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    IXXK110N65B4H1 Price and Stock

    IXYS Corporation IXXK110N65B4H1

    IGBT 650V 240A 880W TO264
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    DigiKey IXXK110N65B4H1 Tube 284 1
    • 1 $14.69
    • 10 $14.69
    • 100 $13.9668
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    Mouser Electronics IXXK110N65B4H1 486
    • 1 $21.77
    • 10 $19.35
    • 100 $16.92
    • 1000 $14.44
    • 10000 $14.44
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    Future Electronics IXXK110N65B4H1 Tube 225 46 Weeks 25
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    • 100 $14.89
    • 1000 $14.7
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    IXXK110N65B4H1 Tube 46 Weeks 25
    • 1 -
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    • 100 $14.89
    • 1000 $14.7
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    TTI IXXK110N65B4H1 Tube 100 25
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    • 100 $13.87
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    TME IXXK110N65B4H1 293 1
    • 1 $24.44
    • 10 $19.45
    • 100 $17.48
    • 1000 $17.48
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    New Advantage Corporation IXXK110N65B4H1 175 1
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    • 100 $20.59
    • 1000 $19.21
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    Littelfuse Inc IXXK110N65B4H1

    Trans IGBT Chip N-CH 650V 250A 880W 3-Pin(3+Tab) TO-264AA
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    Verical IXXK110N65B4H1 250 4
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    • 10 $16.8154
    • 100 $15.64
    • 1000 $15.3484
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    IXXK110N65B4H1 50 4
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    • 10 $16.8154
    • 100 $15.9756
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    Newark IXXK110N65B4H1 Bulk 262 1
    • 1 $21.34
    • 10 $18.91
    • 100 $16.59
    • 1000 $14.16
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    Quest Components IXXK110N65B4H1 240
    • 1 $24.968
    • 10 $24.968
    • 100 $19.9744
    • 1000 $19.9744
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    CoreStaff Co Ltd IXXK110N65B4H1 50
    • 1 $17.166
    • 10 $12.357
    • 100 $12.357
    • 1000 $12.357
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    IXYS Integrated Circuits Division IXXK110N65B4H1

    IGBT DIS.DIODE SINGLE 110A 650V XPT TO264
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    Ozdisan Elektronik IXXK110N65B4H1
    • 1 $24.42532
    • 10 $24.42532
    • 100 $22.8274
    • 1000 $22.8274
    • 10000 $22.8274
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    IXXK110N65B4H1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXXK110N65B4H1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 240A 880W TO264 Original PDF

    IXXK110N65B4H1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: IXXK110N65B4H1 IXXX110N65B4H1 XPTTM 650V GenX4TM w/ Sonic Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 650V 110A 2.1V 85ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original
    PDF IXXK110N65B4H1 IXXX110N65B4H1 IC110 10-30kHz O-264 IF110 110N65B4H1 02-04-13-B

    E8 55A DIODE

    Abstract: No abstract text available
    Text: Advance Technical Information IXXK110N65B4H1 IXXX110N65B4H1 XPTTM 650V GenX4TM w/ Sonic Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original
    PDF 10-30kHz IXXK110N65B4H1 IXXX110N65B4H1 IC110 O-264 IF110 110N65B4H1 E8 55A DIODE