Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTH6N150 Search Results

    SF Impression Pixel

    IXTH6N150 Price and Stock

    IXYS Corporation IXTH6N150

    MOSFETs HIGH VOLT PWR MOSFET 1500V 6A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTH6N150
    • 1 $13.42
    • 10 $13.42
    • 100 $9.87
    • 1000 $9.47
    • 10000 $9.47
    		Get Quote
    Future Electronics IXTH6N150 Tube 600
    • 1 -
    • 10 -
    • 100 $7.13
    • 1000 $7.02
    • 10000 $7.02
    		Buy Now
    TTI IXTH6N150 Tube 300 30
    • 1 -
    • 10 -
    • 100 $9.81
    • 1000 $9.81
    • 10000 $9.81
    		Buy Now
    TME IXTH6N150 1
    • 1 $11.28
    • 10 $8.95
    • 100 $8.03
    • 1000 $8.03
    • 10000 $8.03
    		Get Quote
    New Advantage Corporation IXTH6N150 425 1
    • 1 -
    • 10 -
    • 100 $17.24
    • 1000 $16.09
    • 10000 $16.09
    		Buy Now
    Vyrian IXTH6N150 168
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Littelfuse Inc IXTH6N150

    Trans MOSFET N-CH 1.5KV 6A 3-Pin(3+Tab) TO-247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical IXTH6N150 1,230 30
    • 1 -
    • 10 -
    • 100 $10.4627
    • 1000 $10.4627
    • 10000 $8.7676
    		Buy Now
    Arrow Electronics IXTH6N150 1,230 61 Weeks 30
    • 1 -
    • 10 -
    • 100 $10.4627
    • 1000 $10.4627
    • 10000 $8.7676
    		Buy Now
    Newark IXTH6N150 Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.08
    • 10000 $7.08
    		Buy Now

    IXTH6N150 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH6N150 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 6A TO-247 Original PDF

    IXTH6N150 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Power MOSFETs VDSS ID25 IXTT6N150 IXTH6N150 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTT6N150 IXTH6N150 O-268 6N150 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR


    Original     		IXTT6N150 IXTH6N150 O-268 O-247 6N150 PDF

    IXTH6N150

    Abstract: 6n150
    Text: Advance Technical Information IXTH6N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 6A 3.5Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH6N150 O-247 6N150 IXTH6N150 6n150 PDF

    IXTT6N150

    Abstract: No abstract text available
    Text: IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTT6N150 IXTH6N150 O-268 O-247 6N150 PDF