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IXYS Corporation IXGH20N60 IGBT 600V 40A 150W TO247AD
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DigiKey	IXGH20N60	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGH20N60B IGBT 600V 40A 150W TO247AD
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IXYS Corporation IXGH20N160 IGBT 600V 40A TO247AD
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IXYS Corporation IXGH20N60A IGBT 600V 40A 150W TO247AD
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DigiKey	IXGH20N60A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGH20N120 IGBT 1200V 40A 150W TO247
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DigiKey	IXGH20N120	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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IXGH20 Datasheets (30)

Part	Manufacturer	Description	Datasheet Type	PDF
IXGH20N100	IXYS	1000V IGBT	Original	PDF
IXGH20N100	IXYS	Power MOSIGBTs	Scan	PDF
IXGH20N100A	IXYS	Power MOSIGBTs	Scan	PDF
IXGH 20N120	IXYS	IGBT	Original	PDF
IXGH20N120	IXYS	IGBT Discretes: Low Saturation Voltage Types Single IGBT	Original	PDF
IXGH20N120A3	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 40A 180W TO247	Original	PDF
IXGH 20N120B	IXYS	High Voltage IGBT	Original	PDF
IXGH20N120B	IXYS	IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT	Original	PDF
IXGH 20N120BD1	IXYS	High Voltage IGBT with Diode	Original	PDF
IXGH20N120BD1	IXYS	IGBT Discretes	Original	PDF
IXGH20N140C3H1	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1400V 42A 250W TO247	Original	PDF
IXGH20N30	IXYS	Hiperfast IGBT	Original	PDF
IXGH20N50	IXYS	Power MOSIGBTs	Scan	PDF
IXGH20N50A	IXYS	Power MOSIGBTs	Scan	PDF

IXGH 20 N60	IXYS	TRANS IGBT CHIP N-CH 600V 40A 3TO-247 AD	Original	PDF
IXGH20N60	IXYS	Low Vce(sat) IGBT High Speed IGBT	Original	PDF
IXGH20N60	IXYS	Power MOSIGBTs	Scan	PDF
IXGH 20 N60A	IXYS	TRANS IGBT CHIP N-CH 600V 40A 3TO-247 AD	Original	PDF
IXGH20N60A	IXYS	Low VCE(sat) IGBT High speed IGBT	Original	PDF
IXGH20N60A	IXYS	Power MOSIGBTs	Scan	PDF

