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    IXYS 1210 Search Results

    IXYS 1210 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LPD4012-103MLB Coilcraft Inc General Purpose Inductor, 10uH, 20%, 2 Element, Ferrite-Core, SMD, 1616, CHIP, 1616, ROHS COMPLIANT Visit Coilcraft Inc
    LPO4812-104KLB Coilcraft Inc General Purpose Inductor, 100uH, 10%, 1 Element, Ferrite-Core, SMD, 1918, ROHS COMPLIANT Visit Coilcraft Inc
    LPR4012-103DMLB Coilcraft Inc General Purpose Inductor, 10uH, 20%, 2 Element, Ferrite-Core, SMD, 4040-12M, CHIP, 4040-12M, ROHS COMPLIANT Visit Coilcraft Inc
    MSS1210-105KED Coilcraft Inc General Purpose Inductor, 1000uH, 10%, 1 Element, Ferrite-Core, SMD, CHIP, 4747 Visit Coilcraft Inc
    MSS1210-155KED Coilcraft Inc General Purpose Inductor Visit Coilcraft Inc

    IXYS 1210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Dsei 2x101-12A

    Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
    Text: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000


    Original     		PDF O-252 0-06A 0-10A 0-12A D1-16 D1-18 D1-20 0-02A Dsei 2x101-12A ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b

    30u60

    Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
    Text: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600


    Original     		PDF -200A/ TB60S TA60CS TA60C 04E120 09E120 30u60 ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06

    mw 137 600g

    Abstract: transistor 5cw 069UR1S0250B bs88-4 070US3U1400B 110UR2S0800B transistor 6cw 069UR1S0350B transistor 5cw 61 IXYS CATALOGUE
    Text: ULTRA RAPID SEMICONDUCTOR PROTECTION FUSES ULTRA RAPID SEMICONDUCTOR PROTECTION FUSES WESTCODE CATALOGUE Westcode Semiconductors Ltd Issue 6 – March 2005 ULTRA RAPID SEMICONDUCTOR PROTECTION FUSES Contents 1. Introduction 2 2. Applications & Definitions


    Original     		PDF

    IXDD 614

    Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
    Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers


    Original     		PDF AN0002 RH159NB D-68623; IXDD 614 BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS

    IXCP10M90S

    Abstract: IX2R11P7 10M90s IXTH14N60P 78L15 DSEI12-10A IX2R11 IX2R11S3 IXDD414 IXCP
    Text: IX2R11 IX2R11 500 Volt, 2 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap power supply along with a Low Side Driver. • Fully operational to 500V • ± 50V/ns dV/dt immunity


    Original     		PDF IX2R11 IX2R11 IX2R11S3 IX2R11P7 Edisonstrasse15 D-68623; IXCP10M90S 10M90s IXTH14N60P 78L15 DSEI12-10A IXDD414 IXCP

    ixgn100n170

    Abstract: 100N170 IC1700 ixgn100n
    Text: Preliminary Technical Information High Voltage IGBT IXGN100N170 VCES = 1700V IC90 = 95A VCE sat ≤ 3.0V E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES


    Original     		PDF IXGN100N170 OT-227B, E153432 100N170 ixgn100n170 IC1700 ixgn100n

    ixgk100n170

    Abstract: 100N170 IXGX100N170 PLUS247
    Text: Preliminary Technical Information IXGK100N170 IXGX100N170 High Voltage IGBT VCES = 1700V IC90 = 100A VCE sat ≤ 3.0V TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous


    Original     		PDF IXGK100N170 IXGX100N170 O-264 100N170 ixgk100n170 IXGX100N170 PLUS247

    IXCP10M90S

    Abstract: IX6R11S6 18-PIN 10m90s
    Text: IX6Q11 1 MHz, 300 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 300V* • ± 50V/ns dV/dt immunity


    Original     		PDF IX6Q11 IX6Q11 IXTU01N100 IX6Q11S3 IX6Q11S6 IXCP10M90S IX6R11S6 18-PIN 10m90s

    IXTH2N150L

    Abstract: IXTH2N150
    Text: Advance Technical Information LinearTM Power MOSFET w/Extended FBSOA IXTH2N150L VDSS ID25 = 1500V = 2A  15  RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C


    Original     		PDF IXTH2N150L O-247 100ms 2N150L IXTH2N150L IXTH2N150

    IX6R11P7

    Abstract: No abstract text available
    Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity


    Original     		PDF IX6R11 IX6R11 IX6R11S6 IX6R11S3 IX6R11P7

    din IEC 68

    Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
    Text: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types


    Original     		PDF

    10M90S

    Abstract: IXTH14N60P IX6R11 IX6R11S3 IX6R11P7 IXFH14N100Q IXCP 10M90 DSEI12-10A igbt 500V 22A
    Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity


    Original     		PDF IX6R11 IX6R11 IX6R11S6 IX6R11S3 10M90S IXTH14N60P IX6R11S3 IX6R11P7 IXFH14N100Q IXCP 10M90 DSEI12-10A igbt 500V 22A

    sj 8207

    Abstract: pu 516 abb 8522-389 rectificadores Phoenix Contact 29 61 202 WiNEDGE ST 12107 New Age Electronics Aki Electronic
    Text: North and South American Distributors Distribution Catalog Sales: Digi-key Corporation 800-344-4539 218-681-6674 Alabama All American Huntsville, AL 205-837-1555 Future Electronics Huntsville, AL 205-971-2010 Nu Horizons Huntsville, AL 205-722-9330 Nu Horizons


