N60P3 ixfh50n60p3 50N60P3 DS100310 N-channel MOSFET to-247 50a 50n60 N-channel MOSFET to-247 50a 600v
Text: Advance Technical Information IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 600V = 50A Ω ≤ 145mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol
|
Original
|
PDF
|
IXFT50N60P3
IXFQ50N60P3
IXFH50N60P3
O-268
O-247
50N60P3
ixfh50n60
50n60p
ixfh50n60p3
DS100310
N-channel MOSFET to-247 50a
50n60
N-channel MOSFET to-247 50a 600v
|
50n60p
Abstract: No abstract text available
Text: Preliminary Technical Information Polar3TM HiperFETTM Power MOSFETs VDSS ID25 IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 = 600V = 50A Ω ≤ 145mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ)
|
Original
|
PDF
|
IXFT50N60P3
IXFQ50N60P3
IXFH50N60P3
O-268
T1000
IXFT50N60P3
50N60P3
50n60p
|
42N50
Abstract: 42N50P2
Text: Advance Technical Information IXFH42N50P2 IXFT42N50P2 PolarP2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 42A Ω ≤ 145mΩ TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS
|
Original
|
PDF
|
IXFH42N50P2
IXFT42N50P2
O-247
42N50P2
7J-N45
42N50
|
ixfn56n90p
Abstract: ixfn*56N90P 56N90P 56N90
Text: IXFN56N90P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 900V 56A Ω 145mΩ 300ns miniBLOC E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR
|
Original
|
PDF
|
IXFN56N90P
300ns
E153432
56N90P
ixfn56n90p
ixfn*56N90P
56N90
|
Untitled
Abstract: No abstract text available
Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN56N90P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 900V 56A Ω 145mΩ 300ns miniBLOC E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR
|
Original
|
PDF
|
IXFN56N90P
300ns
E153432
56N90P
|
Untitled
Abstract: No abstract text available
Text: IXFN56N90P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 900V 56A 145m 300ns miniBLOC E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C
|
Original
|
PDF
|
IXFN56N90P
300ns
E153432
56N90P
|
ixfh50n60
Abstract: 50N60P IXFT50N60P3 ixfh50n60p3
Text: Preliminary Technical Information IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Polar3TM HiperFETTM Power MOSFETs VDSS ID25 = 600V = 50A Ω ≤ 145mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ)
|
Original
|
PDF
|
IXFT50N60P3
IXFQ50N60P3
IXFH50N60P3
O-268
O-247
50N60P3
ixfh50n60
50N60P
ixfh50n60p3
|
Untitled
Abstract: No abstract text available
Text: Polar2TM HiperFETTM Power MOSFET VDSS ID25 IXFH42N50P2 IXFT42N50P2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol = 500V = 42A Ω ≤ 145mΩ Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR
|
Original
|
PDF
|
IXFH42N50P2
IXFT42N50P2
O-247
42N50P2
7J-N45
|
42n50
Abstract: No abstract text available
Text: IXFH42N50P2 IXFT42N50P2 Polar2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 42A Ω ≤ 145mΩ TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR
|
Original
|
PDF
|
IXFH42N50P2
IXFT42N50P2
O-247
O-268
062in.
42N50P2
7J-N45
42n50
|
Untitled
Abstract: No abstract text available
Text: MWI 100-12 T8T IC25 = 145 A = 1200 V VCES VCE sat typ. = 1.7 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 30,31,32 16,17,18 19 1 2 5 27, 28, 29 3 4 9 24, 25, 26 6 21, 22, 23 10 NTC 11 7 8 E72873 See outline drawing for pin arrangement
|
Original
|
PDF
|
E72873
20070912a
|
Untitled
Abstract: No abstract text available
Text: MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IC25 = 160 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 1 7 6 3 4 5 2 MDI 1 3 4 5 1 7 6 3 2 1 4 5 6 7 3 2 2 E 72873 Preliminary data Symbol Conditions Maximum Ratings
|
Original
|
PDF
|
D-68623
|
100-12T8T
Abstract: No abstract text available
Text: MWI 100-12 T8T IC25 = 145 A = 1200 V VCES VCE sat typ. = 1.7 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 30,31,32 16,17,18 19 1 2 5 27, 28, 29 9 24, 25, 26 6 21, 22, 23 10 3 7 11 4 8 12 NTC 20 33,34,35 13,14,15 Features IGBTs Conditions
|
Original
|
PDF
|
|
pcb diagram welding inverter
Abstract: MWI100-12T8T resonant inverter for welding mwi10012t8t pcb diagram power supply welding inverter
