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IXYS Corporation IXGH30N60C3D1 IGBT 600V 60A 220W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH30N60C3D1	Tube	1,381		1	1 $6.96 10 $6.96 100 $4.278 1000 $3.48663 10000 $3.48663	Buy Now
Mouser Electronics	IXGH30N60C3D1		337			1 $6.07 10 $5.88 100 $4.28 1000 $3.49 10000 $3.49	Buy Now
Future Electronics	IXGH30N60C3D1	Tube		40 Weeks	300	1 - 10 - 100 $3.66 1000 $3.52 10000 $3.42	Buy Now
TTI	IXGH30N60C3D1	Tube	150		30	1 - 10 - 100 $4.24 1000 $4.24 10000 $4.24	Buy Now
Littelfuse Inc IXGH30N60C3D1 Trans IGBT Chip N-CH 600V 60A 220W 3-Pin(3+Tab) TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXGH30N60C3D1		300		11	1 - 10 - 100 $6.8976 1000 $6.6884 10000 $6.6884	Buy Now
	IXGH30N60C3D1		11		3	1 - 10 $2.835 100 $2.835 1000 $2.835 10000 $2.835	Buy Now
Arrow Electronics	IXGH30N60C3D1		11		1	1 $2.835 10 $2.835 100 $2.835 1000 $2.835 10000 $2.835	Buy Now
Newark	IXGH30N60C3D1	Bulk	158		1	1 $6.57 10 $6.57 100 $5.24 1000 $4.14 10000 $3.49	Buy Now
Quest Components	IXGH30N60C3D1		240			1 $14.487 10 $14.487 100 $8.9337 1000 $7.9679 10000 $7.9679	Buy Now

IXGH30N60C3D1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGH30N60C3D1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 220W TO247		Original	PDF

IXGH30N60C3D1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ixgh30n60c3d1 Abstract: 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3 Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBTs w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 IF110 O-247) O-268 O-247 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3
IXGH30N60C3D1 Abstract: 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1 Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ	Original	PDF	IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 ID110 IXGH30N60C3D1 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1
Untitled Abstract: No abstract text available Text: GenX3TM 600V IGBTs w/ Diode IXGH30N60C3D1 IXGT30N60C3D1 VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 IF110
Inverter Welder Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM	Original	PDF	PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter