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    G60N60

    Abstract: G60N IF110 ISOPLUS247 C9045 IXGR60N60C2C1 g60n60c2
    Text: Preliminary Technical Information HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		PDF IXGR60N60C2C1 IC110 IF110 60N60C2C1 2-17-08-A G60N60 G60N IF110 ISOPLUS247 C9045 IXGR60N60C2C1 g60n60c2

    G60N60

    Abstract: 60N60C2 IF110 ISOPLUS247 g60n60c2c1 IXGR60N60C2C1 siemens sic g60n60c2
    Text: IXGR60N60C2C1 HiperFASTTM IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGR60N60C2C1 IC110 247TM IF110 60N60C2C1 2-17-08-A G60N60 60N60C2 IF110 ISOPLUS247 g60n60c2c1 IXGR60N60C2C1 siemens sic g60n60c2

    Untitled

    Abstract: No abstract text available
    Text: HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGR60N60C2C1 IC110 247TM IF110 60N60C2C1 2-17-08-A