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    IXYS CLASS D SWITCHING AMPLIFIERS Search Results

    IXYS CLASS D SWITCHING AMPLIFIERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy

    IXYS CLASS D SWITCHING AMPLIFIERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXAN0062

    Abstract: 1000V P-channel MOSFET DMOSFET "Power MOSFETs" power mosfets mosfet 1000v Silicon MOSFET 1000V mosfets P-Channel Depletion Mosfets depletion mode power mosfet
    Text: IXAN0062 IXYS Power MOSFET Products Abdus Sattar, IXYS Corporation This paper presents IXYS Corporation’s power MOSFET products and their typical application information. Power MOSFETs are widely used in power switching applications due to their features of easy control, fast


    Original     		PDF IXAN0062 IXAN0062 1000V P-channel MOSFET DMOSFET "Power MOSFETs" power mosfets mosfet 1000v Silicon MOSFET 1000V mosfets P-Channel Depletion Mosfets depletion mode power mosfet

    IXTP220N04T2

    Abstract: IRF2204 IXTA200N055T2 IXYS Class D Switching Amplifiers IXTA100N04T2 IXTA120N04T2 IXTA220N04T2 IXTA90N055T2 IXTP100N04T2 IXTP120N04T2
    Text: IXYS POWER Efficiency through Technology N E W P R O D U C T B RI E F 40V – 75V TrenchT2TM MOSFETs Next Generation Trench Power MOSFETs MAY 2008 OVERVIEW IXYS’ next generation TrenchT2TM Power MOSFETs are designed and optimized to meet the thermal and electrical performance of today’s energy and power management


    Original     		PDF O-220 IXTP220N04T2 IRF2204 IXTA200N055T2 IXYS Class D Switching Amplifiers IXTA100N04T2 IXTA120N04T2 IXTA220N04T2 IXTA90N055T2 IXTP100N04T2 IXTP120N04T2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA160N04T2 IXTP160N04T2 VDSS ID25 = 40V = 160A Ω ≤ 5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR


    Original     		PDF IXTA160N04T2 IXTP160N04T2 O-263 160N04T2 10-31-08-B

    IXTA300N04T2-7

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA300N04T2-7 VDSS ID25 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTA300N04T2-7 O-263 062in. 300N04T2 1-10-08-A IXTA300N04T2-7

    220N04T2

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V


    Original     		PDF IXTA220N04T2-7 O-263 220N04T2 3-06-08-A 4-24-08-C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTA300N04T2-7 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTA300N04T2-7 O-263 300N04T2 1-10-08-A

    IXTP220N04T2

    Abstract: IXTP 220N04T2 220N04T2 IXTA220N04T2 MOSFET IXYS TO-220 *9918c ixta220n04 220N04 DS99918C
    Text: IXTA220N04T2 IXTP220N04T2 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V VGSM Transient


    Original     		PDF IXTA220N04T2 IXTP220N04T2 O-263 O-220 062in. 220N04T2 12-15-08-D IXTP220N04T2 IXTP 220N04T2 IXTA220N04T2 MOSFET IXYS TO-220 *9918c ixta220n04 220N04 DS99918C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA300N04T2 IXTP300N04T2 VDSS ID25 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40


    Original     		PDF IXTA300N04T2 IXTP300N04T2 O-263 300N04T2

    IXTA160N04T2

    Abstract: 160N04 IXTP160N04T2
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA160N04T2 IXTP160N04T2 VDSS ID25 = 40V = 160A Ω ≤ 5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR


    Original     		PDF IXTA160N04T2 IXTP160N04T2 O-263 160N04T2 10-31-08-B IXTA160N04T2 160N04 IXTP160N04T2

    IXTP120N04T2

    Abstract: max2847 120a16
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA120N04T2 IXTP120N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTA120N04T2 IXTP120N04T2 O-263 O-220 062in. 120N04T2 IXTP120N04T2 max2847 120a16

    220N04T2

    Abstract: No abstract text available
    Text: TrenchT2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V


    Original     		PDF IXTA220N04T2-7 O-263 062in. 220N04T2 4-24-08-C

    IXTP300N04T2

    Abstract: nf 931 diode to220 IXTA300N04T2 1416T T300N IXYS Class D Switching Amplifiers
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA300N04T2 IXTP300N04T2 VDSS ID25 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40


    Original     		PDF IXTA300N04T2 IXTP300N04T2 O-263 O-220 300N04T2 IXTP300N04T2 nf 931 diode to220 IXTA300N04T2 1416T T300N IXYS Class D Switching Amplifiers

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchT2TM Power MOSFET IXTV270N055T2 IXTV270N055T2S VDSS ID25 = 55V = 270A Ω ≤ 3.0mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS220 (IXTV) G Symbol Test Conditions VDSS TJ = 25°C to 175°C


    Original     		PDF IXTV270N055T2 IXTV270N055T2S PLUS220 270N055T2 3-10-A

    IXTV270N055T2

    Abstract: IXTV270N055T2S PLUS220SMD 270N0 51310a
    Text: Advance Technical Information IXTV270N055T2 IXTV270N055T2S TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS ID25 RDS on PLUS220 (IXTV) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTV270N055T2 IXTV270N055T2S PLUS220 270N055T2 3-10-A IXTV270N055T2 IXTV270N055T2S PLUS220SMD 270N0 51310a

    Untitled

    Abstract: No abstract text available
    Text: TrenchT2TM Power MOSFET VDSS ID25 IXTA120N04T2 IXTP120N04T2 = 40V = 120A Ω ≤ 6.1mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTA120N04T2 IXTP120N04T2 O-263 O-220 120N04T2 2-15-08-A

    IXTH300N04T2

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTH300N04T2 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTH300N04T2 O-247 300N04T2 12-15-08-B IXTH300N04T2

    IXTP220N04T2

    Abstract: IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2 IXTP220N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 40V = 220A Ω ≤ 3.5mΩ TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40


    Original     		PDF IXTA220N04T2 IXTP220N04T2 O-263 O-220 220N04T2 04-24-08-C IXTP220N04T2 IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75

    DS99918C

    Abstract: IXTP 220N04T2 220N04T2 IXTP220N04T2
    Text: TrenchT2TM Power MOSFET VDSS ID25 IXTA220N04T2 IXTP220N04T2 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V VGSM Transient


    Original     		PDF IXTA220N04T2 IXTP220N04T2 O-263 O-220 220N04T2 12-15-08-D DS99918C IXTP 220N04T2 IXTP220N04T2

    220N04

    Abstract: No abstract text available
    Text: TrenchT2TM Power MOSFET VDSS ID25 IXTA220N04T2-7 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V


    Original     		PDF IXTA220N04T2-7 O-263 062conds 220N04T2 4-24-08-C 220N04

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns FMP26-02P VDSS 43 ID25 T1 5 34 T2 (Electrically Isolated Tab) 11 22 Symbol Test Conditions


    Original     		PDF 240ns 150ns FMP26-02P 50/60HZ,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology FMP26-02P P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns VDSS 43 ID25 T1 5 34 (Electrically Isolated Tab) T2 11 22 Symbol Test Conditions


    Original     		PDF FMP26-02P 240ns 150ns 50/60HZ, 00A/s

    IXTH300N04T2

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTH300N04T2 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTH300N04T2 O-247 300N04T2 12-15-08-B IXTH300N04T2

    IXTP220N04T2

    Abstract: No abstract text available
    Text: IXTA220N04T2 IXTP220N04T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on = 40V = 220A Ω ≤ 3.5mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTA220N04T2 IXTP220N04T2 O-263 O-220AB 220N04T2 5-12-10-E IXTP220N04T2

    IXTP170N075T2

    Abstract: ixtp170n075 T170N IXTA170N075T2 170N075T2
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA170N075T2 IXTP170N075T2 VDSS ID25 = 75V = 170A Ω ≤ 5.4mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75


    Original     		PDF IXTA170N075T2 IXTP170N075T2 O-263 O-220 170N075T2 IXTP170N075T2 ixtp170n075 T170N IXTA170N075T2