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    IXTX22N100L Search Results

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    IXTX22N100L Price and Stock

    Littelfuse Inc IXTX22N100L

    MOSFET N-CH 1000V 22A PLUS247-3
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    DigiKey IXTX22N100L Tube 1
    • 1 $39.99
    • 10 $39.99
    • 100 $30.70867
    • 1000 $30.70867
    • 10000 $30.70867
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    Newark IXTX22N100L Bulk 30
    • 1 -
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    • 100 $33.17
    • 1000 $32.19
    • 10000 $32.19
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    IXYS Corporation IXTX22N100L

    MOSFETs LINEAR PWR MOSFET N-CHAN 1000V 22A
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    Mouser Electronics IXTX22N100L
    • 1 $44.44
    • 10 $44.41
    • 100 $37.22
    • 1000 $37.22
    • 10000 $37.22
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    Future Electronics IXTX22N100L Tube 300
    • 1 -
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    • 100 $30.42
    • 1000 $30.11
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    TTI IXTX22N100L Tube 300
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    • 1000 $30.71
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    TME IXTX22N100L 1
    • 1 $51.91
    • 10 $41.3
    • 100 $37.03
    • 1000 $37.03
    • 10000 $37.03
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    IXTX22N100L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTX22N100L IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 22A PLUS247 Original PDF

    IXTX22N100L Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTK22N100L IXTX22N100L RDS on = 1000V = 22A ≤ 600mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTK22N100L IXTX22N100L O-264 22N100L

    IXTX22N100L

    Abstract: IXTK22N100L PLUS247 t22n1 22N100 22N10
    Text: LinearTM Power MOSFET w/ Extended FBSOA IXTK22N100L IXTX22N100L VDSS ID25 RDS on = 1000V = 22A ≤ 600mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTK22N100L IXTX22N100L O-264 PLUS247 22N100L IXTX22N100L IXTK22N100L PLUS247 t22n1 22N100 22N10

    IXTK22N100L

    Abstract: PLUS247 T22N 100A 1000V mosfet 22N10
    Text: LinearTM Power MOSFET w/ Extended FBSOA IXTK22N100L IXTX22N100L VDSS ID25 RDS on = 1000V = 22A ≤ 600mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTK22N100L IXTX22N100L O-264 PLUS247 22N100L IXTK22N100L PLUS247 T22N 100A 1000V mosfet 22N10

    IXTK22N100L

    Abstract: PLUS247
    Text: Advance Technical Information Linear Power MOSFET IXTK22N100L With Extended FBSOA IXTX22N100L VDSS ID25 N-Channel Enhancement Mode RDS on = 1000 = 22 ≤ 0.60 V A Ω TO-264 (IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR


    Original     		PDF IXTK22N100L IXTX22N100L O-264 PLUS247TM 22N100L 4-05-07-A IXTK22N100L PLUS247

    IXAN0068

    Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L
    Text: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability


    Original     		PDF IXAN0068 6710405B2, IXAN0068 IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L