IXGH20 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IC110 IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 O-263 O-220AB 20N120A3
20N120A3 Abstract: IXGH24N120C3 20N120 G20N120 Text: Preliminary Technical Information VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGH20N120A3 IXGP20N120A3 GenX3TM 1200V IGBT Ultra-low Vsat PT IGBTs for up to 3 kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C	Original	PDF	IC110 IXGA20N120A3 IXGH20N120A3 IXGP20N120A3 O-263 O-220 20N120A3 IXGH24N120C3 20N120 G20N120
G20N120 Abstract: IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Text: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IC110 IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 O-263 O-220AB 20N120A3 G20N120 IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
IXGH20N60BU1 Abstract: TO-247 AD Text: IXGH20N60BU1 HiPerFASTTM IGBT with Diode Combi Pack VCES IC 25 VCE(sat)typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM	Original	PDF	IXGH20N60BU1 O-247 IXGH20N60BU1 TO-247 AD
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH20N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 40 A = 1.45 V = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient	Original	PDF	IXGH20N30 O-247
Untitled Abstract: No abstract text available Text: Advance Technical Information GenX3TM 1000V IGBTs VCES = 1000V IC90 = 20A VCE sat ≤ 2.3V IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C	Original	PDF	IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 O-263 O-220 20N100A3 6-11-A
robot control Abstract: IXGH20N30 Text: HiPerFASTTM IGBT IXGH20N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 40 A = 1.45 V = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient	Original	PDF	IXGH20N30 O-247 robot control IXGH20N30
20N100A Abstract: IXGH20N100A IXGH20N100A3 IXGP20N100A3 Text: Advance Technical Information GenX3TM 1000V IGBTs VCES = 1000V IC90 = 20A VCE sat ≤ 2.3V IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C	Original	PDF	IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 O-263 O-220 O-247 20N100A3 6-11-A 20N100A IXGH20N100A IXGH20N100A3
IXGH20N140C3H1 Abstract: IXGT20N140C3H1 IC100 GenX3TM Text: Advance Technical Information GenX3TM 1400V IGBTs w/ Diode IXGH20N140C3H1 IXGT20N140C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE sat ≤ tfi(typ) = 1400V 20A 5.0V 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR	Original	PDF	IXGH20N140C3H1 IXGT20N140C3H1 IC100 O-247 338B2 IXGH20N140C3H1 IXGT20N140C3H1 IC100 GenX3TM
Untitled Abstract: No abstract text available Text: Advance Technical Information GenX3TM 1400V IGBTs w/ Diode IXGH20N140C3H1 IXGT20N140C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE sat ≤ tfi(typ) = 1400V 20A 5.0V 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR	Original	PDF	IXGH20N140C3H1 IXGT20N140C3H1 IC100 O-247 338B2
20N50A Abstract: 20n50 IXGH20N50 f sss 20n60 sss 20n60 Text: 4686226 ' I X Y S CORP 03 DE I •-§tiñ b SEb □□□□5E4 T~ 3 T — t £ T 1~~ £} IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VOLTS M AXIM UM RATINGS Sym. IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 Unit Drain-Source Voltage 1) Vdss 500 600 Vdc	OCR Scan	PDF	IXGH20N50, IXGM20N50, IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 20N50, 20N50A, 20N50A. 20N50A 20n50 f sss 20n60 sss 20n60
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET vCES IXGH20N30 IXGH20N30S HiPerFAST IGBT ^C25 VCE sat typ t < Symbol Test Conditions VCES ^ VCGR vGES VœM > Maximum Ratings = 25°C to 150°C 300 V Tj = 25°C to 150°C; RGE = 1 MO 300 V Continuous ±20 V Transient ±30 V Tc = 25° C	OCR Scan	PDF	IXGH20N30 IXGH20N30S TQ-247 20N30S) O-247
IXGH20N50 Abstract: ixgh20n50u1 rectifier d 355 n 2000 ic 3404A Text: I X Y S CORP 1ÖE D • ODOObTS 4 ■ T - 3 V 13 □IXYS A D V A N C E T E C H N IC A L D A TA S H E E T Data Sheet No. 3404A _ MOS1GBT with Anti-Parallel Rectifier March 1989 PART NUMBER IXGH20N50U1 F E A T U R E S :_	OCR Scan	PDF	IXGH20N50U1 O-247 384928IX IXGH20N50 ixgh20n50u1 rectifier d 355 n 2000 ic 3404A
IXGH20N50 Abstract: IXGH20N50U1 ic 3404A N-150 100V Text: I X Y S CORP 1ÛE ß 4bôb22b OOOOLTS 4 ^ - 1 3 □IXYS ADVANCE TECHNICAL DATA S H E E T Data Sheet No. 3404A March 1989 PART NUMBER MOSIGBT with Anti-Parallel Rectifier IXGH20N50U1 • High Voltage MOSIGBT and Anti-Parallel Rectifier in One Package	OCR Scan	PDF	4bfib22b 384928IXYS IXGH20N50 IXGH20N50U1 ic 3404A N-150 100V

