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    IXTN17N120L Search Results

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    IXTN17N120L Price and Stock

    IXYS Corporation IXTN17N120L

    MOSFET Modules 17 Amps 1200V
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    Mouser Electronics IXTN17N120L
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    Future Electronics IXTN17N120L Tube 300
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    TME IXTN17N120L 1
    • 1 $71.09
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    Littelfuse Inc IXTN17N120L

    Discmosfet N-Ch Linear Std Sot-227B(Mini/ Tube |Littelfuse IXTN17N120L
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    Newark IXTN17N120L Bulk 300
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    IXTN17N120L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTN17N120L IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 15A SOT-227B Original PDF

    IXTN17N120L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTN17N120L

    Abstract: No abstract text available
    Text: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN17N120L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1200V = 17A Ω ≤ 990mΩ RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		IXTN17N120L OT-227 E153432 17N120L IXTN17N120L PDF

    IXTN17N120L

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/ Extended FBSOA IXTN17N120L VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA = 1200V = 15A Ω < 900mΩ G S S miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V


    Original     		IXTN17N120L E153432 100ms 17N120L 02-18-09-B IXTN17N120L PDF

    Untitled

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTN17N120L D N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA = 1200V = 15A Ω < 900mΩ RDS on G S S miniBLOC E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V


    Original     		IXTN17N120L E153432 100ms 17N120L 02-18-09-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information Linear Power MOSFET IXTN17N120L With Extended FBSOA VDSS ID25 D = 1200 = 17 ≤ 0.99 RDS on N-Channel Enhancement Mode V A Ω G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		IXTN17N120L OT-227 E153432 338B2 PDF

    IXTN17N120L

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTN17N120L Linear Power MOSFET w/Extended FBSOA VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA = 1200V = 15A Ω < 900mΩ G S S miniBLOC, SOT-227 B E153432 S G Symbol Test Conditions Maximum Ratings


    Original     		IXTN17N120L OT-227 E153432 17N120L 02-18-09-B 100ms IXTN17N120L PDF