    Original     		PDF

    ixys dsei 12-10a

    Abstract: 24A12 IXYS 12-10A diode 6A 1000v
    Text: DSEI 12-10A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAV = 12 A VRRM = 1000 V trr = 50 s Type A C TO-220 AC C  A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5


    Original     		PDF 2-10A O-220 ixys dsei 12-10a 24A12 IXYS 12-10A diode 6A 1000v

    Untitled

    Abstract: No abstract text available
    Text: DSEI 12-12A IFAV = 11 A VRRM = 1200 V trr = 50 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type A C TO-220 AC C A DSEI 12-12A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 00°C; rectangular, d = 0.5 tp < 0 µs; rep. rating, pulse width limited by TVJM


    Original     		PDF 2-12A O-220 2-10A

    Untitled

    Abstract: No abstract text available
    Text: DSEI 12-10A IFAV = 12 A VRRM = 1000 V trr = 50 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 Type A C TO-220 AC C A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 00°C; rectangular, d = 0.5 tp < 0 µs; rep. rating, pulse width limited by TVJM


    Original     		PDF 2-10A O-220

    ixys dsei 12-12a

    Abstract: 12-12A ixys dsei 120 1212a TO-220 1200V 11A DSEI IXYS ixys dsei 12 ixys dsei 12-10a
    Text: DSEI 12-12A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 s Type A C TO-220 AC C  A DSEI 12-12A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5


    Original     		PDF 2-12A O-220 2-10A ixys dsei 12-12a 12-12A ixys dsei 120 1212a TO-220 1200V 11A DSEI IXYS ixys dsei 12 ixys dsei 12-10a

    BERULUB FR 16 B

    Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
    Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power


    Original     		PDF IXBH40N160, BERULUB FR 16 B circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram

    Untitled

    Abstract: No abstract text available
    Text: IXTH10N100D IXTT10N100D High Voltage MOSFETs VDSX ID25 RDS on = = ≤ 1000V 10A Ω 1.4Ω N-Channel, Depletion Mode TO-268 (IXTT) G S Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSX


    Original     		PDF IXTH10N100D IXTT10N100D O-268 O-247) O-268 O-247 IXTT10N100D IXTH10N100D 100ms

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFN36N110P VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFN36N110P OT-227 36N110P

    BERULUB FR 16

    Abstract: ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B
    Text: Application Notes & Technical Information Volume 2 Volume 1 Contents Title Page Standard IGBT "G" Series M1 - 2 What is a HiPerFET Power Mosfet? M1 - 3 New 1600 V BIMOSFET Transistors Open up New Appl. M1 - 5 Comparative Performance of BIMOSFET in FLY Back Converter Circuits


    Original     		PDF ISOPLUS247 UC3854A UC3854B DN-44, TDA4817 BERULUB FR 16 ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B

    GD Rectifiers

    Abstract: Kopp MS 85 rectificadores bn16 Kopp "MS 85" BROWN BOVERI 125 kw Kopp MS 84 G8N8 edis Shenzhen Abt Electronic
    Text: ADVANCED TECHNICAL INFORMATION Gate Controlled Current Limiter IXCP 01N90E IXCY 01N90E VDSS = 900 V ID limit = 250 mA RDS(on) = 80 W N-Channel, Enhancement Mode D G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 01N90E O-252 O-220) O-220 O-251/252 GD Rectifiers Kopp MS 85 rectificadores bn16 Kopp "MS 85" BROWN BOVERI 125 kw Kopp MS 84 G8N8 edis Shenzhen Abt Electronic

    IXYS DSEI 2X121-02a

    Abstract: ixys dsei 2x30-12b DSEI IXYS 2x31-12B ixys dsei 1x31-06c IXYS DSEI 2 DSEI 120-06A 1x31-06c dsei 2x60 IXYS DSEI 2X61-12B DSEI IXYS 2x31
    Text: IXYS _ FRED Contents K Package style/Bauform Type Page ns 1b TO-252AA 1 TO-220 AC 1a TO-263AA 35 35 35 k \ 1a 2 TO-247 AD 2a TO-247 AD 2b ISOPLUS 247 3 SOT-227 B, miniBLOC new DSEI6-06AS DSEI 8-06A DSEI 8-06AS D1-2 D1-4 D1-4 35 50 50 40


    OCR Scan     		PDF O-252AA DSEI6-06AS 8-06AS 2-06A 2-10A 2-12A 0-12A 19-06AS 36-06AS 0-06A IXYS DSEI 2X121-02a ixys dsei 2x30-12b DSEI IXYS 2x31-12B ixys dsei 1x31-06c IXYS DSEI 2 DSEI 120-06A 1x31-06c dsei 2x60 IXYS DSEI 2X61-12B DSEI IXYS 2x31

    Untitled

    Abstract: No abstract text available
    Text: « Three-Phase Half Controlled Rectifier Bridges v nsu v DSM v*RRM v DRU V V 1300 1500 1700 1200 1400 1600 Symbol Test Conditions ^dAVM ^FRUS> ^TRMS T k = 100°C; module module per leg *FSM» ^TBM TVJ = 45°C; dv/dt w Ì-W fifll VVZ 24-12101 VVZ 24-14101


    OCR Scan     		PDF 24-16io1 VVZ24 4bflb22b