IXTP170N075 Search Results

IXTP170N075 Price and Stock

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Littelfuse Inc IXTP170N075T2 MOSFET N-CH 75V 170A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP170N075T2	Tube	326		1	1 $4.17 10 $4.17 100 $4.17 1000 $1.80696 10000 $1.80696	Buy Now
Newark	IXTP170N075T2	Bulk			300	1 - 10 - 100 $2.6 1000 $2.09 10000 $1.94	Buy Now
IXYS Corporation IXTP170N075T2 MOSFETs 170 Amps 75V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTP170N075T2		112			1 $4.17 10 $4.14 100 $2.13 1000 $1.8 10000 $1.8	Buy Now
TTI	IXTP170N075T2	Tube			300	1 - 10 - 100 - 1000 $1.82 10000 $1.82	Buy Now
TME	IXTP170N075T2		29		1	1 $3.12 10 $2.48 100 $2.24 1000 $2.24 10000 $2.24	Buy Now
New Advantage Corporation	IXTP170N075T2		185		1	1 - 10 - 100 $4.5 1000 $4.2 10000 $4.2	Buy Now
IXYS Integrated Circuits Division IXTP170N075T2 MOSFET DIS.170A 75V N-CH TO220AB TRENCHT2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXTP170N075T2		185			1 $3.46643 10 $3.46643 100 $3.1513 1000 $3.1513 10000 $3.1513	Buy Now

IXTP170N075 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTP170N075T2		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 170A TO-220		Original	PDF

IXTP170N075 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TrenchT2TM Power MOSFET IXTA170N075T2 IXTP170N075T2 VDSS ID25 = 75V = 170A Ω ≤ 5.4mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTA170N075T2 IXTP170N075T2 O-263 O-220 170N075T2 2-15-08-A
IXTP170N075T2 Abstract: IXTA170N075T2 170N075T2 Text: TrenchT2TM Power MOSFET IXTA170N075T2 IXTP170N075T2 VDSS ID25 = 75V = 170A Ω ≤ 5.4mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTA170N075T2 IXTP170N075T2 O-263 O-220 170N075T2 2-15-08-A IXTP170N075T2 IXTA170N075T2
IXTP170N075T2 Abstract: ixtp170n075 T170N IXTA170N075T2 170N075T2 Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA170N075T2 IXTP170N075T2 VDSS ID25 = 75V = 170A Ω ≤ 5.4mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75	Original	PDF	IXTA170N075T2 IXTP170N075T2 O-263 O-220 170N075T2 IXTP170N075T2 ixtp170n075 T170N IXTA170N075T2
IXTP220N04T2 Abstract: IRF2204 IXTA200N055T2 IXYS Class D Switching Amplifiers IXTA100N04T2 IXTA120N04T2 IXTA220N04T2 IXTA90N055T2 IXTP100N04T2 IXTP120N04T2 Text: IXYS POWER Efficiency through Technology N E W P R O D U C T B RI E F 40V – 75V TrenchT2TM MOSFETs Next Generation Trench Power MOSFETs MAY 2008 OVERVIEW IXYS’ next generation TrenchT2TM Power MOSFETs are designed and optimized to meet the thermal and electrical performance of today’s energy and power management	Original	PDF	O-220 IXTP220N04T2 IRF2204 IXTA200N055T2 IXYS Class D Switching Amplifiers IXTA100N04T2 IXTA120N04T2 IXTA220N04T2 IXTA90N055T2 IXTP100N04T2 IXTP120N04T2
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