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    IXTP80N10T Search Results

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    IXTP80N10T Price and Stock

    Littelfuse Inc IXTP80N10T

    MOSFET N-CH 100V 80A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP80N10T Tube 8,910 1
    • 1 $2.96
    • 10 $2.96
    • 100 $2.96
    • 1000 $2.96
    • 10000 $2.96
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    IXYS Corporation IXTP80N10T

    MOSFETs 80 Amps 100V 13.0 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP80N10T 545
    • 1 $2.96
    • 10 $2.69
    • 100 $1.54
    • 1000 $1.54
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    Newark IXTP80N10T Bulk 1
    • 1 $3.44
    • 10 $3.2
    • 100 $2.34
    • 1000 $2.08
    • 10000 $2.08
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    Future Electronics IXTP80N10T Tube 27 Weeks 450
    • 1 -
    • 10 -
    • 100 $1.67
    • 1000 $1.59
    • 10000 $1.51
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    TTI IXTP80N10T Tube 300
    • 1 -
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    • 100 -
    • 1000 $1.56
    • 10000 $1.56
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    TME IXTP80N10T 260 1
    • 1 $3
    • 10 $2.48
    • 100 $2.06
    • 1000 $1.77
    • 10000 $1.77
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    New Advantage Corporation IXTP80N10T 613 1
    • 1 -
    • 10 -
    • 100 $3.93
    • 1000 $3.67
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    IXYS Integrated Circuits Division IXTP80N10T

    MOSFET N-CH 100V 80A TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics IXTP80N10T 6,779
    • 1 -
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    • 100 $1.2065
    • 1000 $0.9803
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    IXTP80N10T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP80N10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 80A TO-220 Original PDF

    IXTP80N10T Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TrenchMVTM Power MOSFET VDSS ID25 IXTA80N10T IXTP80N10T RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ 100V 80A 14mΩ Ω TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTA80N10T IXTP80N10T O-263 80N10T 2-11-07-A

    IXTP80N10

    Abstract: IXTP80N10T 80N10T
    Text: Preliminary Technical Information IXTA80N10T IXTP80N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 100 V = 80 A Ω ≤ 14 mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTA80N10T IXTP80N10T O-263 80N10T IXTP80N10 IXTP80N10T 80N10T

    IXTP80N10T

    Abstract: IXTA80N10T IXTP80N10 80N10T IXTP*80N10T 80N10 t80n10t
    Text: IXTA80N10T IXTP80N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ 100V 80A 14mΩ Ω TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTA80N10T IXTP80N10T O-263 80N10T 2-11-07-A IXTP80N10T IXTA80N10T IXTP80N10 IXTP*80N10T 80N10 t80n10t

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T