IXYS IXBOD
Abstract: lt 747 bod ixys
Text: D IX Y S Breakover Diodes Applications • Transient voltage protection • High-voltage switches • Crowbar • Lasers • Pulse generators o- 1998 IXYS All rights reserved H -1 mmm IXBOD 1 -06.10 1A. X U Single Breakover Diode =600 - 1000V ^AVM ”
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035x2m
IXYS IXBOD
lt 747
bod ixys
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Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 V IXSX35N120All 1S I Combi Pack Short Circuit SOA Capability CES 1200 V 70 A C25 V 4V CE SAT PLUS TO-247 SMD (IXSX35N120AU1S) Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C
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IXSX35N120AU1
IXSX35N120All
O-247â
IXSX35N120AU1S)
IXSX35N120AU1S
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Untitled
Abstract: No abstract text available
Text: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2
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N100U1
N100AU1
O-247
10N100U1
10N100AU1
4bflb22b
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Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSK35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C
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IXSK35N120AU1
O-26re
IXSK35N120AU1
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Untitled
Abstract: No abstract text available
Text: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS ID25 RDS on) typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = 600 V = 41 A = 60 m = 70 ns in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS DF Preliminary data 1 1 2 T 5 E72873 2
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40N60SCD1
E72873
20110201b
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single phase UPS 230V
Abstract: 230v ac dc smps circuit
Text: VUM 85-05A Advanced Technical Information VDSS = 500 V ID25 = 140 A Ω RDS on = 33 mΩ Rectifier Module for Three Phase Power Factor Correction VRRM (Diode) VDSS V V 500 500 Symbol Type VUM 85-05A Conditions Maximum Ratings Features MOSFET T 1 VDSS VGSM
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5-05A
D-68623
single phase UPS 230V
230v ac dc smps circuit
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UL758
Abstract: No abstract text available
Text: VMM 650-01F VDSS Dual Power HiPerFETTM Module ID25 RDS on = 100 V = 680 A Ω = 1.8 mΩ Phaseleg Configuration Preliminary Data Features MOSFET T1 + T2 Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 100 V ±20 V ID25 ID80 TC = 25°C TC = 80°C
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650-01F
UL758,
ZY180L
350mm
ZY180R
D-68623
UL758
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Untitled
Abstract: No abstract text available
Text: DSS25-0025B V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 25 A 0.45 V Part number DSS25-0025B 3 1 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power supplies SMPS
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DSS25-0025B
O-220
25-0025B
60747and
20071001b
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Untitled
Abstract: No abstract text available
Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectiier Boost Diode VRRM = 1600 V VRRM Module for Power Factor Correction MOSFET = 600 V VDSS 60 A ID25 = 600 V = A IDAV = 106 A IF25 IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 m = 50 Part name (Marking on product)
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33-06PH
VUM33-06PH
20100921b
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Abstract: No abstract text available
Text: DSSK18-0025BS preliminary V RRM = 25 V I FAV = 2x 10 A V F = 0.37 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power
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DSSK18-0025BS
O-263
DSB30C30PB
O-220
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Abstract: No abstract text available
Text: IXFF 24N100 HiPerFETTM Power MOSFET in High Voltage ISOPLUS i4-PACTM ID25 = 22 A VDSS = 1000 V Ω RDSon = 390 mΩ 5 1 1 5 2 Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25 IF90 diode TC = 25°C
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24N100
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Untitled
Abstract: No abstract text available
Text: MKE 11R600DCGFC ID25 = 15 A VDSS = 600 V RDS on max = 0.165 CoolMOS 1) Power MOSFET with SiC Diode Boost topology ISOPLUS i4™ 3 Electrically isolated back surface 2500 V electrical isolation SiC D 4 1 1 E72873 T 2 Features MOSFET T Symbol Conditions
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11R600DCGFC
E72873
20100920a
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DIODE PN junction diode
Abstract: No abstract text available
Text: DSA 20 C 100 PN advanced V RRM = 100 V I FAV = 2x 10 A V F = 0.72 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: isolated Applications: Features / Advantages: Rectifiers in switch mode power
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O-220FP
DSA20C100PN
O-220
O-220ACFP
60747and
DIODE PN junction diode
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1XFH12n100
Abstract: transistor 13n80
Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure
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4bflb22b
1532A
200ns)
IXFH12N100
IXFH10N100
IXFM12N100
IXFM10N100
1XFH12n100
transistor 13n80
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Untitled
Abstract: No abstract text available
Text: DSA 30 C 150 HB advanced V RRM = 150 V I FAV = 2x 15 A V F = 0.74 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power supplies SMPS
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O-247
60747and
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IXYS IGBT
Abstract: igbt 600V 600A short circuit
Text: QIXYS VI0600-12S Advanced Technical Information VCE= 1200 V Hybrid IGBT Power Modules lc =60A COLLECTOR COLLECTOR KELVIN GATE Symbol Condition V cH S Ts = 25°C Max. Rating v GES >c >c I CM *F 'PM PC Ts = 25°C Ts = 80°C Ts = 25°C , 1ms V V 600 A A A 1200
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VI0600-12S
50/60HZ,
D-68619
Q-68619
IXYS IGBT
igbt 600V 600A short circuit
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Untitled
Abstract: No abstract text available
Text: DSA 60 C 60 HB tentative V RRM = 60 V I FAV = 2x 30 A V F = 0.65 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power
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O-247
60747and
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DMA90U1800LB
Abstract: No abstract text available
Text: DMA90U1800LB 3~ Rectifier Standard Rectifier VRRM = 1800 V I DAV = 90 A I FSM = 350 A ISOPLUS Surface Mount Power Device 3~ Rectifier Bridge Part number DMA90U1800LB Backside: isolated 1/2/3 7 8 9 4/5/6 Features / Advantages: Applications: Package: SMPD
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DMA90U1800LB
60747and
20130523a
DMA90U1800LB
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information MMIX1F230N20T GigaMOSTM TrenchTM HiperFETTM Power MOSFET VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 200V 168A Ω 8.3mΩ 200ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F230N20T
200ns
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information GigaMOSTM TrenchTM HiperFETTM Power MOSFET MMIX1F230N20T VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 200V 168A Ω 8.3mΩ 200ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F230N20T
200ns
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Abstract: No abstract text available
Text: Advance Technical Information MMIX1F160N30T GigaMOSTM TrenchTM HiperFETTM Power MOSFET VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 300V 102A Ω 20mΩ 200ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F160N30T
200ns
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information GigaMOSTM Power MOSFET VDSS ID25 IXFN180N25T = = 250V 155A Ω 12.9mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings
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IXFN180N25T
200ns
OT-227
E153432
180N25T
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Untitled
Abstract: No abstract text available
Text: VUM 33-05N ID25 = 47 A VDSS = 500 V RDS on = 0.12 Ω Power MOSFET Stage for Boost Converters Module for Power Factor Correction VRRM (Diode) VDSS V V 600 500 5 Type 1 3 2 7 8 1 4 6 3 4 2 VUM 33-05N 5 7 8 Conditions VDSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kΩ
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33-05N
33-05N
150fc
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D-68623
Abstract: No abstract text available
Text: Advanced Technical Information VMD 600-007S VDSS = 70 V = 620 A ID25 Ω RDS on typ. = 1.6 mΩ 3 Dual Power HiPerFETTM Module with Schottky Diode N-Channel Enhancement Mode 1 2 3 1 11 10 2 Symbol Conditions VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 10 kΩ
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600-007S
D-68623
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