IXTH03N400
Abstract: IXTV03N400S PLUS220SMD 03N400
Text: Advance Technical Information IXTH03N400 IXTV03N400S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4000 V VGSS Continuous
|
Original
|
PDF
|
IXTH03N400
IXTV03N400S
300mA
O-247
03N400
IXTH03N400
IXTV03N400S
PLUS220SMD
|
Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage Power MOSFETs VDSS ID25 IXTH03N400 IXTV03N400S RDS on = = ≤ 4000V 300mA Ω 290Ω N-Channel Enhancement Mode Fast Intrinsic Rectifier TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
|
Original
|
PDF
|
IXTH03N400
IXTV03N400S
300mA
O-247
03N400
|
IXTV03N400S
Abstract: IXTH03N400 03N400 03n40
Text: Preliminary Technical Information IXTH03N400 IXTV03N400S High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Fast Intrinsic Rectifier 4000V 300mA Ω 290Ω TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
PDF
|
IXTH03N400
IXTV03N400S
300mA
O-247
PLUS220SMD
O-247)
PLUS220)
150mA
03N400
IXTV03N400S
03n40
|