qe R 521 smd Abstract: No abstract text available Text: P re lim in a ry data <> IXGH20N60B IXGH20N60BS HiPerFAST IGBT Symbol Test Conditions V CES Tj = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 Mi2 vC0R vGES •« Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms U ■c. SSOA RBSOA p c 600 600 VGE= 15 V, TVJ = 125°C, RG= 22 O	OCR Scan	PDF	IXGH20N60B IXGH20N60BS O-247SMD* O-247 qe R 521 smd
2355ZankerRd Abstract: No abstract text available Text: IflE D I X Y S CORP 4b ö b 2 2 b OOOOb'n 1 ~T-2P\ -<2> □IXYS ADVANCE TECHNICAL DATA SHEET* March 1989 PART NUMBER Data Sheet No. 3407A MOSIGBT with Anti-Parallel Rectifier IXGH20N100U1 FEATURES: • High Voltage M OSIGBT and Anti-Parallel Rectifier in One Package	OCR Scan	PDF	IXGH20N100U1 O-247 384928IX 2355ZankerRd
Untitled Abstract: No abstract text available Text: ÏXYS HiPerFAST IGBT IXGH20N30 VCES C25 VCE sat typ t fi(typ) Symbol Test Conditions V T j = 2 5 °C to 150°C Maximum Ratings 300 V 300 V Continuous +20 V Transient 130 V T,J = 2 5 °C to 150J C; FLO 1 M fi Tc -2 5 C 40 A ^C9G T c = 90° C 20 A ^CM T c = 25° C, 1 ms	OCR Scan	PDF	IXGH20N30 O-247
20n50 Abstract: 20N50A IXGH20N50 c 20n50 Text: ' 4686226 I X Y S CORP 03 D E I 4hflbaEti ODDDSSM T • "” T~ 3 T —t £ o IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VO LTS M A X IM U M RA TIN G S Parameter IXGH20N50 IXGM20N50 Sym. Drain-Gate Voltage Rgs 1-OMii) (1) = 600 Vd g r 600 Vdc Vg s	OCR Scan	PDF	IXGH20N50, IXGM20N50, IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 20N50, 20N50A, 20N50A. 20n50 20N50A c 20n50
20n80 Abstract: 20N90 20N80A 20N100 Text: 4686226 I X Y S CORP ¡J3 ß T \| MhfibSEk O O D G E S l 3 T~ 37-13 IXGH20N80, 90, 100 IXGM20N80, 90, 100 * 2 0 A M PS, 8 0 0 -1 0 0 0 VOLTS MAXIMUM RATINGS Unit Drain-Source Voltage 1 Vd s s 800 900 1000 Vdc Drain-Gate Voltage (Rg s = 10M Ü) (1) Vd g r	OCR Scan	PDF	IXGH20N80, IXGM20N80, IXGH20N80 IXGM20N80 IXGH20N90 IXGH20N100 IXGM20N90 IXGM20N100 20n80 20N90 20N80A 20N100
B81 diode smd Abstract: b81 004 IXGH20N60BU1 U 244 Text: HiPerFAST IGBT with Diode IXGH20N60BU1 IXGH20N60BU1S v CES ^C25 v CE sat typ *« = = = = 600 40 1.7 100 V A V ns P relim inary data Sym bol Test C onditions v CES v CGR T, = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 M£2 600 V Maximum Ratings	OCR Scan	PDF	IXGH20N60BU1 IXGH20N60BU1S O-247 B2-35 B81 diode smd b81 004 U 244
10A600V Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU	OCR Scan	PDF	HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
qe R 521 smd Abstract: smd mk ixgh20n60b Text: □ IXYS P re lim in a ry data HIPerFAST IGBT Symbol Test Conditions V v CGR T j = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 v v GEM Continuous Transient ^C25 ^C90 ' cm SSOA RBSOA Pc IXGH20N60B IXGH20N60BS « Maximum Ratings 600 600 V V ±20 ±30	OCR Scan	PDF	IXGH20N60B IXGH20N60BS O-247 qe R 521 smd smd mk
IXGH20N60B Abstract: No abstract text available Text: HiPerFAST IGBT IXGH20N60B IXGH20N60BS ÇC VCES ^C25 v CE sat typ tfi = = = = 600 V 40 A 1.7 V 100 ns Preliminary data Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M fi 600 V v' GES Continuous ±20 V v GEM Transient	OCR Scan	PDF	IXGH20N60B IXGH20N60BS O-247
K25 1-GATE Abstract: 3407A IXGH20N100U1 UPS DL-P ICM72 Text: I X Y S Mbñbaab OOODbn 1 IñE D CORP □IXYS AD V A N CE TECH N ICAL DATA SHEET March 1989 PART NUMBER Data Sheet No. 3407A MOSIGBT with Anti-Parallel Rectifier IXGH20N100U1 F EAT U RES: • High Voltage M O SIG B T and Anti-Parallel Rectifier in One Package	OCR Scan	PDF	Cto150Â K25 1-GATE 3407A IXGH20N100U1 UPS DL-P ICM72

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IXYS Corporation IXGH20N60

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IXYS Corporation IXGH20N160

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IXYS Corporation IXGH20N120

IXGH20 Datasheets (30)

IXGH20 Datasheets Context Search

Untitled

20N120A3

G20N120

IXGH20N60BU1

Untitled

Untitled

robot control

20N100A

IXGH20N140C3H1

Untitled

20N50A

Untitled

IXGH20N50

IXGH20N50

qe R 521 smd

2355ZankerRd

Untitled

20n50

20n80

B81 diode smd

10A600V

qe R 521 smd

IXGH20N60B

K25 1-GATE