Text: MWI100-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 145 A VCE sat = 1.7 V Part name (Marking on product) MWI100-12T8T 16, 17, 18 30, 31, 32 19 10 6 2 27 28 29 NTC 9 5 1 24 25 26 21 22 23 E 72873 20 3 7 11 4 8 12 Pin configuration see outlines. 13, 14, 15
|
Original
|
PDF
|
MWI100-12T8T
20081209b
/-15V,
pcb diagram welding inverter
MWI100-12T8T
resonant inverter for welding
mwi10012t8t
pcb diagram power supply welding inverter
|
pcb diagram welding inverter
Abstract: MWI100-12T8T NTC solar sensor
Text: MWI100-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 145 A VCE sat = 1.7 V Part name (Marking on product) MWI100-12T8T 16, 17, 18 30, 31, 32 5 1 19 6 2 27 28 29 NTC 9 10 24 25 26 21 22 23 E 72873 20 3 7 11 4 8 12 Pin configuration see outlines. 13, 14, 15
|
Original
|
PDF
|
MWI100-12T8T
20080603a
/-15V,
pcb diagram welding inverter
MWI100-12T8T
NTC solar sensor
|
|
|
40N60SCD1
Abstract: ixkf40n60scd1 IXYS DS 145
Text: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 41 A RDS on) typ. = 60 mΩ trr = 70 ns with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS Preliminary data 1 DF 1 T 2 5 E72873
|
Original
|
PDF
|
40N60SCD1
E72873
20110201b
40N60SCD1
ixkf40n60scd1
IXYS DS 145
|
Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH160N10T IXTQ160N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V
|
Original
|
PDF
|
IXTH160N10T
IXTQ160N10T
O-247
160N10T
1-16-06-A
|
IXYS DS 145
Abstract: IXTA160N10T7 ds 430
Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N10T7 VDSS ID25 RDS on = 100 V = 160 A Ω ≤ 7.0 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
|
Original
|
PDF
|
IXTA160N10T7
160N10T
1-16-06-A
IXYS DS 145
IXTA160N10T7
ds 430
|
IXTH160N10T
Abstract: IXTQ160N10T
Text: Preliminary Technical Information IXTH160N10T IXTQ160N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V
|
Original
|
PDF
|
IXTH160N10T
IXTQ160N10T
O-247
160N10T
1-16-06-A
IXTH160N10T
IXTQ160N10T
|
Untitled
Abstract: No abstract text available
Text: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS ID25 RDS on) typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = 600 V = 41 A = 60 m = 70 ns in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS DF Preliminary data 1 1 2 T 5 E72873 2
|
Original
|
PDF
|
40N60SCD1
E72873
20110201b
|
Untitled
Abstract: No abstract text available
Text: MWI100-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 145 A VCE sat = 1.7 V Part name (Marking on product) MWI100-12T8T 16, 17, 18 30, 31, 32 19 20 10 6 2 27 28 29 NTC 9 5 1 24 25 26 21 22 23 3 7 11 4 8 12 E72873 Pin coniguration see outlines. 13, 14, 15
|
Original
|
PDF
|
MWI100-12T8T
E72873
20100910c
|
pcb diagram welding inverter
Abstract: solar inverters circuit diagram MWI100-12T8t ntc 2200 15 solar inverter circuit solar inverter pcb E72873 MWI100-12
Text: MWI100-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 145 A VCE sat = 1.7 V Part name (Marking on product) MWI100-12T8T 16, 17, 18 30, 31, 32 19 20 10 6 2 27 28 29 NTC 9 5 1 24 25 26 21 22 23 3 7 11 4 8 12 E72873 Pin configuration see outlines. 13, 14, 15
|
Original
|
PDF
|
MWI100-12T8T
E72873
20100910c
pcb diagram welding inverter
solar inverters circuit diagram
MWI100-12T8t
ntc 2200 15
solar inverter circuit
solar inverter pcb
E72873
MWI100-12
|
ixys vub 70 -16no1
Abstract: sensor marking code 145A VUB145-16NOXT
Text: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A
|
Original
|
PDF
|
145-16NO1
VUB145-16NO1
E72873
20101007a
ixys vub 70 -16no1
sensor marking code 145A
VUB145-16NOXT
|
diode 14512 H
Abstract: No abstract text available
Text: Li IXYS Mil 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IGBT Modules lC25 = 160 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^CE sat typ. = ^ Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions Maximum Ratings
|
OCR Scan
|
PDF
|
D-68623
diode 14512 H
|
IXYS DS 145
Abstract: diode 14512 H
Text: ÖIXYS Mil 145*12 A3 MIO 145*12 A3 U m 145-12 A3 IGBT M odules lC25 = 160 A Short Circuit SOA Capability Square RBSOA ^ ces ” ^ ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- isÖL • i : E 72873 P relim in ary data S ym bo l C o n d itio n s
|
OCR Scan
|
PDF
|
60--I-
D-68623
IXYS DS 145
diode 14512 H
|