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    IXTA182N055T7 Price and Stock

    Littelfuse Inc IXTA182N055T7

    MOSFET N-CH 55V 182A TO263-7
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    IXTA182N055T7 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTA182N055T7
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 182A TO-263-7 Original PDF

    IXTA182N055T7 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA182N055T7 RDS on = 55 V = 182 A ≤ 5.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		IXTA182N055T7 O-263 182N055T 1-06-A PDF

    182N055T

    Abstract: T182N 182N055
    Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA182N055T7 VDSS ID25 RDS on = 55 V = 182 A ≤ 5.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		IXTA182N055T7 O-263 182N055T 1-06-A 182N055T T182N 182N055 PDF

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T PDF