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    IXTY08N100P Search Results

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    IXTY08N100P Price and Stock

    Littelfuse Inc IXTY08N100P

    MOSFET N-CH 1000V 800MA TO252
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    DigiKey IXTY08N100P Tube 350
    • 1 -
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    • 1000 $1.66069
    • 10000 $1.66069
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    Newark IXTY08N100P Bulk 350
    • 1 -
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    • 100 $2.26
    • 1000 $1.81
    • 10000 $1.69
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    Littelfuse Inc IXTY08N100P-TRL

    MOSFET N-CH 1000V 800MA TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTY08N100P-TRL Reel 2,500
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    • 10000 $1.582
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    Newark IXTY08N100P-TRL Reel 2,500
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    • 10000 $1.73
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    IXYS Corporation IXTY08N100P

    MOSFETs 0.8 Amps 1000V 20 Rds
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    Mouser Electronics IXTY08N100P 2,086
    • 1 $3.38
    • 10 $2.84
    • 100 $2.3
    • 1000 $2.04
    • 10000 $1.58
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    Future Electronics IXTY08N100P Tube 24 Weeks 70
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    • 100 $1.85
    • 1000 $1.85
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    TTI IXTY08N100P Tube 350
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    • 1000 $1.67
    • 10000 $1.67
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    TME IXTY08N100P 1
    • 1 $2.71
    • 10 $2.43
    • 100 $1.94
    • 1000 $1.94
    • 10000 $1.94
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    Chip 1 Exchange IXTY08N100P 3,533
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    New Advantage Corporation IXTY08N100P 2,218 1
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    • 1000 $2.34
    • 10000 $2.18
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    IXYS Corporation IXTY08N100P-TRL

    MOSFET Modules IXTY08N100P TRL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTY08N100P-TRL
    • 1 -
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    TTI IXTY08N100P-TRL Reel 2,500
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    • 10000 $1.61
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    IXYS Integrated Circuits Division IXTY08N100P

    MOSFET DIS.800mA 1000V N-CH TO252(DPAK) ENHANCEMEN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTY08N100P 2,718
    • 1 $1.80389
    • 10 $1.80389
    • 100 $1.6399
    • 1000 $1.6399
    • 10000 $1.6399
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    IXTY08N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTY08N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA TO-252 Original PDF

    IXTY08N100P Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET VDSS ID25 IXTA08N100P IXTP08N100P IXTY08N100P = 1000V = 0.8A Ω ≤ 20Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		PDF IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A

    08N10

    Abstract: IXTY08N100P ixtp08n100p
    Text: PolarTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 0.8A ≤ 20Ω Ω TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A 08N10 IXTY08N100P ixtp08n100p

    IXTP08N100P

    Abstract: 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N
    Text: IXTA08N100P IXTP08N100P IXTY08N100P PolarTM Power MOSFET VDSS ID25 = 1000V = 0.8A ≤ 20Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		PDF IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A IXTP08N100P 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N